Fairchild/ON Semiconductor FDC699P

Name: FDC699P
Brand: Fairchild/ON Semiconductor
SKU: 3071103-FDC699P
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDC699P

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3071103-FDC699P

Description:: MOSFET P-CH 20V 7A SSOT-6

ECAD Model:

Datasheet:: FDC699P

Specifications

Fairchild/ON Semiconductor FDC699P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDC699P.

Mounting Type
Surface Mount
Package / Case
6-SSOT Flat-lead, SuperSOT™-6 FLMP
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
Terminal Finish
NICKEL PALLADIUM GOLD
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Reach Compliance Code
unknown
Pin Count
6
JESD-30 Code
R-PDSO-F6
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2W Ta
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
22m Ω @ 7A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2.64pF @ 10V
Current - Continuous Drain (Id) @ 25°C
7A Ta
Gate Charge (Qg) (Max) @ Vgs
38nC @ 5V
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Vgs (Max)
±12V
Drain Current-Max (Abs) (ID)
7A
Drain-source On Resistance-Max
0.022Ohm
Pulsed Drain Current-Max (IDM)
40A
DS Breakdown Voltage-Min
20V
RoHS Status
ROHS3 Compliant

Description

FDC699P Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2.64pF @ 10V.There is no drain current on this device since the maximum continuous current it can conduct is 7A.There is a peak drain current of 40A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 20V, it should remain above the 20V level.The transistor must receive a 20V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (2.5V 4.5V).

FDC699P Features
based on its rated peak drain current 40A.
a 20V drain to source voltage (Vdss)

FDC699P Applications
There are a lot of Rochester Electronics, LLC
FDC699P applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

FDC699P More Descriptions

P-Channel 2.5V Power Mosfet MOSFET Recommend FDC699P_F077
MOSFET P-CH 20V 7A SUPERSOT6
OEMs, CMs ONLY (NO BROKERS)
Contact for details
MOSFET, P, SMD, FLMP, SSOT-6; Transistor type:PowerTrench; Voltage, Vds typ:-20V; Current, Id cont:7A; Resistance, Rds on:0.022R; Voltage, Vgs Rds on measurement:-4.5V; Voltage, Vgs th typ:-0.9V; Case style:SSOT-6 FLMP; Pins, No. of:6; Power dissipation:2mW; Termination Type:SMD; Transistor polarity:P; Voltage, Vds:-20V; Voltage, Vgs th max:-1.5V

Product Comparison

The three parts on the right have similar specifications to FDC699P.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Reach Compliance Code

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

RoHS Status

Supplier Device Package

Published

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Number of Pins

Weight

JESD-609 Code

Pbfree Code

Termination

ECCN Code

Resistance

Subcategory

Voltage - Rated DC

Terminal Form

Current Rating

Number of Channels

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Max Junction Temperature (Tj)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

Lead Free

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

View Compare
FDC699P

Fairchild/ON Semiconductor

Surface Mount

6-SSOT Flat-lead, SuperSOT™-6 FLMP

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

Obsolete

1 (Unlimited)

6

NICKEL PALLADIUM GOLD

MOSFET (Metal Oxide)

DUAL

unknown

6

R-PDSO-F6

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

2W Ta

ENHANCEMENT MODE

DRAIN

P-Channel

SWITCHING

22m Ω @ 7A, 4.5V

1.5V @ 250μA

2.64pF @ 10V

7A Ta

38nC @ 5V

20V

2.5V 4.5V

±12V

7A

0.022Ohm

40A

20V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDC602P_F095

Fairchild/ON Semiconductor

Surface Mount

SOT-23-6 Thin, TSOT-23-6

-

-

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

1.6W Ta

-

-

P-Channel

-

35mOhm @ 5.5A, 4.5V

1.5V @ 250μA

1456pF @ 10V

5.5A Ta

20nC @ 4.5V

20V

2.5V 4.5V

±12V

-

-

-

-

-

SuperSOT™-6

2008

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FDC699P vs FDC602P_F095
FDC653N

Fairchild/ON Semiconductor

Surface Mount

SOT-23-6 Thin, TSOT-23-6

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

Active

1 (Unlimited)

