Fairchild/ON Semiconductor FDD8445
- Part Number:
- FDD8445
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2478816-FDD8445
- Description:
- MOSFET N-CH 40V 70A DPAK
- Datasheet:
- FDD8445
Fairchild/ON Semiconductor FDD8445 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDD8445.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2001
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance8.7MOhm
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Voltage40V
- Power Dissipation-Max79W Tc
- Element ConfigurationSingle
- Current50A
- Operating ModeENHANCEMENT MODE
- Power Dissipation79W
- Case ConnectionDRAIN
- Turn On Delay Time10 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs8.7m Ω @ 50A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4050pF @ 25V
- Current - Continuous Drain (Id) @ 25°C70A Tc
- Gate Charge (Qg) (Max) @ Vgs59nC @ 10V
- Rise Time82ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)9.6 ns
- Turn-Off Delay Time26 ns
- Reverse Recovery Time39 ns
- Continuous Drain Current (ID)70A
- Threshold Voltage2.8V
- JEDEC-95 CodeTO-252AA
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage40V
- Dual Supply Voltage40V
- Nominal Vgs2.8 V
- Height2.39mm
- Length6.73mm
- Width6.22mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDD8445 Description
The N-channel MOSFET FDD8445 is manufactured using on Semiconductor's advanced PowerTritch process, which is tailor-made to minimize on-resistance while maintaining excellent switching performance.
FDD8445 Features RDS(ON)=6.7mΩ(Typ),VGs=10V,ID=50A ■Qg(10)=45nC(Typ),VGs=10V .Low Miller Charge ■Low Qrr Body Diode =UIS Capability(Single Pulse/ Repetitive Pulse) RoHS Compliant FDD8445 Applications
Power train Management Electronic Transmission IDistributed Power Architecture and VRMs Primary Switch for 12V Systems
FDD8445 Features RDS(ON)=6.7mΩ(Typ),VGs=10V,ID=50A ■Qg(10)=45nC(Typ),VGs=10V .Low Miller Charge ■Low Qrr Body Diode =UIS Capability(Single Pulse/ Repetitive Pulse) RoHS Compliant FDD8445 Applications
Power train Management Electronic Transmission IDistributed Power Architecture and VRMs Primary Switch for 12V Systems
FDD8445 More Descriptions
PowerTrench® MOSFET, N-Channel, 40V, 50A, 8.7mΩ
N-Channel 40 V 50 A 8.7 mOhm Surface Mount PowerTrench Mosfet TO-252-3
Power Field-Effect Transistor, 70A I(D), 40V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:15.2A; Drain Source Voltage Vds:40V; On Resistance Rds(on):6.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:79W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-252; Application Code:GP; Current Id Max:70A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.9°C/W; Package / Case:DPAK; Power Dissipation Pd:79W; Power Dissipation Pd:79W; Pulse Current Idm:85A; Reverse Recovery Time trr Typ:39ns; SMD Marking:FDD8445; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
N-Channel 40 V 50 A 8.7 mOhm Surface Mount PowerTrench Mosfet TO-252-3
Power Field-Effect Transistor, 70A I(D), 40V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:15.2A; Drain Source Voltage Vds:40V; On Resistance Rds(on):6.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:79W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-252; Application Code:GP; Current Id Max:70A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.9°C/W; Package / Case:DPAK; Power Dissipation Pd:79W; Power Dissipation Pd:79W; Pulse Current Idm:85A; Reverse Recovery Time trr Typ:39ns; SMD Marking:FDD8445; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
