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FDC655BN

Fairchild/ON Semiconductor FDC655BN

Part Number:
FDC655BN
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2478008-FDC655BN
Description:
MOSFET N-CH 30V 6.3A SSOT-6
ECAD Model:
Datasheet:
FDC655BN

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Specifications
Fairchild/ON Semiconductor FDC655BN technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDC655BN.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    13 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-23-6 Thin, TSOT-23-6
  • Number of Pins
    6
  • Weight
    36mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Resistance
    25MOhm
  • Additional Feature
    ULTRA-LOW RESISTANCE
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    30V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Current Rating
    6.3A
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    1.6W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.6W
  • Turn On Delay Time
    6 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    25m Ω @ 6.3A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    570pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    6.3A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    15nC @ 10V
  • Rise Time
    4ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    4 ns
  • Turn-Off Delay Time
    15 ns
  • Continuous Drain Current (ID)
    6.3A
  • Threshold Voltage
    1.9V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    30V
  • Max Junction Temperature (Tj)
    150°C
  • Nominal Vgs
    1.9 V
  • Feedback Cap-Max (Crss)
    90 pF
  • Height
    1.1mm
  • Length
    3mm
  • Width
    1.7mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDC655BN Description
FDC655BN is a type of N-Channel logic-level MOSFET provided by ON Semiconductor based on the advanced PowerTrench? process. It is able to minimize the on-state resistance while maintaining superior switching performance. Due to its specific characteristics and reliable performance, it is ideally suitable for low-voltage and battery-powered applications requiring low in-line power loss and fast switching.

FDC655BN Features
Low gate charge
Low RDS (on)
Low on-state resistance
Superior switching performance
Available in the SuperSOT-6 package

FDC655BN Applications
low-voltage and battery-powered applications
Uninterruptible power supplies
Synchronous rectification
FDC655BN More Descriptions
Transistor MOSFET N Channel 30 Volt 6.3 .6 Amp 6 Pin Supersot Tape and Reel
N-Channel PowerTrench® MOSFET, Logic Level, 30 V, 6.3 A, 25 mΩ
Temperature Sensors - NTC Thermistors Tape & Reel (TR) 0201 (0603 Metric) 1% 1 (Unlimited) 10k Surface Mount ±1% -40°C~125°C Thermistor NTC 10K Ohm 1% 2-Pin 0201 Surface Mount Solder Pad 3435K T/R
MOSFET, N CH, 30V, 6.3A, SUPERSOT; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.3A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.021ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V;
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimized on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Product Comparison
The three parts on the right have similar specifications to FDC655BN.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Max Junction Temperature (Tj)
    Nominal Vgs
    Feedback Cap-Max (Crss)
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    Termination
    Drain Current-Max (Abs) (ID)
    Dual Supply Voltage
    Radiation Hardening
    View Compare
  • FDC655BN
    FDC655BN
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    13 Weeks
    Tin
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    6
    36mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2006
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    25MOhm
    ULTRA-LOW RESISTANCE
    FET General Purpose Power
    30V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    NOT SPECIFIED
    6.3A
    NOT SPECIFIED
    Not Qualified
    1
    1
    1.6W Ta
    Single
    ENHANCEMENT MODE
    1.6W
    6 ns
    N-Channel
    SWITCHING
    25m Ω @ 6.3A, 10V
    3V @ 250μA
    570pF @ 15V
    6.3A Ta
    15nC @ 10V
    4ns
    4.5V 10V
    ±20V
    4 ns
    15 ns
    6.3A
    1.9V
    20V
    30V
    150°C
    1.9 V
    90 pF
    1.1mm
    3mm
    1.7mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
  • FDC602P_F095
    FDC602P_F095
    Fairchild/ON Semiconductor
    -
    -
    -
    -
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2008
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    1.6W Ta
    -
    -
    -
    -
    P-Channel
    -
    35mOhm @ 5.5A, 4.5V
    1.5V @ 250μA
    1456pF @ 10V
    5.5A Ta
    20nC @ 4.5V
    -
    2.5V 4.5V
    ±12V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    SuperSOT™-6
    20V
    -
    -
    -
    -
    FDC655BN vs FDC602P_F095
  • FDC653N
    FDC653N
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    10 Weeks
    Tin
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    6
    30mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    1997
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    35MOhm
    -
    FET General Purpose Power
    30V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    5A
    -
    -
    1
    1
    1.6W Ta
    Single
    ENHANCEMENT MODE
    1.6W
    7.5 ns
    N-Channel
    SWITCHING
    35m Ω @ 5A, 10V
    2V @ 250μA
    350pF @ 15V
    5A Ta
    17nC @ 10V
    12ns
    4.5V 10V
    ±20V
    12 ns
    13 ns
    5A
    1.7V
    20V
    30V
    150°C
    1.7 V
    -
    1.1mm
    3mm
    1.7mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    SMD/SMT
    5A
    30V
    No
    FDC655BN vs FDC653N
  • FDC642P
    FDC642P
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    13 Weeks
    Tin
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    6
    36mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2017
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    65mOhm
    -
    Other Transistors
    -20V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    NOT SPECIFIED
    -4A
    NOT SPECIFIED
    Not Qualified
    1
    -
    1.6W Ta
    Single
    ENHANCEMENT MODE
    1.6W
    6 ns
    P-Channel
    SWITCHING
    65m Ω @ 4A, 4.5V
    1.5V @ 250μA
    925pF @ 10V
    4A Ta
    16nC @ 4.5V
    7ns
    2.5V 4.5V
    ±8V
    7 ns
    120 ns
    4A
    -600mV
    8V
    -20V
    -
    -
    -
    1mm
    3mm
    1.7mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    20V
    -
    4A
    -
    -
    FDC655BN vs FDC642P
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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