Fairchild/ON Semiconductor FDC6561AN

Name: FDC6561AN
Brand: Fairchild/ON Semiconductor
SKU: 3069597-FDC6561AN
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDC6561AN

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3069597-FDC6561AN

Description:: MOSFET 2N-CH 30V 2.5A SSOT6

ECAD Model:

Datasheet:: FDC6561AN

Specifications

Fairchild/ON Semiconductor FDC6561AN technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDC6561AN.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
10 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2017
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Resistance
95mOhm
Additional Feature
LOGIC LEVEL COMPATIBLE
Subcategory
FET General Purpose Power
Voltage - Rated DC
30V
Max Power Dissipation
960mW
Terminal Form
GULL WING
Current Rating
2.5A
Number of Elements
2
Voltage
30V
Element Configuration
Dual
Current
24A
Operating Mode
ENHANCEMENT MODE
Power Dissipation
960mW
Turn On Delay Time
6 ns
Power - Max
700mW
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
95m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
220pF @ 15V
Gate Charge (Qg) (Max) @ Vgs
3.2nC @ 5V
Rise Time
10ns
Fall Time (Typ)
10 ns
Turn-Off Delay Time
12 ns
Continuous Drain Current (ID)
2.5A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Dual Supply Voltage
30V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Nominal Vgs
1.8 V
Height
1mm
Length
3mm
Width
1.7mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDC6561AN Description These N-channel logic level MOSFET are manufactured using an advanced PowerTritch process that is customized to minimize on-resistance while maintaining low gate charge for excellent switching performance. These devices are ideal for all applications that require small size but especially low-cost DC/DC conversions in battery power systems.
FDC6561AN Features 2.5 A, 30 V RDS(ON) = 0.095 |? @ VGS = 10 V RDS(ON) = 0.145 |? @ VGS = 4.5 V Very fast switching Low gate charge (2.1nC typical SuperSOT?-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)
FDC6561AN Applications This product is general usage and suitable for many different applications.

FDC6561AN More Descriptions

FDC6561AN ON Semiconductor Transistor MOSFET N-CH30V 2.5A 6-Pin TSOT-23 T/R, RoHS
Transistor MOSFET Array Dual N-CH 30V 2.5A 6-Pin TSOT-23 T/R - Tape and Reel
Dual N-Channel PowerTrench® MOSFET, Logic Level, 30V, 2.5A, 95mΩ
Transistor MOSFET N-Channel 30 Volt 2.5A 6-Pin SuperSOT
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for all applications where small size is desireable but especially low cost DC/DC conversion in battery powered systems.
MOSFET, DUAL, NN, SUPERSOT-6; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):95mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:960mW; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.5A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:2; Package / Case:SuperSOT-6; Power Dissipation Pd:960mW; Power Dissipation Pd:960mW; Pulse Current Idm:10A; SMD Marking:FDC6561AN; Termination Type:SMD; Uni / Bi Directional Polarity:NN; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V

Product Comparison

The three parts on the right have similar specifications to FDC6561AN.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Additional Feature

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Form

Current Rating

Number of Elements

Voltage

Element Configuration

Current

Operating Mode

Power Dissipation

Turn On Delay Time

Power - Max

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

FET Technology

FET Feature

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Current - Continuous Drain (Id) @ 25°C

Drain to Source Voltage (Vdss)

Weight

Number of Channels

Polarity/Channel Type

Threshold Voltage

Max Junction Temperature (Tj)

View Compare
FDC6561AN

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

10 Weeks

Tin

Surface Mount

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2017

e3

yes

Active

1 (Unlimited)