The three parts on the right have similar specifications to FDD8445.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceSubcategoryTechnologyTerminal FormJESD-30 CodeNumber of ElementsVoltagePower Dissipation-MaxElement ConfigurationCurrentOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeReverse Recovery TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeWeightVoltage - Rated DCCurrent RatingSurface MountTerminal FinishAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusConfigurationDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
-
FDD8445ACTIVE (Last Updated: 1 day ago)8 WeeksTinSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-55°C~175°C TJTape & Reel (TR)PowerTrench®2001e3yesActive1 (Unlimited)2SMD/SMTEAR998.7MOhmFET General Purpose PowerMOSFET (Metal Oxide)GULL WINGR-PSSO-G2140V79W TcSingle50AENHANCEMENT MODE79WDRAIN10 nsN-ChannelSWITCHING8.7m Ω @ 50A, 10V4V @ 250μA4050pF @ 25V70A Tc59nC @ 10V82ns10V±20V9.6 ns26 ns39 ns70A2.8VTO-252AA20V40V40V2.8 V2.39mm6.73mm6.22mmNo SVHCNoROHS3 CompliantLead Free--------------------
-
ACTIVE (Last Updated: 1 day ago)8 WeeksTinSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2016e3yesActive1 (Unlimited)2-EAR998.5MOhmFET General Purpose PowerMOSFET (Metal Oxide)GULL WINGR-PSSO-G21-3.1W Ta 44W TcSingle-ENHANCEMENT MODE3.8WDRAIN12 nsN-ChannelSWITCHING8.5m Ω @ 14A, 10V3V @ 250μA1970pF @ 20V15.2A Ta 50A Tc52nC @ 10V12ns4.5V 10V±20V9 ns38 ns-15.2A1.9V-20V40V-1.9 V2.39mm6.73mm6.22mmNo SVHCNoROHS3 CompliantLead Free260.37mg40V54A----------------
-
----Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-SILICON-55°C~175°C TJTape & Reel (TR)PowerTrench®-e3yesObsolete1 (Unlimited)2----MOSFET (Metal Oxide)GULL WINGR-PSSO-G21-3.7W Ta 18W Tc--ENHANCEMENT MODE-DRAIN-N-Channel-40m Ω @ 2.7A, 10V2.5V @ 250μA425pF @ 13V6.5A Ta 2.7A Tc9nC @ 10V-4.5V 10V±20V---------------ROHS3 Compliant----YESMATTE TINAVALANCHE RATEDSINGLE260unknownNOT SPECIFIED3COMMERCIALSINGLE WITH BUILT-IN DIODE25V6.5A63Ohm14A25V19 mJ
-
ACTIVE (Last Updated: 1 day ago)8 Weeks-Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2006e3yesActive1 (Unlimited)2-EAR9913MOhmFET General Purpose PowerMOSFET (Metal Oxide)GULL WINGR-PSSO-G21-3.1W Ta 43W TcSingle-ENHANCEMENT MODE3.1WDRAIN8 nsN-ChannelSWITCHING9m Ω @ 13A, 10V3V @ 250μA1640pF @ 20V14A Ta 42A Tc28nC @ 10V3ns4.5V 10V±20V2 ns19 ns-14A2V-20V40V--2.39mm6.73mm6.22mmNo SVHCNoROHS3 CompliantLead Free260.37mg---Tin (Sn)---------52A----
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
17 October 2023
A Review of TDA2009A Dual Audio Power Amplifier
Ⅰ. What is TDA2009A?Ⅱ. Symbol, footprint and pin configuration of TDA2009AⅢ. Technical parameters of TDA2009AⅣ. What are the features of TDA2009A?Ⅴ. How does the overheating protection circuit of... -
18 October 2023
What Is CD4017BE CMOS Counter And How It Works?
Ⅰ. Overview of CD4017BE counterⅡ. Symbol, footprint and pin configuration of CD4017BEⅢ. Technical parameters of CD4017BEⅣ. What are the features of CD4017BE?Ⅴ. How does CD4017BE work?Ⅵ. What are... -
18 October 2023
Get to Know the MOC3063 Triac Driver
Ⅰ. What is an optocoupler?Ⅱ. Overview of MOC3063 optocouplerⅢ. Symbol, footprint and pin configuration of MOC3063Ⅳ. Technical parameters of MOC3063Ⅴ. What are the features of MOC3063?Ⅵ. Working principle... -
19 October 2023
TIP122 Darlington Transistor: Symbol, Features, Applications and More
Ⅰ. What is Darlington tube?Ⅱ. Overview of TIP122 transistorⅢ. Symbol and footprint of TIP122 transistorⅣ. Technical parameters of TIP122 transistorⅤ. What are the features of TIP122 transistor?Ⅵ. Pin...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.