FDD8445

Fairchild/ON Semiconductor FDD8445

Part Number:
FDD8445
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2478816-FDD8445
Description:
MOSFET N-CH 40V 70A DPAK
ECAD Model:
Datasheet:
FDD8445

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Specifications
Fairchild/ON Semiconductor FDD8445 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDD8445.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2001
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    8.7MOhm
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Voltage
    40V
  • Power Dissipation-Max
    79W Tc
  • Element Configuration
    Single
  • Current
    50A
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    79W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    10 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    8.7m Ω @ 50A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    4050pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    70A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    59nC @ 10V
  • Rise Time
    82ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    9.6 ns
  • Turn-Off Delay Time
    26 ns
  • Reverse Recovery Time
    39 ns
  • Continuous Drain Current (ID)
    70A
  • Threshold Voltage
    2.8V
  • JEDEC-95 Code
    TO-252AA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    40V
  • Dual Supply Voltage
    40V
  • Nominal Vgs
    2.8 V
  • Height
    2.39mm
  • Length
    6.73mm
  • Width
    6.22mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDD8445 Description   The N-channel MOSFET FDD8445 is manufactured using on Semiconductor's advanced PowerTritch process, which is tailor-made to minimize on-resistance while maintaining excellent switching performance.  
 FDD8445 Features RDS(ON)=6.7mΩ(Typ),VGs=10V,ID=50A ■Qg(10)=45nC(Typ),VGs=10V .Low Miller Charge ■Low Qrr Body Diode =UIS Capability(Single Pulse/ Repetitive Pulse) RoHS Compliant   FDD8445 Applications
Power train Management Electronic Transmission IDistributed Power Architecture and VRMs Primary Switch for 12V Systems  
FDD8445 More Descriptions
PowerTrench® MOSFET, N-Channel, 40V, 50A, 8.7mΩ
N-Channel 40 V 50 A 8.7 mOhm Surface Mount PowerTrench Mosfet TO-252-3
Power Field-Effect Transistor, 70A I(D), 40V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:15.2A; Drain Source Voltage Vds:40V; On Resistance Rds(on):6.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:79W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-252; Application Code:GP; Current Id Max:70A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.9°C/W; Package / Case:DPAK; Power Dissipation Pd:79W; Power Dissipation Pd:79W; Pulse Current Idm:85A; Reverse Recovery Time trr Typ:39ns; SMD Marking:FDD8445; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
Product Comparison
The three parts on the right have similar specifications to FDD8445.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Subcategory
    Technology
    Terminal Form
    JESD-30 Code
    Number of Elements
    Voltage
    Power Dissipation-Max
    Element Configuration
    Current
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Reverse Recovery Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Weight
    Voltage - Rated DC
    Current Rating
    Surface Mount
    Terminal Finish
    Additional Feature
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Configuration
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    View Compare
  • FDD8445
    FDD8445
    ACTIVE (Last Updated: 1 day ago)
    8 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2001
    e3
    yes
    Active
    1 (Unlimited)
    2
    SMD/SMT
    EAR99
    8.7MOhm
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    R-PSSO-G2
    1
    40V
    79W Tc
    Single
    50A
    ENHANCEMENT MODE
    79W
    DRAIN
    10 ns
    N-Channel
    SWITCHING
    8.7m Ω @ 50A, 10V
    4V @ 250μA
    4050pF @ 25V
    70A Tc
    59nC @ 10V
    82ns
    10V
    ±20V
    9.6 ns
    26 ns
    39 ns
    70A
    2.8V
    TO-252AA
    20V
    40V
    40V
    2.8 V
    2.39mm
    6.73mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDD8447L
    ACTIVE (Last Updated: 1 day ago)
    8 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2016
    e3
    yes
    Active
    1 (Unlimited)
    2
    -
    EAR99
    8.5MOhm
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    R-PSSO-G2
    1
    -
    3.1W Ta 44W Tc
    Single
    -
    ENHANCEMENT MODE
    3.8W
    DRAIN
    12 ns
    N-Channel
    SWITCHING
    8.5m Ω @ 14A, 10V
    3V @ 250μA
    1970pF @ 20V
    15.2A Ta 50A Tc
    52nC @ 10V
    12ns
    4.5V 10V
    ±20V
    9 ns
    38 ns
    -
    15.2A
    1.9V
    -
    20V
    40V
    -
    1.9 V
    2.39mm
    6.73mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    260.37mg
    40V
    54A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDD8750
    -
    -
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    GULL WING
    R-PSSO-G2
    1
    -
    3.7W Ta 18W Tc
    -
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    -
    40m Ω @ 2.7A, 10V
    2.5V @ 250μA
    425pF @ 13V
    6.5A Ta 2.7A Tc
    9nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    YES
    MATTE TIN
    AVALANCHE RATED
    SINGLE
    260
    unknown
    NOT SPECIFIED
    3
    COMMERCIAL
    SINGLE WITH BUILT-IN DIODE
    25V
    6.5A
    63Ohm
    14A
    25V
    19 mJ
  • FDD8647L
    ACTIVE (Last Updated: 1 day ago)
    8 Weeks
    -
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2006
    e3
    yes
    Active
    1 (Unlimited)
    2
    -
    EAR99
    13MOhm
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    R-PSSO-G2
    1
    -
    3.1W Ta 43W Tc
    Single
    -
    ENHANCEMENT MODE
    3.1W
    DRAIN
    8 ns
    N-Channel
    SWITCHING
    9m Ω @ 13A, 10V
    3V @ 250μA
    1640pF @ 20V
    14A Ta 42A Tc
    28nC @ 10V
    3ns
    4.5V 10V
    ±20V
    2 ns
    19 ns
    -
    14A
    2V
    -
    20V
    40V
    -
    -
    2.39mm
    6.73mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    260.37mg
    -
    -
    -
    Tin (Sn)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    52A
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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