Fairchild/ON Semiconductor FDC6312P
- Part Number:
- FDC6312P
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3069629-FDC6312P
- Description:
- MOSFET 2P-CH 20V 2.3A SSOT-6
- Datasheet:
- FDC6312P
Fairchild/ON Semiconductor FDC6312P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDC6312P.
- Package / CaseTSOP-6
- PackagingTape & Reel (TR)
- RoHS StatusRoHS Compliant
FDC6312P Overview
This product is manufactured by Fairchild/ON Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet FDC6312P or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of FDC6312P. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Fairchild/ON Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet FDC6312P or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of FDC6312P. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
FDC6312P More Descriptions
Transistor MOSFET Array Dual P-CH 20V 2.3A 6-Pin TSOT-23 T/R - Tape and Reel
Dual P-Channel PowerTrench® MOSFET, 1.8V Specified, -20V, -2.3A, 115mΩ
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:2.3A; On Resistance, Rds(on):0.115ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SuperSOT-6 ;RoHS Compliant: Yes
These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
Dual P-Channel PowerTrench® MOSFET, 1.8V Specified, -20V, -2.3A, 115mΩ
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:2.3A; On Resistance, Rds(on):0.115ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SuperSOT-6 ;RoHS Compliant: Yes
These P-Channel 1.8V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
The three parts on the right have similar specifications to FDC6312P.
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ImagePart NumberManufacturerPackage / CasePackagingRoHS StatusMounting TypeSupplier Device PackageOperating TemperatureSeriesPart StatusMoisture Sensitivity Level (MSL)Power - MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)FET FeatureLifecycle StatusFactory Lead TimeContact PlatingMountNumber of PinsWeightTransistor Element MaterialPublishedJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeResistanceSubcategoryMax Power DissipationTerminal FormCurrent RatingNumber of ElementsNumber of ChannelsElement ConfigurationOperating ModePower DissipationTurn On Delay TimeTransistor ApplicationRise TimePolarity/Channel TypeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageFET TechnologyMax Junction Temperature (Tj)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningLead FreeTerminationTerminal FinishVoltage - Rated DCDual Supply VoltageView Compare
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FDC6312PTSOP-6Tape & Reel (TR)RoHS Compliant-------------------------------------------------------------
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6-SSOT Flat-lead, SuperSOT™-6 FLMPTape & Reel (TR)-Surface MountSuperSOT™-6-55°C~150°C TJPowerTrench®Obsolete1 (Unlimited)900mW2 P-Channel (Dual)44mOhm @ 5A, 4.5V1.5V @ 250μA992pF @ 10V5A14nC @ 4.5V20VLogic Level Gate---------------------------------------------
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SOT-23-6 Thin, TSOT-23-6Tape & Reel (TR)ROHS3 CompliantSurface Mount--55°C~150°C TJPowerTrench®Active1 (Unlimited)700mWN and P-Channel95m Ω @ 2.5A, 10V3V @ 250μA282pF @ 15V2.5A 2A6.6nC @ 10V30VLogic Level GateACTIVE (Last Updated: 2 days ago)10 WeeksTinSurface Mount636mgSILICON2017e3yes6EAR9995MOhmOther Transistors960mWGULL WING2.5A22DualENHANCEMENT MODE960mW4.5 nsSWITCHING13nsN-CHANNEL AND P-CHANNEL13 ns11 ns2.5A1.8V25V-30VMETAL-OXIDE SEMICONDUCTOR150°C1.8 V1mm3mm1.7mmNo SVHCNoLead Free----
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SOT-23-6 Thin, TSOT-23-6Tape & Reel (TR)ROHS3 CompliantSurface Mount--55°C~150°C TJPowerTrench®Active1 (Unlimited)700mW2 P-Channel (Dual)90m Ω @ 2.5A, 4.5V1.5V @ 250μA455pF @ 6V2.5A8nC @ 4.5V-Logic Level GateACTIVE (Last Updated: 2 days ago)10 Weeks-Surface Mount636mgSILICON2001e3yes6EAR9990MOhmOther Transistors960mWGULL WING-2.5A22DualENHANCEMENT MODE960mW9 nsSWITCHING14ns-14 ns21 ns-2.5A-700mV8V-12VMETAL-OXIDE SEMICONDUCTOR150°C700 mV1.1mm3mm1.7mmNo SVHCNoLead FreeSMD/SMTTin (Sn)-12V12V
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