Fairchild/ON Semiconductor FDC6303N
- Part Number:
- FDC6303N
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2847634-FDC6303N
- Description:
- MOSFET 2N-CH 25V 0.68A SSOT6
- Datasheet:
- FDC6303N
Fairchild/ON Semiconductor FDC6303N technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDC6303N.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time10 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-23-6 Thin, TSOT-23-6
- Number of Pins6
- Weight36mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published1997
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance450mOhm
- Terminal FinishTin (Sn)
- Additional FeatureLOGIC LEVEL COMPATIBLE
- SubcategoryFET General Purpose Power
- Voltage - Rated DC25V
- Max Power Dissipation900mW
- Terminal FormGULL WING
- Current Rating680mA
- Number of Elements2
- Number of Channels2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation900mW
- Turn On Delay Time3 ns
- Power - Max700mW
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs450m Ω @ 500mA, 4.5V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds50pF @ 10V
- Gate Charge (Qg) (Max) @ Vgs2.3nC @ 4.5V
- Rise Time8.5ns
- Fall Time (Typ)13 ns
- Turn-Off Delay Time17 ns
- Continuous Drain Current (ID)680mA
- Threshold Voltage800mV
- Gate to Source Voltage (Vgs)8V
- Drain to Source Breakdown Voltage25V
- Dual Supply Voltage25V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Max Junction Temperature (Tj)150°C
- FET FeatureLogic Level Gate
- Nominal Vgs800 mV
- Height1.1mm
- Length3mm
- Width1.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDC6303N Description
These dual N-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this one N-Channel FET can replace several digital transistors with different bias resistors like the IMHxA series. FDC6303N Features 25 V, 0.68 A continuous, 2 A Peak RDS(ON) = 0.6 |? @ VGS = 2.7 V RDS(ON) = 0.45 |? @ VGS= 4.5 V Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5 V Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Replace multiple NPN digital transistors (IMHxA series) with one DMOS FET
FDC6303N Applications
This product is general usage and suitable for many different applications.
These dual N-Channel logic level enhancement mode field effect transistors are produced using a proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this one N-Channel FET can replace several digital transistors with different bias resistors like the IMHxA series. FDC6303N Features 25 V, 0.68 A continuous, 2 A Peak RDS(ON) = 0.6 |? @ VGS = 2.7 V RDS(ON) = 0.45 |? @ VGS= 4.5 V Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5 V Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Replace multiple NPN digital transistors (IMHxA series) with one DMOS FET
FDC6303N Applications
This product is general usage and suitable for many different applications.
FDC6303N More Descriptions
Transistor MOSFET Array Dual N-CH 25V 0.68A 6-Pin TSOT-23 T/R - Tape and Reel
Transistor, digital FET, dual N-channel, MOSFET, 25V, 0.68A, SUPERSOT6 | ON Semiconductor FDC6303N
Chip Resistor - Surface Mount 75mOhm Wide 1206 (3216 Metric), 0612 ±1% 0/ 150ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ Res Thick Film 1206 0.075 Ohm 1% 1W 0ppm/C to 150ppm/C Molded SMD Punched Carrier T/R
MOSFET, DUAL, N, SMD, SUPERSOT-6; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:900mW; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:680mA; Current Id Max:680mA; Drain Source Voltage Vds:25V; Module Configuration:Dual; On Resistance Rds(on):450mohm; Package / Case:SuperSOT-6; Power Dissipation Pd:900mW; Termination Type:SMD; Voltage Vds Typ:25V; Voltage Vgs Max:800mV; Voltage Vgs Rds on Measurement:4.5V
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this one N-Channel FET can replace several digital transistors with different bias resistors like the IMHxA series.
