Fairchild/ON Semiconductor FDD3672

Name: FDD3672
Brand: Fairchild/ON Semiconductor
SKU: 2478702-FDD3672
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDD3672

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2478702-FDD3672

Description:: MOSFET N-CH 100V 44A D-PAK

ECAD Model:

Datasheet:: FDD3672

Specifications

Fairchild/ON Semiconductor FDD3672 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDD3672.

Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Weight
260.37mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
UltraFET™
Published
2002
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
28MOhm
Subcategory
FET General Purpose Power
Voltage - Rated DC
100V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Current Rating
44A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
135W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
135W
Case Connection
DRAIN
Turn On Delay Time
11 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
28m Ω @ 44A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1710pF @ 25V
Current - Continuous Drain (Id) @ 25°C
6.5A Ta 44A Tc
Gate Charge (Qg) (Max) @ Vgs
36nC @ 10V
Rise Time
59ns
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Fall Time (Typ)
44 ns
Turn-Off Delay Time
26 ns
Continuous Drain Current (ID)
44A
Threshold Voltage
4V
JEDEC-95 Code
TO-252AA
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
6.5A
Drain to Source Breakdown Voltage
100V
Dual Supply Voltage
100V
Nominal Vgs
4 V
Height
2.39mm
Length
6.73mm
Width
5.59mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDD3672 Overview
The maximum input capacitance of this device is 1710pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 44A.When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.As shown in the table below, the drain current of this device is 6.5A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 26 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 11 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (6V 10V), this device helps reduce its power consumption.

FDD3672 Features
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 26 ns
a threshold voltage of 4V

FDD3672 Applications
There are a lot of ON Semiconductor
FDD3672 applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

FDD3672 More Descriptions

N-Channel MOSFET, UltraFET® Trench, 100V, 44A, 28mΩ
N-Channel 100 V 28 mOhm Surface Mount UltraFET Trench Mosfet TO-252AA
Trans MOSFET N-CH 100V 6.5A 3-Pin(2 Tab) DPAK T/R / MOSFET N-CH 100V 44A DPAK-3
Power Field-Effect Transistor, 6.5A I(D), 100V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N-CH, 100V, 44A, D-PAK, RL; Transistor Polarity: N Channel; Continuous Drain Current Id: 44A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; P

Product Comparison

The three parts on the right have similar specifications to FDD3672.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Subcategory

Voltage - Rated DC

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

RoHS Status

Lead Free

Supplier Device Package

Drain to Source Voltage (Vdss)

Surface Mount

Terminal Finish

Additional Feature

Terminal Position

Pin Count

Configuration

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Radiation Hardening

View Compare
FDD3672

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 week ago)

8 Weeks

Tin

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

260.37mg

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

UltraFET™

2002

e3

yes

Active

1 (Unlimited)

2

SMD/SMT

EAR99

28MOhm

FET General Purpose Power

100V

MOSFET (Metal Oxide)

GULL WING

NOT SPECIFIED

not_compliant

44A

NOT SPECIFIED

R-PSSO-G2

Not Qualified

1

135W Tc

Single

ENHANCEMENT MODE

135W

DRAIN

11 ns

N-Channel

SWITCHING

28m Ω @ 44A, 10V

4V @ 250μA

1710pF @ 25V

6.5A Ta 44A Tc

36nC @ 10V

59ns

6V 10V

±20V

44 ns

26 ns

44A

4V

TO-252AA

20V

6.5A

100V

100V

4 V

2.39mm

6.73mm

5.59mm

No SVHC

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDD3N40TF

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

UniFET™

2007

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

30W Tc

-

-

-

-

-

N-Channel

-

3.4Ohm @ 1A, 10V

5V @ 250μA

225pF @ 25V

2A Tc

6nC @ 10V

-

10V

±30V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

D-Pak

400V

-

-

-

-

-

-

-

-

-

-

-

FDD3672 vs FDD3N40TF
FDD3570

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

-

e3

yes

Obsolete

1 (Unlimited)

2

-

-

-

-

-

MOSFET (Metal Oxide)

GULL WING

260

unknown

-

NOT SPECIFIED

R-PSSO-G2

COMMERCIAL

1

3.4W Ta 69W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

20m Ω @ 10A, 10V

4V @ 250μA

2.8pF @ 40V

10A Ta

76nC @ 10V

-

6V 10V

±20V

-

-

-

-

-

-

43A

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

80V

YES

MATTE TIN

FAST SWITCHING

SINGLE

4

SINGLE WITH BUILT-IN DIODE

0.02Ohm

110A

80V

300 mJ

-

FDD3672 vs FDD3570
FDD3690

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 week ago)

8 Weeks

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

260.37mg

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

-

-

yes

Active

1 (Unlimited)

2

-

EAR99

-

FET General Purpose Power

100V

MOSFET (Metal Oxide)

GULL WING

-

-

22A

-

R-PSSO-G2

-

1

3.8W Ta 60W Tc

Single

ENHANCEMENT MODE

60W

DRAIN

11 ns

N-Channel

SWITCHING

64m Ω @ 5.4A, 10V

4V @ 250μA

1514pF @ 50V

22A Tc

39nC @ 10V

6.5ns

6V 10V

±20V

10 ns

29 ns

22A

-

-

20V

-

100V

-

-

-

-

-

-

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

0.064Ohm

75A

-

-

No

FDD3672 vs FDD3690