Fairchild/ON Semiconductor FDC6333C
- Part Number:
- FDC6333C
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2847742-FDC6333C
- Description:
- MOSFET N/P-CH 30V 2.5A/2A SSOT6
- Datasheet:
- FDC6333C
Fairchild/ON Semiconductor FDC6333C technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDC6333C.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time10 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-23-6 Thin, TSOT-23-6
- Number of Pins6
- Weight36mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2017
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Resistance95MOhm
- SubcategoryOther Transistors
- Max Power Dissipation960mW
- Terminal FormGULL WING
- Current Rating2.5A
- Number of Elements2
- Number of Channels2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation960mW
- Turn On Delay Time4.5 ns
- Power - Max700mW
- FET TypeN and P-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs95m Ω @ 2.5A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds282pF @ 15V
- Current - Continuous Drain (Id) @ 25°C2.5A 2A
- Gate Charge (Qg) (Max) @ Vgs6.6nC @ 10V
- Rise Time13ns
- Drain to Source Voltage (Vdss)30V
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Fall Time (Typ)13 ns
- Turn-Off Delay Time11 ns
- Continuous Drain Current (ID)2.5A
- Threshold Voltage1.8V
- Gate to Source Voltage (Vgs)25V
- Drain to Source Breakdown Voltage-30V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Max Junction Temperature (Tj)150°C
- FET FeatureLogic Level Gate
- Nominal Vgs1.8 V
- Height1mm
- Length3mm
- Width1.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDC6333C Description
The FDC6333C is an N/P-channel MOSFET produced using an advanced PowerTrench? process. The Onsemi FDC6333C has been specially tailored to minimize ON-state resistance and yet maintain superior switching performance. It has been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive packages are impractical. The MOSFET FDC6333C is suitable for use with DC-to-DC converter, load switch, and LCD display inverter applications. The FDC6333C is offered in the SOT-23-3 package. It is specified for operation from –55°C to 150°C.
FDC6333C Features
Q1 2.5 A, 30V
RDS(on) = 95 mΩ@ VGS = 10 V
RDS(on) = 150 mΩ @ VGS = 4.5 V
Q2 –2.0 A, 30V.
RDS(on) = 150 mΩ@ VGS = -10 V
RDS(on) = 220 mΩ @ VGS = -4.5 V
Low gate charge
High-performance trench technology for extremely low RDS(ON)
SuperSOT –6 package: small footprint (72% smaller than SO-8); low profile (1mm thick).
FDC6333C Applications
Industrial
Power Management
DC/DC converter
Load switch
LCD display inverter
The FDC6333C is an N/P-channel MOSFET produced using an advanced PowerTrench? process. The Onsemi FDC6333C has been specially tailored to minimize ON-state resistance and yet maintain superior switching performance. It has been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive packages are impractical. The MOSFET FDC6333C is suitable for use with DC-to-DC converter, load switch, and LCD display inverter applications. The FDC6333C is offered in the SOT-23-3 package. It is specified for operation from –55°C to 150°C.
FDC6333C Features
Q1 2.5 A, 30V
RDS(on) = 95 mΩ@ VGS = 10 V
RDS(on) = 150 mΩ @ VGS = 4.5 V
Q2 –2.0 A, 30V.
RDS(on) = 150 mΩ@ VGS = -10 V
RDS(on) = 220 mΩ @ VGS = -4.5 V
Low gate charge
High-performance trench technology for extremely low RDS(ON)
SuperSOT –6 package: small footprint (72% smaller than SO-8); low profile (1mm thick).
FDC6333C Applications
Industrial
Power Management
DC/DC converter
Load switch
LCD display inverter
FDC6333C More Descriptions
Transistor MOSFET N/P-Channel 30 Volt 2.5A/2A 6-Pin SuperSOT
ON SEMICONDUCTOR - FDC6333C - Dual MOSFET, N and P Channel, 2.5 A, 30 V, 0.095 ohm, 10 V, 1.8 V
Dual N / P-Channel 30 V 95 mOhm PowerTrench Mosfet - SSOT-6
Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
MOSFET, N & P-CH, 30V, 2.5A, SUPERSOT; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 2.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.073ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 960mW; Transistor Case Style: SuperSOT; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
ON SEMICONDUCTOR - FDC6333C - Dual MOSFET, N and P Channel, 2.5 A, 30 V, 0.095 ohm, 10 V, 1.8 V
Dual N / P-Channel 30 V 95 mOhm PowerTrench Mosfet - SSOT-6
Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
MOSFET, N & P-CH, 30V, 2.5A, SUPERSOT; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 2.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.073ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 960mW; Transistor Case Style: SuperSOT; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The three parts on the right have similar specifications to FDC6333C.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryMax Power DissipationTerminal FormCurrent RatingNumber of ElementsNumber of ChannelsElement ConfigurationOperating ModePower DissipationTurn On Delay TimePower - MaxFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Polarity/Channel TypeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageFET TechnologyMax Junction Temperature (Tj)FET FeatureNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageTerminationTerminal FinishVoltage - Rated DCDual Supply VoltageView Compare
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FDC6333CACTIVE (Last Updated: 2 days ago)10 WeeksTinSurface MountSurface MountSOT-23-6 Thin, TSOT-23-6636mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2017e3yesActive1 (Unlimited)6EAR9995MOhmOther Transistors960mWGULL WING2.5A22DualENHANCEMENT MODE960mW4.5 ns700mWN and P-ChannelSWITCHING95m Ω @ 2.5A, 10V3V @ 250μA282pF @ 15V2.5A 2A6.6nC @ 10V13ns30VN-CHANNEL AND P-CHANNEL13 ns11 ns2.5A1.8V25V-30VMETAL-OXIDE SEMICONDUCTOR150°CLogic Level Gate1.8 V1mm3mm1.7mmNo SVHCNoROHS3 CompliantLead Free------
-
-----TSOP-6----Tape & Reel (TR)---------------------------------------------RoHS Compliant------
-
----Surface Mount6-SSOT Flat-lead, SuperSOT™-6 FLMP----55°C~150°C TJTape & Reel (TR)PowerTrench®---Obsolete1 (Unlimited)-------------900mW2 P-Channel (Dual)-44mOhm @ 5A, 4.5V1.5V @ 250μA992pF @ 10V5A14nC @ 4.5V-20V---------Logic Level Gate--------SuperSOT™-6----
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ACTIVE (Last Updated: 2 days ago)10 Weeks-Surface MountSurface MountSOT-23-6 Thin, TSOT-23-6636mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2001e3yesActive1 (Unlimited)6EAR9990MOhmOther Transistors960mWGULL WING-2.5A22DualENHANCEMENT MODE960mW9 ns700mW2 P-Channel (Dual)SWITCHING90m Ω @ 2.5A, 4.5V1.5V @ 250μA455pF @ 6V2.5A8nC @ 4.5V14ns--14 ns21 ns-2.5A-700mV8V-12VMETAL-OXIDE SEMICONDUCTOR150°CLogic Level Gate700 mV1.1mm3mm1.7mmNo SVHCNoROHS3 CompliantLead Free-SMD/SMTTin (Sn)-12V12V
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