6

EAR99

95mOhm

LOGIC LEVEL COMPATIBLE

FET General Purpose Power

30V

960mW

GULL WING

2.5A

2

30V

Dual

24A

ENHANCEMENT MODE

960mW

6 ns

700mW

2 N-Channel (Dual)

SWITCHING

95m Ω @ 2.5A, 10V

3V @ 250μA

220pF @ 15V

3.2nC @ 5V

10ns

10 ns

12 ns

2.5A

20V

30V

30V

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

1.8 V

1mm

3mm

1.7mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-
FDC6312P

Fairchild/ON Semiconductor

-

-

-

-

-

TSOP-6

-

-

-

Tape & Reel (TR)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

-

-

-

-

-

-

-

-

FDC6561AN vs FDC6312P
FDC6036P_F077

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

6-SSOT Flat-lead, SuperSOT™-6 FLMP

-

-

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

900mW

2 P-Channel (Dual)

-

44mOhm @ 5A, 4.5V

1.5V @ 250μA

992pF @ 10V

14nC @ 4.5V

-

-

-

-

-

-

-

-

Logic Level Gate

-

-

-

-

-

-

-

-

SuperSOT™-6

5A

20V

-

-

-

-

-

FDC6561AN vs FDC6036P_F077
FDC6333C

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

10 Weeks

Tin

Surface Mount

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2017

e3

yes

Active

1 (Unlimited)