6

-

MOSFET (Metal Oxide)

DUAL

-

-

-

-

1

-

1.6W Ta

ENHANCEMENT MODE

-

N-Channel

SWITCHING

35m Ω @ 5A, 10V

2V @ 250μA

350pF @ 15V

5A Ta

17nC @ 10V

-

4.5V 10V

±20V

5A

-

-

-

ROHS3 Compliant

-

1997

ACTIVE (Last Updated: 2 days ago)

10 Weeks

Tin

Surface Mount

6

30mg

e3

yes

SMD/SMT

EAR99

35MOhm

FET General Purpose Power

30V

GULL WING

5A

1

Single

1.6W

7.5 ns

12ns

12 ns

13 ns

5A

1.7V

20V

30V

30V

150°C

1.7 V

1.1mm

3mm

1.7mm

No SVHC

No

Lead Free

-

-

FDC699P vs FDC653N
FDC642P

Fairchild/ON Semiconductor

Surface Mount

SOT-23-6 Thin, TSOT-23-6

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

Active

1 (Unlimited)

6

-

MOSFET (Metal Oxide)

DUAL

-

-

-

Not Qualified

1

-

1.6W Ta

ENHANCEMENT MODE

-

P-Channel

SWITCHING

65m Ω @ 4A, 4.5V

1.5V @ 250μA

925pF @ 10V

4A Ta

16nC @ 4.5V

20V

2.5V 4.5V

±8V

4A

-

-

-

ROHS3 Compliant

-

2017

ACTIVE (Last Updated: 2 days ago)

13 Weeks

Tin

Surface Mount

6

36mg

e3

yes

-

EAR99

65mOhm

Other Transistors

-20V

GULL WING

-4A

-

Single

1.6W

6 ns

7ns

7 ns

120 ns

4A

-600mV

8V

-20V

-

-

-

1mm

3mm

1.7mm

No SVHC

-

Lead Free

NOT SPECIFIED

NOT SPECIFIED

FDC699P vs FDC642P

Certification

Related parts for FDC699P

FDC608PZ

Fairchild/ON Semiconductor

MOSFET P-CH 20V 5.8A SSOT-6
FDC602P_F095

Fairchild/ON Semiconductor

MOSFET P-CH 20V 5.5A 6SSOT
FDC653N

Fairchild/ON Semiconductor

MOSFET N-CH 30V 5A SSOT-6
FDC642P

Fairchild/ON Semiconductor

MOSFET P-CH 20V 4A SSOT-6

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FDC699P Specification

Part Number	Manufacturers	Description	Stock	Price
FDC699P DISTI #FDC699P	ON Semiconductor	MOSFET P-CH 20V 7A SSOT-6 RoHS: Compliant	0
FDC699P DISTI #FDC699P	ON Semiconductor	MOSFET P-CH 20V 7A SSOT-6 RoHS: Compliant	0
FDC699P DISTI #FDC699P	ON Semiconductor	MOSFET P-CH 20V 7A SSOT-6 RoHS: Compliant	0
FDC699P_F077 DISTI #FDC699P_F077	ON Semiconductor	MOSFET P-CH 20V 7A 6-SSOT RoHS: Compliant	0
FDC699P DISTI #FDC699P	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 7A I(D), 20V, 0.022 RoHS: Compliant	4762	1 $0.62 25 $0.57 100 $0.55 500 $0.53 1000 $0.5
FDC699P DISTI #FDC699P	ON Semiconductor	MOSFET P-Channel 2.5V RoHS: Compliant	0
FDC699P_F077 DISTI #FDC699P_F077	ON Semiconductor	MOSFET P-Channel 2.5V RoHS: Compliant	0
FDC699P DISTI #FDC699P	Fairchild Semiconductor Corporation	7 A, 20 V, 0.022 ohm, P-CHANNEL, Si, POWER, MOSFET	229
FDC699PDKR-ND DISTI #FDC699PDKR-ND	Fairchild Semiconductor Corporation		89

Fairchild/ON Semiconductor FDC699P

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