Fairchild/ON Semiconductor FDC6318P
- Part Number:
- FDC6318P
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2847734-FDC6318P
- Description:
- MOSFET 2P-CH 12V 2.5A SSOT-6
- Datasheet:
- FDC6318P
Fairchild/ON Semiconductor FDC6318P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDC6318P.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time10 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-23-6 Thin, TSOT-23-6
- Number of Pins6
- Weight36mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2001
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance90MOhm
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-12V
- Max Power Dissipation960mW
- Terminal FormGULL WING
- Current Rating-2.5A
- Number of Elements2
- Number of Channels2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation960mW
- Turn On Delay Time9 ns
- Power - Max700mW
- FET Type2 P-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs90m Ω @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds455pF @ 6V
- Current - Continuous Drain (Id) @ 25°C2.5A
- Gate Charge (Qg) (Max) @ Vgs8nC @ 4.5V
- Rise Time14ns
- Fall Time (Typ)14 ns
- Turn-Off Delay Time21 ns
- Continuous Drain Current (ID)-2.5A
- Threshold Voltage-700mV
- Gate to Source Voltage (Vgs)8V
- Drain to Source Breakdown Voltage-12V
- Dual Supply Voltage12V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Max Junction Temperature (Tj)150°C
- FET FeatureLogic Level Gate
- Nominal Vgs700 mV
- Height1.1mm
- Length3mm
- Width1.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDC6318P Description
These P-channel 1.8V MOSFET are manufactured using Fairchild Semiconductor's advanced PowerTrack process, which is tailor-made to minimize on-resistance and maintain low gate charge to achieve excellent switching performance.
FDC6318P Features
-2.5A-12VRsN=90mΩ@Vas=45V RpsoN=125mQ@Vs=-2.5V RDsON=200mΩ@Vas=-18V .High performance trench technology for extremely lowRasjon ·SuperSOTTM-6 package small footprint(72% smaller than standard SO-8): low profile(1mm thick FDC6318P Applications
Power management Load switch
FDC6318P Features
-2.5A-12VRsN=90mΩ@Vas=45V RpsoN=125mQ@Vs=-2.5V RDsON=200mΩ@Vas=-18V .High performance trench technology for extremely lowRasjon ·SuperSOTTM-6 package small footprint(72% smaller than standard SO-8): low profile(1mm thick FDC6318P Applications
Power management Load switch
FDC6318P More Descriptions
Transistor MOSFET Array Dual P-CH 12V 2.5A 6-Pin TSOT-23 T/R - Tape and Reel
Dual P-Channel PowerTrench® MOSFET, 1.8V specified, -12V, -2.5A, 90mΩ
MOSFET, PP; Transistor Polarity:P Channel; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:960mW; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:2.5A; Current Id Max:-2.5A; Drain Source Voltage Vds:-12V; Module Configuration:Dual; On Resistance Rds(on):90mohm; Package / Case:SuperSOT; Power Dissipation Pd:960mW; Termination Type:SMD; Voltage Vds Typ:12V; Voltage Vgs Max:-700mV; Voltage Vgs Rds on Measurement:4.5V
These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
Dual P-Channel PowerTrench® MOSFET, 1.8V specified, -12V, -2.5A, 90mΩ
MOSFET, PP; Transistor Polarity:P Channel; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:960mW; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:2.5A; Current Id Max:-2.5A; Drain Source Voltage Vds:-12V; Module Configuration:Dual; On Resistance Rds(on):90mohm; Package / Case:SuperSOT; Power Dissipation Pd:960mW; Termination Type:SMD; Voltage Vds Typ:12V; Voltage Vgs Max:-700mV; Voltage Vgs Rds on Measurement:4.5V
These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
The three parts on the right have similar specifications to FDC6318P.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormCurrent RatingNumber of ElementsNumber of ChannelsElement ConfigurationOperating ModePower DissipationTurn On Delay TimePower - MaxFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageFET TechnologyMax Junction Temperature (Tj)FET FeatureNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageDrain to Source Voltage (Vdss)Contact PlatingPolarity/Channel TypeView Compare
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FDC6318PACTIVE (Last Updated: 2 days ago)10 WeeksSurface MountSurface MountSOT-23-6 Thin, TSOT-23-6636mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2001e3yesActive1 (Unlimited)6SMD/SMTEAR9990MOhmTin (Sn)Other Transistors-12V960mWGULL WING-2.5A22DualENHANCEMENT MODE960mW9 ns700mW2 P-Channel (Dual)SWITCHING90m Ω @ 2.5A, 4.5V1.5V @ 250μA455pF @ 6V2.5A8nC @ 4.5V14ns14 ns21 ns-2.5A-700mV8V-12V12VMETAL-OXIDE SEMICONDUCTOR150°CLogic Level Gate700 mV1.1mm3mm1.7mmNo SVHCNoROHS3 CompliantLead Free-----
-
----TSOP-6----Tape & Reel (TR)-----------------------------------------------RoHS Compliant-----
-
---Surface Mount6-SSOT Flat-lead, SuperSOT™-6 FLMP----55°C~150°C TJTape & Reel (TR)PowerTrench®---Obsolete1 (Unlimited)----------------900mW2 P-Channel (Dual)-44mOhm @ 5A, 4.5V1.5V @ 250μA992pF @ 10V5A14nC @ 4.5V----------Logic Level Gate--------SuperSOT™-620V--
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ACTIVE (Last Updated: 2 days ago)10 WeeksSurface MountSurface MountSOT-23-6 Thin, TSOT-23-6636mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2017e3yesActive1 (Unlimited)6-EAR9995MOhm-Other Transistors-960mWGULL WING2.5A22DualENHANCEMENT MODE960mW4.5 ns700mWN and P-ChannelSWITCHING95m Ω @ 2.5A, 10V3V @ 250μA282pF @ 15V2.5A 2A6.6nC @ 10V13ns13 ns11 ns2.5A1.8V25V-30V-METAL-OXIDE SEMICONDUCTOR150°CLogic Level Gate1.8 V1mm3mm1.7mmNo SVHCNoROHS3 CompliantLead Free-30VTinN-CHANNEL AND P-CHANNEL
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