6

EAR99

95MOhm

-

Other Transistors

-

960mW

GULL WING

2.5A

2

-

Dual

-

ENHANCEMENT MODE

960mW

4.5 ns

700mW

N and P-Channel

SWITCHING

95m Ω @ 2.5A, 10V

3V @ 250μA

282pF @ 15V

6.6nC @ 10V

13ns

13 ns

11 ns

2.5A

25V

-30V

-

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

1.8 V

1mm

3mm

1.7mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

2.5A 2A

30V

36mg

2

N-CHANNEL AND P-CHANNEL

1.8V

150°C

FDC6561AN vs FDC6333C

Certification

Related parts for FDC6561AN

FDC6302P

Fairchild/ON Semiconductor

MOSFET 2P-CH 25V 0.12A SSOT6
FDC6312P

Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 2.3A SSOT-6
FDC6036P_F077

Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 5A 6SSOT
FDC6333C

Fairchild/ON Semiconductor

MOSFET N/P-CH 30V 2.5A/2A SSOT6
FDC6318P

Fairchild/ON Semiconductor

MOSFET 2P-CH 12V 2.5A SSOT-6
FDC6303N

Fairchild/ON Semiconductor

MOSFET 2N-CH 25V 0.68A SSOT6

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FDC6561AN Specification

Part Number	Manufacturers	Description	Stock	Price
FDC6561AN DISTI #FDC6561ANCT-ND	ON Semiconductor	MOSFET 2N-CH 30V 2.5A SSOT6 RoHS: Compliant	32326	1 $0.55 10 $0.472 100 $0.3525 500 $0.27694 1000 $0.214
FDC6561AN DISTI #FDC6561ANDKR-ND	ON Semiconductor	MOSFET 2N-CH 30V 2.5A SSOT6 RoHS: Compliant	32326	1 $0.55 10 $0.472 100 $0.3525 500 $0.27694 1000 $0.214
FDC6561AN DISTI #FDC6561ANTR-ND	ON Semiconductor	MOSFET 2N-CH 30V 2.5A SSOT6 RoHS: Compliant	30000	3000 $0.18944 6000 $0.17722 15000 $0.165 30000 $0.15644
FDC6561AN DISTI #FDC6561AN	ON Semiconductor	Trans MOSFET N-CH 30V 2.5A 6-Pin SuperSOT T/R - Ta RoHS: Compliant	0	3000 $0.0939 6000 $0.0929 12000 $0.0919 18000 $0.0909 30000 $0.0879
FDC6561AN DISTI #FDC6561AN	ON Semiconductor	Trans MOSFET N-CH 30V 2.5A 6-Pin SuperSOT T/R - Cu RoHS: Compliant	0	1 $0.11095 22 $0.10922 44 $0.10837 87 $0.10672 174 $0.10356 348 $0.09845 695 $0.09197
FDC6561AN DISTI #FDC6561AN	ON Semiconductor	Trans MOSFET N-CH 30V 2.5A 6-Pin SuperSOT T/R (Alt RoHS: Compliant	0	3000 $0.1559 6000 $0.1209 12000 $0.0989 18000 $0.0839 30000 $0.0779
FDC6561AN DISTI #FDC6561AN	ON Semiconductor	Trans MOSFET N-CH 30V 2.5A 6-Pin SuperSOT T/R (Alt RoHS: Compliant	0	3000 $0.2024 6000 $0.19462 9000 $0.18741 15000 $0.18071 30000 $0.17448 75000 $0.16867 150000 $0.1659
FDC6561AN-T DISTI #FDC6561AN-T	ON Semiconductor	Trans MOSFET N-CH 30V 2.5A 4-Pin TSOT-23 T/R (Alt: RoHS: Compliant	0
FDC6561AN DISTI #67R2043	ON Semiconductor	MOSFET, FULL REEL, Transistor Polarity:Dual N Cha	0	1 $0.187 3000 $0.183 6000 $0.179 12000 $0.175 18000 $0.171 30000 $0.167
FDC6561AN DISTI #58K8828	ON Semiconductor	DUAL N CHANNEL MOSFET, 30V, SUPER SOT-6, Transist	0	1 $0.549 25 $0.452 50 $0.366 100 $0.279 250 $0.259 500 $0.238 1000 $0.218
FDC6561AN DISTI #25M9447	ON Semiconductor	Dual MOSFET, Dual N Channel, 2.5 A, 30 V, 0.082 oh	0	1 $0.535 10 $0.447 25 $0.389 50 $0.331 100 $0.273 250 $0.252 500 $0.232 1000 $0.211
FDC6561AN. DISTI #25AC9532	Fairchild Semiconductor Corporation	30V DUAL SSOT-6 NCH ROHS COMPLIANT: YES	0	1 $0.094 6000 $0.093 12000 $0.092 18000 $0.091 30000 $0.088
FDC6561AN DISTI #	ON Semiconductor	Dual N-Channel 30 V 0.095 Ohm Logic Level PowerTre RoHS: Compliant	9000	3000 $0.125 6000 $0.119
FDC6561AN DISTI #512-FDC6561AN	ON Semiconductor	MOSFET SSOT-6 N-CH 30V RoHS: Compliant	4655	1 $0.53 10 $0.443 100 $0.27 1000 $0.209 3000 $0.178 9000 $0.166 24000 $0.158 45000 $0.154
FDC6561AN_Q DISTI #512-FDC6561AN_Q	ON Semiconductor	MOSFET N-Channel 30V RoHS: Not Compliant	0
FDC6561AN DISTI #	Fairchild Semiconductor Corporation	MOSFET Transistor, Matched Pair, N-Channel, SO	14	1 $0.44 12 $0.33
FDC6561AN DISTI #7619838P	ON Semiconductor	MOSFET N-CHANNEL 30V 2.5A SUPERSOT6, RL	2280	100 $0.195 500 $0.173 1000 $0.15 3000 $0.127
FDC6561AN DISTI #7619838	ON Semiconductor	MOSFET N-CHANNEL 30V 2.5A SUPERSOT6, PK	100	10 $0.374 100 $0.195 500 $0.173 1000 $0.15 3000 $0.127
FDC6561AN DISTI #	Fairchild Semiconductor Corporation		2239
FDC6561AN DISTI #FDC6561AN	ON Semiconductor	Transistor: N-MOSFET x2, unipolar, 30V, 2.5A,	2375	5 $0.1903 25 $0.1644 100 $0.1329 500 $0.1182 3000 $0.1104
FDC6561AN DISTI #XSFP00000085390	Fairchild Semiconductor Corporation	RoHS: Compliant	6000	3000 $0.1786 6000 $0.1667
FDC6561AN DISTI #9844813	ON Semiconductor	MOSFET, DUAL, NN, SUPERSOT-6 RoHS: Compliant	2955	1 $0.815 10 $0.682 100 $0.416
FDC6561AN DISTI #2323165	ON Semiconductor	MOSFET, DUAL N CH, 30V, 2.5A, SUPERSOT RoHS: Compliant	3000	3000 $0.32
FDC6561AN DISTI #9844813RL	ON Semiconductor	MOSFET, DUAL, NN, SUPERSOT-6 RoHS: Compliant	0	1 $0.815 10 $0.682 100 $0.416
FDC6561AN DISTI #2323165	ON Semiconductor	MOSFET, DUAL N CH, 30V, 2.5A, SUPERSOT	6000	3000 $0.138 9000 $0.125

FDC6561~~(5)~~
FDC656~~(5)~~
FDC65~~(39)~~
FDC6~~(122)~~
FDC~~(119)~~

Fairchild/ON Semiconductor FDC6561AN

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