Fairchild/ON Semiconductor FDC6302P

Name: FDC6302P
Brand: Fairchild/ON Semiconductor
SKU: 3585800-FDC6302P
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDC6302P

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3585800-FDC6302P

Description:: MOSFET 2P-CH 25V 0.12A SSOT6

ECAD Model:

Datasheet:: FDC6302P

Specifications

Fairchild/ON Semiconductor FDC6302P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDC6302P.

Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Number of Pins
6
Weight
36mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
1997
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
Termination
SMD/SMT
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-25V
Max Power Dissipation
900mW
Terminal Form
GULL WING
Current Rating
-120mA
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
900mW
Turn On Delay Time
5 ns
Power - Max
700mW
FET Type
2 P-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
10 Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
11pF @ 10V
Current - Continuous Drain (Id) @ 25°C
120mA
Gate Charge (Qg) (Max) @ Vgs
0.31nC @ 4.5V
Rise Time
8ns
Drain to Source Voltage (Vdss)
25V
Fall Time (Typ)
5 ns
Turn-Off Delay Time
9 ns
Continuous Drain Current (ID)
-120mA
Threshold Voltage
-1V
Gate to Source Voltage (Vgs)
8V
Drain to Source Breakdown Voltage
-25V
Dual Supply Voltage
-25V
FET Technology
METAL-OXIDE SEMICONDUCTOR
FET Feature
Logic Level Gate
Nominal Vgs
-1 V
Height
1.12mm
Length
3mm
Width
1.68mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

The ON Semiconductor FDC6302P is a MOSFET SSOT-6 P-CH -25V -2.5A transistor array. This device is designed to provide high-speed switching and low on-resistance in a small package. It features a maximum drain-source voltage of -25V and a maximum drain current of -2.5A. The FDC6302P is ideal for applications such as power management, motor control, and switching power supplies. It is also RoHS compliant and has a maximum junction temperature of 175°C. The FDC6302P is a reliable and cost-effective solution for a variety of applications.

FDC6302P More Descriptions

Transistor MOSFET Array Dual P-CH 25V 0.12A 6-Pin TSOT-23 T/R - Tape and Reel
Transistor MOSFET P Channel 25 Volt 0.12 Amp 6-Pin SuperSOT Tape and Reel
Chip Resistor - Surface Mount 3.9Ohm 1206 (3216 Metric) ±1% ±200ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 3.9 OHM 1% 1/4W 1206
These Dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switchimg applications. Since bias resistors are not required this one P-Channel FET can replace several digital transistors with different bias resistors like the IMBxA series.
MOSFET P CH DUAL 25V 0.12A SSOT6; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: -200mA; Drain Source Voltage Vds: -25V; On Resistance Rds(on): 10ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 900mW; Transistor Case Style: SuperSOT; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: -120mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: -25V; Voltage Vgs Max: -1V; Voltage Vgs Rds on Measurement: -4.5V

Product Comparison

The three parts on the right have similar specifications to FDC6302P.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Form

Current Rating

Number of Elements

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

Power - Max

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

FET Technology

FET Feature

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Series

Resistance

Number of Channels

Max Junction Temperature (Tj)

Additional Feature

View Compare
FDC6302P

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

10 Weeks

Surface Mount

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6

36mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

1997

e3

yes

Active

1 (Unlimited)

6

SMD/SMT

EAR99

Tin (Sn)

Other Transistors

-25V

900mW

GULL WING

-120mA

2

Dual

ENHANCEMENT MODE

900mW

5 ns

700mW

2 P-Channel (Dual)

SWITCHING

10 Ω @ 200mA, 4.5V

1.5V @ 250μA

11pF @ 10V

120mA

0.31nC @ 4.5V

8ns

25V

5 ns

9 ns

-120mA

-1V

8V

-25V

-25V

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

-1 V

1.12mm

3mm

1.68mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-
FDC6036P_F077

Fairchild/ON Semiconductor

-

-

-

Surface Mount

6-SSOT Flat-lead, SuperSOT™-6 FLMP

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

900mW

2 P-Channel (Dual)

-

44mOhm @ 5A, 4.5V

1.5V @ 250μA

992pF @ 10V

5A

14nC @ 4.5V

-

20V

-

-

-

-

-

-

-

-

Logic Level Gate

-

-

-

-

-

-

-

-

SuperSOT™-6

PowerTrench®

-

-

-

-

FDC6302P vs FDC6036P_F077
FDC6318P

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

10 Weeks

Surface Mount

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6

36mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2001

e3

yes

Active

1 (Unlimited)

6

SMD/SMT

EAR99

Tin (Sn)

Other Transistors

-12V

960mW

GULL WING

-2.5A

2

Dual

ENHANCEMENT MODE

960mW

9 ns

700mW

2 P-Channel (Dual)

SWITCHING

90m Ω @ 2.5A, 4.5V

1.5V @ 250μA

455pF @ 6V

2.5A

8nC @ 4.5V

14ns

-

14 ns

21 ns

-2.5A

-700mV

8V

-12V

12V

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

700 mV

1.1mm

3mm

1.7mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

PowerTrench®

90MOhm

2

150°C

-

FDC6302P vs FDC6318P
FDC6303N

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

10 Weeks

Surface Mount

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6

36mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

1997

e3

yes

Active

1 (Unlimited)

6

SMD/SMT

EAR99

Tin (Sn)

FET General Purpose Power

25V

900mW

GULL WING

680mA

2

Dual

ENHANCEMENT MODE

900mW

3 ns

700mW

2 N-Channel (Dual)

SWITCHING

450m Ω @ 500mA, 4.5V

1.5V @ 250μA

50pF @ 10V

-

2.3nC @ 4.5V

8.5ns

-

13 ns

17 ns

680mA

800mV

8V

25V

25V

METAL-OXIDE SEMICONDUCTOR

Logic Level Gate

800 mV

1.1mm

3mm

1.7mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

450mOhm

2

150°C

LOGIC LEVEL COMPATIBLE

FDC6302P vs FDC6303N