Fairchild/ON Semiconductor FDC658P
- Part Number:
- FDC658P
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2479771-FDC658P
- Description:
- MOSFET P-CH 30V 4A SSOT-6
- Datasheet:
- FDC658P
Fairchild/ON Semiconductor FDC658P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDC658P.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time10 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-23-6 Thin, TSOT-23-6
- Number of Pins6
- Weight36mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2017
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Resistance50mOhm
- Additional FeatureLOGIC LEVEL COMPATIBLE
- SubcategoryOther Transistors
- Voltage - Rated DC-30V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating-4A
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max1.6W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.6W
- Turn On Delay Time12 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs50m Ω @ 4A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds750pF @ 15V
- Current - Continuous Drain (Id) @ 25°C4A Ta
- Gate Charge (Qg) (Max) @ Vgs12nC @ 5V
- Rise Time14ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)16 ns
- Turn-Off Delay Time24 ns
- Continuous Drain Current (ID)-4A
- Threshold Voltage-1.7V
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)4A
- Drain to Source Breakdown Voltage-30V
- Max Junction Temperature (Tj)150°C
- Height1.1mm
- Length3mm
- Width1.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDC658P Description
The FDC658P is a P-Channel Logic Level MOSFET with a maximum power dissipation of 1.6W from ON Semiconductor. This P-Channel Logic Level MOSFET is made with ON Semiconductor's innovative Power Trench process, which has been specifically optimized to reduce on-state resistance while maintaining a low gate charge for improved switching performance. The FDC658P is ideal for load switching and power management, battery charging circuits, and DC/DC conversion in laptop computers.
FDC658P Features
Low gate charge (8nC typical).
High-performance trench technology for extremely low RDS(ON).
SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
FDC658P Applications
Load switching
Power management
Battery charging circuits
DC/DC conversion
The FDC658P is a P-Channel Logic Level MOSFET with a maximum power dissipation of 1.6W from ON Semiconductor. This P-Channel Logic Level MOSFET is made with ON Semiconductor's innovative Power Trench process, which has been specifically optimized to reduce on-state resistance while maintaining a low gate charge for improved switching performance. The FDC658P is ideal for load switching and power management, battery charging circuits, and DC/DC conversion in laptop computers.
FDC658P Features
Low gate charge (8nC typical).
High-performance trench technology for extremely low RDS(ON).
SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
FDC658P Applications
Load switching
Power management
Battery charging circuits
DC/DC conversion
FDC658P More Descriptions
ON SEMICONDUCTOR - FDC658P - MOSFET Transistor, P Channel, 4 A, 30 V, 0.041 ohm, 10 V, 1.7 V
P-Channel PowerTrench® MOSFET, Logic Level, -30V, -4A, 50mΩ
MOSFET P-CH 30V 4A SSOT-6 / Trans MOSFET P-CH 30V 4A 6-Pin TSOT-23 T/R
TVS - Varistors, MOVs Bulk Disc 20mm 1 420J Through Hole 675V -40°C~85°C TA 825V 1 (Unlimited) Var 460VAC/615VDC 7500A 750V Radial Bulk
MOSFET, P, SUPERSOT-6; Transistor Polarity:P Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):50mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.7V; Power Dissipation Pd:1.6W; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:-4A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Package / Case:SuperSOT-6; Power Dissipation Pd:1.6W; Power Dissipation Pd:1.6W; Pulse Current Idm:20A; SMD Marking:FDC658P; Termination Type:SMD; Uni / Bi Directional Polarity:P; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:-1.7V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Max:-3V
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.
P-Channel PowerTrench® MOSFET, Logic Level, -30V, -4A, 50mΩ
MOSFET P-CH 30V 4A SSOT-6 / Trans MOSFET P-CH 30V 4A 6-Pin TSOT-23 T/R
TVS - Varistors, MOVs Bulk Disc 20mm 1 420J Through Hole 675V -40°C~85°C TA 825V 1 (Unlimited) Var 460VAC/615VDC 7500A 750V Radial Bulk
MOSFET, P, SUPERSOT-6; Transistor Polarity:P Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):50mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.7V; Power Dissipation Pd:1.6W; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:-4A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Package / Case:SuperSOT-6; Power Dissipation Pd:1.6W; Power Dissipation Pd:1.6W; Pulse Current Idm:20A; SMD Marking:FDC658P; Termination Type:SMD; Uni / Bi Directional Polarity:P; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:-1.7V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Max:-3V
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.
The three parts on the right have similar specifications to FDC658P.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceAdditional FeatureSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormCurrent RatingNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageMax Junction Temperature (Tj)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageTerminationDual Supply VoltageNominal VgsPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Qualification StatusView Compare
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FDC658PACTIVE (Last Updated: 2 days ago)10 WeeksTinSurface MountSurface MountSOT-23-6 Thin, TSOT-23-6636mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2017e3yesActive1 (Unlimited)6EAR9950mOhmLOGIC LEVEL COMPATIBLEOther Transistors-30VMOSFET (Metal Oxide)DUALGULL WING-4A111.6W TaSingleENHANCEMENT MODE1.6W12 nsP-ChannelSWITCHING50m Ω @ 4A, 10V3V @ 250μA750pF @ 15V4A Ta12nC @ 5V14ns30V10V±20V16 ns24 ns-4A-1.7V20V4A-30V150°C1.1mm3mm1.7mmNo SVHCNoROHS3 CompliantLead Free--------
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----Surface MountSOT-23-6 Thin, TSOT-23-6----55°C~150°C TJTape & Reel (TR)PowerTrench®2008--Obsolete1 (Unlimited)------MOSFET (Metal Oxide)-----1.6W Ta----P-Channel-35mOhm @ 5.5A, 4.5V1.5V @ 250μA1456pF @ 10V5.5A Ta20nC @ 4.5V-20V2.5V 4.5V±12V---------------SuperSOT™-6------
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ACTIVE (Last Updated: 2 days ago)10 WeeksTinSurface MountSurface MountSOT-23-6 Thin, TSOT-23-6630mgSILICON-55°C~150°C TJTape & Reel (TR)-1997e3yesActive1 (Unlimited)6EAR9935MOhm-FET General Purpose Power30VMOSFET (Metal Oxide)DUALGULL WING5A111.6W TaSingleENHANCEMENT MODE1.6W7.5 nsN-ChannelSWITCHING35m Ω @ 5A, 10V2V @ 250μA350pF @ 15V5A Ta17nC @ 10V12ns-4.5V 10V±20V12 ns13 ns5A1.7V20V5A30V150°C1.1mm3mm1.7mmNo SVHCNoROHS3 CompliantLead Free-SMD/SMT30V1.7 V---
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ACTIVE (Last Updated: 2 days ago)13 WeeksTinSurface MountSurface MountSOT-23-6 Thin, TSOT-23-6636mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2017e3yesActive1 (Unlimited)6EAR9965mOhm-Other Transistors-20VMOSFET (Metal Oxide)DUALGULL WING-4A1-1.6W TaSingleENHANCEMENT MODE1.6W6 nsP-ChannelSWITCHING65m Ω @ 4A, 4.5V1.5V @ 250μA925pF @ 10V4A Ta16nC @ 4.5V7ns20V2.5V 4.5V±8V7 ns120 ns4A-600mV8V4A-20V-1mm3mm1.7mmNo SVHC-ROHS3 CompliantLead Free----NOT SPECIFIEDNOT SPECIFIEDNot Qualified
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