FDC658P

Fairchild/ON Semiconductor FDC658P

Part Number:
FDC658P
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2479771-FDC658P
Description:
MOSFET P-CH 30V 4A SSOT-6
ECAD Model:
Datasheet:
FDC658P

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Specifications
Fairchild/ON Semiconductor FDC658P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDC658P.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    10 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-23-6 Thin, TSOT-23-6
  • Number of Pins
    6
  • Weight
    36mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2017
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Resistance
    50mOhm
  • Additional Feature
    LOGIC LEVEL COMPATIBLE
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -30V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Current Rating
    -4A
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    1.6W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.6W
  • Turn On Delay Time
    12 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    50m Ω @ 4A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    750pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    4A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    12nC @ 5V
  • Rise Time
    14ns
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    16 ns
  • Turn-Off Delay Time
    24 ns
  • Continuous Drain Current (ID)
    -4A
  • Threshold Voltage
    -1.7V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    4A
  • Drain to Source Breakdown Voltage
    -30V
  • Max Junction Temperature (Tj)
    150°C
  • Height
    1.1mm
  • Length
    3mm
  • Width
    1.7mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDC658P Description
The FDC658P is a P-Channel Logic Level MOSFET with a maximum power dissipation of 1.6W from ON Semiconductor. This P-Channel Logic Level MOSFET is made with ON Semiconductor's innovative Power Trench process, which has been specifically optimized to reduce on-state resistance while maintaining a low gate charge for improved switching performance. The FDC658P is ideal for load switching and power management, battery charging circuits, and DC/DC conversion in laptop computers.

FDC658P Features
Low gate charge (8nC typical).
High-performance trench technology for extremely low RDS(ON).
SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).

FDC658P Applications
Load switching
Power management
Battery charging circuits
DC/DC conversion
FDC658P More Descriptions
ON SEMICONDUCTOR - FDC658P - MOSFET Transistor, P Channel, 4 A, 30 V, 0.041 ohm, 10 V, 1.7 V
P-Channel PowerTrench® MOSFET, Logic Level, -30V, -4A, 50mΩ
MOSFET P-CH 30V 4A SSOT-6 / Trans MOSFET P-CH 30V 4A 6-Pin TSOT-23 T/R
TVS - Varistors, MOVs Bulk Disc 20mm 1 420J Through Hole 675V -40°C~85°C TA 825V 1 (Unlimited) Var 460VAC/615VDC 7500A 750V Radial Bulk
MOSFET, P, SUPERSOT-6; Transistor Polarity:P Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):50mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.7V; Power Dissipation Pd:1.6W; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:-4A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Package / Case:SuperSOT-6; Power Dissipation Pd:1.6W; Power Dissipation Pd:1.6W; Pulse Current Idm:20A; SMD Marking:FDC658P; Termination Type:SMD; Uni / Bi Directional Polarity:P; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:-1.7V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Max:-3V
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.
Product Comparison
The three parts on the right have similar specifications to FDC658P.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Current Rating
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Max Junction Temperature (Tj)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Termination
    Dual Supply Voltage
    Nominal Vgs
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    View Compare
  • FDC658P
    FDC658P
    ACTIVE (Last Updated: 2 days ago)
    10 Weeks
    Tin
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    6
    36mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2017
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    50mOhm
    LOGIC LEVEL COMPATIBLE
    Other Transistors
    -30V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -4A
    1
    1
    1.6W Ta
    Single
    ENHANCEMENT MODE
    1.6W
    12 ns
    P-Channel
    SWITCHING
    50m Ω @ 4A, 10V
    3V @ 250μA
    750pF @ 15V
    4A Ta
    12nC @ 5V
    14ns
    30V
    10V
    ±20V
    16 ns
    24 ns
    -4A
    -1.7V
    20V
    4A
    -30V
    150°C
    1.1mm
    3mm
    1.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
  • FDC602P_F095
    -
    -
    -
    -
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2008
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    1.6W Ta
    -
    -
    -
    -
    P-Channel
    -
    35mOhm @ 5.5A, 4.5V
    1.5V @ 250μA
    1456pF @ 10V
    5.5A Ta
    20nC @ 4.5V
    -
    20V
    2.5V 4.5V
    ±12V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    SuperSOT™-6
    -
    -
    -
    -
    -
    -
  • FDC653N
    ACTIVE (Last Updated: 2 days ago)
    10 Weeks
    Tin
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    6
    30mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    1997
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    35MOhm
    -
    FET General Purpose Power
    30V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    5A
    1
    1
    1.6W Ta
    Single
    ENHANCEMENT MODE
    1.6W
    7.5 ns
    N-Channel
    SWITCHING
    35m Ω @ 5A, 10V
    2V @ 250μA
    350pF @ 15V
    5A Ta
    17nC @ 10V
    12ns
    -
    4.5V 10V
    ±20V
    12 ns
    13 ns
    5A
    1.7V
    20V
    5A
    30V
    150°C
    1.1mm
    3mm
    1.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    SMD/SMT
    30V
    1.7 V
    -
    -
    -
  • FDC642P
    ACTIVE (Last Updated: 2 days ago)
    13 Weeks
    Tin
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    6
    36mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2017
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    65mOhm
    -
    Other Transistors
    -20V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -4A
    1
    -
    1.6W Ta
    Single
    ENHANCEMENT MODE
    1.6W
    6 ns
    P-Channel
    SWITCHING
    65m Ω @ 4A, 4.5V
    1.5V @ 250μA
    925pF @ 10V
    4A Ta
    16nC @ 4.5V
    7ns
    20V
    2.5V 4.5V
    ±8V
    7 ns
    120 ns
    4A
    -600mV
    8V
    4A
    -20V
    -
    1mm
    3mm
    1.7mm
    No SVHC
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    Not Qualified
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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