Transistor, digital FET, dual N-channel, MOSFET, 25V, 0.68A, SUPERSOT6 | ON Semiconductor FDC6303N
Chip Resistor - Surface Mount 75mOhm Wide 1206 (3216 Metric), 0612 ±1% 0/ 150ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ Res Thick Film 1206 0.075 Ohm 1% 1W 0ppm/C to 150ppm/C Molded SMD Punched Carrier T/R
MOSFET, DUAL, N, SMD, SUPERSOT-6; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:900mW; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:680mA; Current Id Max:680mA; Drain Source Voltage Vds:25V; Module Configuration:Dual; On Resistance Rds(on):450mohm; Package / Case:SuperSOT-6; Power Dissipation Pd:900mW; Termination Type:SMD; Voltage Vds Typ:25V; Voltage Vgs Max:800mV; Voltage Vgs Rds on Measurement:4.5V
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this one N-Channel FET can replace several digital transistors with different bias resistors like the IMHxA series.
The three parts on the right have similar specifications to FDC6303N.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationTerminal FormCurrent RatingNumber of ElementsNumber of ChannelsElement ConfigurationOperating ModePower DissipationTurn On Delay TimePower - MaxFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ VgsRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageFET TechnologyMax Junction Temperature (Tj)FET FeatureNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageSeriesCurrent - Continuous Drain (Id) @ 25°CDrain to Source Voltage (Vdss)Contact PlatingPolarity/Channel TypeView Compare
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FDC6303NACTIVE (Last Updated: 1 day ago)10 WeeksSurface MountSurface MountSOT-23-6 Thin, TSOT-23-6636mgSILICON-55°C~150°C TJTape & Reel (TR)1997e3yesActive1 (Unlimited)6SMD/SMTEAR99450mOhmTin (Sn)LOGIC LEVEL COMPATIBLEFET General Purpose Power25V900mWGULL WING680mA22DualENHANCEMENT MODE900mW3 ns700mW2 N-Channel (Dual)SWITCHING450m Ω @ 500mA, 4.5V1.5V @ 250μA50pF @ 10V2.3nC @ 4.5V8.5ns13 ns17 ns680mA800mV8V25V25VMETAL-OXIDE SEMICONDUCTOR150°CLogic Level Gate800 mV1.1mm3mm1.7mmNo SVHCNoROHS3 CompliantLead Free-------
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---Surface Mount6-SSOT Flat-lead, SuperSOT™-6 FLMP----55°C~150°C TJTape & Reel (TR)---Obsolete1 (Unlimited)-----------------900mW2 P-Channel (Dual)-44mOhm @ 5A, 4.5V1.5V @ 250μA992pF @ 10V14nC @ 4.5V----------Logic Level Gate--------SuperSOT™-6PowerTrench®5A20V--
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ACTIVE (Last Updated: 2 days ago)10 WeeksSurface MountSurface MountSOT-23-6 Thin, TSOT-23-6636mgSILICON-55°C~150°C TJTape & Reel (TR)2017e3yesActive1 (Unlimited)6-EAR9995MOhm--Other Transistors-960mWGULL WING2.5A22DualENHANCEMENT MODE960mW4.5 ns700mWN and P-ChannelSWITCHING95m Ω @ 2.5A, 10V3V @ 250μA282pF @ 15V6.6nC @ 10V13ns13 ns11 ns2.5A1.8V25V-30V-METAL-OXIDE SEMICONDUCTOR150°CLogic Level Gate1.8 V1mm3mm1.7mmNo SVHCNoROHS3 CompliantLead Free-PowerTrench®2.5A 2A30VTinN-CHANNEL AND P-CHANNEL
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ACTIVE (Last Updated: 2 days ago)10 WeeksSurface MountSurface MountSOT-23-6 Thin, TSOT-23-6636mgSILICON-55°C~150°C TJTape & Reel (TR)2001e3yesActive1 (Unlimited)6SMD/SMTEAR9990MOhmTin (Sn)-Other Transistors-12V960mWGULL WING-2.5A22DualENHANCEMENT MODE960mW9 ns700mW2 P-Channel (Dual)SWITCHING90m Ω @ 2.5A, 4.5V1.5V @ 250μA455pF @ 6V8nC @ 4.5V14ns14 ns21 ns-2.5A-700mV8V-12V12VMETAL-OXIDE SEMICONDUCTOR150°CLogic Level Gate700 mV1.1mm3mm1.7mmNo SVHCNoROHS3 CompliantLead Free-PowerTrench®2.5A---
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