FDC6318P

Fairchild/ON Semiconductor FDC6318P

Part Number:
FDC6318P
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2847734-FDC6318P
Description:
MOSFET 2P-CH 12V 2.5A SSOT-6
ECAD Model:
Datasheet:
FDC6318P

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Specifications
Fairchild/ON Semiconductor FDC6318P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDC6318P.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    10 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-23-6 Thin, TSOT-23-6
  • Number of Pins
    6
  • Weight
    36mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2001
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    90MOhm
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -12V
  • Max Power Dissipation
    960mW
  • Terminal Form
    GULL WING
  • Current Rating
    -2.5A
  • Number of Elements
    2
  • Number of Channels
    2
  • Element Configuration
    Dual
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    960mW
  • Turn On Delay Time
    9 ns
  • Power - Max
    700mW
  • FET Type
    2 P-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    90m Ω @ 2.5A, 4.5V
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    455pF @ 6V
  • Current - Continuous Drain (Id) @ 25°C
    2.5A
  • Gate Charge (Qg) (Max) @ Vgs
    8nC @ 4.5V
  • Rise Time
    14ns
  • Fall Time (Typ)
    14 ns
  • Turn-Off Delay Time
    21 ns
  • Continuous Drain Current (ID)
    -2.5A
  • Threshold Voltage
    -700mV
  • Gate to Source Voltage (Vgs)
    8V
  • Drain to Source Breakdown Voltage
    -12V
  • Dual Supply Voltage
    12V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Max Junction Temperature (Tj)
    150°C
  • FET Feature
    Logic Level Gate
  • Nominal Vgs
    700 mV
  • Height
    1.1mm
  • Length
    3mm
  • Width
    1.7mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDC6318P   Description      These P-channel 1.8V MOSFET are manufactured using Fairchild Semiconductor's advanced PowerTrack process, which is tailor-made to minimize on-resistance and maintain low gate charge to achieve excellent switching performance.
FDC6318P     Features
-2.5A-12VRsN=90mΩ@Vas=45V RpsoN=125mQ@Vs=-2.5V RDsON=200mΩ@Vas=-18V .High performance trench technology for extremely lowRasjon ·SuperSOTTM-6 package small footprint(72% smaller than standard SO-8): low profile(1mm thick   FDC6318P      Applications
Power management  Load switch

FDC6318P More Descriptions
Transistor MOSFET Array Dual P-CH 12V 2.5A 6-Pin TSOT-23 T/R - Tape and Reel
Dual P-Channel PowerTrench® MOSFET, 1.8V specified, -12V, -2.5A, 90mΩ
MOSFET, PP; Transistor Polarity:P Channel; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:960mW; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:2.5A; Current Id Max:-2.5A; Drain Source Voltage Vds:-12V; Module Configuration:Dual; On Resistance Rds(on):90mohm; Package / Case:SuperSOT; Power Dissipation Pd:960mW; Termination Type:SMD; Voltage Vds Typ:12V; Voltage Vgs Max:-700mV; Voltage Vgs Rds on Measurement:4.5V
These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
Product Comparison
The three parts on the right have similar specifications to FDC6318P.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Form
    Current Rating
    Number of Elements
    Number of Channels
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    Power - Max
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    FET Technology
    Max Junction Temperature (Tj)
    FET Feature
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    Contact Plating
    Polarity/Channel Type
    View Compare
  • FDC6318P
    FDC6318P
    ACTIVE (Last Updated: 2 days ago)
    10 Weeks
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    6
    36mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2001
    e3
    yes
    Active
    1 (Unlimited)
    6
    SMD/SMT
    EAR99
    90MOhm
    Tin (Sn)
    Other Transistors
    -12V
    960mW
    GULL WING
    -2.5A
    2
    2
    Dual
    ENHANCEMENT MODE
    960mW
    9 ns
    700mW
    2 P-Channel (Dual)
    SWITCHING
    90m Ω @ 2.5A, 4.5V
    1.5V @ 250μA
    455pF @ 6V
    2.5A
    8nC @ 4.5V
    14ns
    14 ns
    21 ns
    -2.5A
    -700mV
    8V
    -12V
    12V
    METAL-OXIDE SEMICONDUCTOR
    150°C
    Logic Level Gate
    700 mV
    1.1mm
    3mm
    1.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
  • FDC6312P
    -
    -
    -
    -
    TSOP-6
    -
    -
    -
    -
    Tape & Reel (TR)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    -
    -
    -
    -
  • FDC6036P_F077
    -
    -
    -
    Surface Mount
    6-SSOT Flat-lead, SuperSOT™-6 FLMP
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    900mW
    2 P-Channel (Dual)
    -
    44mOhm @ 5A, 4.5V
    1.5V @ 250μA
    992pF @ 10V
    5A
    14nC @ 4.5V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Logic Level Gate
    -
    -
    -
    -
    -
    -
    -
    -
    SuperSOT™-6
    20V
    -
    -
  • FDC6333C
    ACTIVE (Last Updated: 2 days ago)
    10 Weeks
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    6
    36mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2017
    e3
    yes
    Active
    1 (Unlimited)
    6
    -
    EAR99
    95MOhm
    -
    Other Transistors
    -
    960mW
    GULL WING
    2.5A
    2
    2
    Dual
    ENHANCEMENT MODE
    960mW
    4.5 ns
    700mW
    N and P-Channel
    SWITCHING
    95m Ω @ 2.5A, 10V
    3V @ 250μA
    282pF @ 15V
    2.5A 2A
    6.6nC @ 10V
    13ns
    13 ns
    11 ns
    2.5A
    1.8V
    25V
    -30V
    -
    METAL-OXIDE SEMICONDUCTOR
    150°C
    Logic Level Gate
    1.8 V
    1mm
    3mm
    1.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    30V
    Tin
    N-CHANNEL AND P-CHANNEL
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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