Fairchild/ON Semiconductor FDD8782

Name: FDD8782
Brand: Fairchild/ON Semiconductor
SKU: 2481694-FDD8782
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDD8782

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2481694-FDD8782

Description:: MOSFET N-CH 25V 35A DPAK

ECAD Model:

Datasheet:: FDD8782/FDU8782

Specifications

Fairchild/ON Semiconductor FDD8782 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDD8782.

Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Weight
260.37mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
AVALANCHE RATED
Subcategory
FET General Purpose Power
Voltage - Rated DC
25V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Current Rating
35A
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
50W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
50W
Case Connection
DRAIN
Turn On Delay Time
7 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
11m Ω @ 35A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1220pF @ 13V
Current - Continuous Drain (Id) @ 25°C
35A Tc
Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V
Rise Time
9ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
14 ns
Turn-Off Delay Time
22 ns
Continuous Drain Current (ID)
35A
JEDEC-95 Code
TO-252AA
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
25V
Avalanche Energy Rating (Eas)
70 mJ
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDD8782 Description
FDD8782 is a type of N-channel PowerTrench? MOSFET provided by ON Semiconductor to improve the overall efficiency of DC/DC converters through either synchronous or conventional switching PWM controllers. It can offer a low gate charge and RDS (on) while maintaining a fast switching speed.

FDD8782 Features
Low gate charge
Low gate resistance
Low RDS (on)
Fast switching speed
Available in the TO-252/TO-252AA package

FDD8782 Applications
VRM for intermediate bus architecture
Vcore DC-DC for desktop computers and servers

FDD8782 More Descriptions

PowerTrench® MOSFET, N-Channel, 25V, 35A, 11mΩ
N-Channel 25 V 35 A 11 mOhm PowerTrench® Mosfet - TO-252-3
Power Field-Effect Transistor, 35A I(D), 25V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.

Product Comparison

The three parts on the right have similar specifications to FDD8782.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Terminal Form

Current Rating

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Avalanche Energy Rating (Eas)

Radiation Hardening

RoHS Status

Lead Free

Published

Resistance

Threshold Voltage

Drain Current-Max (Abs) (ID)

Pulsed Drain Current-Max (IDM)

Height

Length

Width

REACH SVHC

Drain-source On Resistance-Max

Nominal Vgs

View Compare
FDD8782

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

10 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

260.37mg

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

e3

yes

Active

1 (Unlimited)

2

EAR99

Tin (Sn)

AVALANCHE RATED

FET General Purpose Power

25V

MOSFET (Metal Oxide)

GULL WING

35A

R-PSSO-G2

1

50W Tc

Single

ENHANCEMENT MODE

50W

DRAIN

7 ns

N-Channel

SWITCHING

11m Ω @ 35A, 10V

2.5V @ 250μA

1220pF @ 13V

35A Tc

25nC @ 10V

9ns

4.5V 10V

±20V

14 ns

22 ns

35A

TO-252AA

20V

25V

70 mJ

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-
FDD8780

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

10 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

260.37mg

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

e3

yes

Active

1 (Unlimited)

2

EAR99

Tin (Sn)

AVALANCHE RATED

FET General Purpose Power

25V

MOSFET (Metal Oxide)

GULL WING

35A

R-PSSO-G2

1

50W Tc

Single

ENHANCEMENT MODE

50W

DRAIN

7 ns

N-Channel

SWITCHING

8.5m Ω @ 35A, 10V

2.5V @ 250μA

1440pF @ 13V

35A Tc

29nC @ 10V

9ns

4.5V 10V

±20V

24 ns

43 ns

35A

TO-252AA

20V

25V

-

No

ROHS3 Compliant

Lead Free

2006

8.5MOhm

1.8V

60A

224A

2.39mm

6.73mm

6.22mm

No SVHC

-

-

FDD8782 vs FDD8780
FDD8876

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 week ago)

10 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

260.37mg

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

e3

yes

Active

1 (Unlimited)

2

EAR99

Tin (Sn)

-

FET General Purpose Power

30V

MOSFET (Metal Oxide)

GULL WING

73A

R-PSSO-G2

1

70W Tc

Single

ENHANCEMENT MODE

70W

DRAIN

8 ns

N-Channel

SWITCHING

8.2m Ω @ 35A, 10V

2.5V @ 250μA

1700pF @ 15V

15A Ta 73A Tc

47nC @ 10V

91ns

4.5V 10V

±20V

37 ns

44 ns

73A

TO-252AA

20V

30V

95 mJ

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

FDD8782 vs FDD8876
FDD86102LZ

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

8 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

260.37mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

e3

yes

Active

1 (Unlimited)

2

EAR99

Tin (Sn)

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

GULL WING

-

R-PSSO-G2

1

3.1W Ta 54W Tc

Single

ENHANCEMENT MODE

54W

DRAIN

6.6 ns

N-Channel

SWITCHING

22.5m Ω @ 8A, 10V

3V @ 250μA

1540pF @ 50V

8A Ta 35A Tc

26nC @ 10V

2.3ns

4.5V 10V

±20V

2.3 ns

20 ns

8A

-

20V

100V

84 mJ

No

ROHS3 Compliant

-

2006

-

1.5V

8A

40A

2.39mm

6.73mm

6.22mm

No SVHC

0.0225Ohm

1.5 V

FDD8782 vs FDD86102LZ