Fairchild/ON Semiconductor FDC654P
- Part Number:
- FDC654P
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3070242-FDC654P
- Description:
- MOSFET P-CH 30V 3.6A SSOT-6
- ECAD Model:
-
- Datasheet:
- FDC654P
Fairchild/ON Semiconductor FDC654P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDC654P.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time10 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-23-6 Thin, TSOT-23-6
- Number of Pins6
- Weight36mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2017
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Resistance75MOhm
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-30V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating-3.6A
- Number of Elements1
- Power Dissipation-Max1.6W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.6W
- Turn On Delay Time6 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs75m Ω @ 3.6A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds298pF @ 15V
- Current - Continuous Drain (Id) @ 25°C3.6A Ta
- Gate Charge (Qg) (Max) @ Vgs9nC @ 10V
- Rise Time13ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)13 ns
- Turn-Off Delay Time11 ns
- Continuous Drain Current (ID)3.6A
- Threshold Voltage-1.9V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-30V
- Height1mm
- Length3mm
- Width1.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDC654P Description
FDC654P is a P-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 30V. The operating temperature of FDC654P is T-55°C~150°C TJ and its maximum power dissipation is 1.6W. This P-Channel Logic Level MOSFET is produced using ON Semiconductor’s advanced Power Trench process. It has been optimized for battery power management applications.
FDC654P Features
Low gate charge (6.2 nC typical)
High performance trench technology for extremely low RDS(ON)
–3.6 A, –30 V.
FDC654P Applications
Battery management
Load switch
Battery protection
FDC654P is a P-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 30V. The operating temperature of FDC654P is T-55°C~150°C TJ and its maximum power dissipation is 1.6W. This P-Channel Logic Level MOSFET is produced using ON Semiconductor’s advanced Power Trench process. It has been optimized for battery power management applications.
FDC654P Features
Low gate charge (6.2 nC typical)
High performance trench technology for extremely low RDS(ON)
–3.6 A, –30 V.
FDC654P Applications
Battery management
Load switch
Battery protection
FDC654P More Descriptions
P-Channel PowerTrench® MOSFET, Logic Level, -30V, -3.6A, 75mΩ
Automotive 300mA Low-Iq, High PSRR Low-Dropout (LDO) Regulator 5-SOT-23 -40 to 125
MOSFET, P-CH, -30V, -3.6A, SOT-23-6; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.6A; Source Voltage Vds:-30V; On Resistance
This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications.
Automotive 300mA Low-Iq, High PSRR Low-Dropout (LDO) Regulator 5-SOT-23 -40 to 125
MOSFET, P-CH, -30V, -3.6A, SOT-23-6; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.6A; Source Voltage Vds:-30V; On Resistance
This P-Channel Logic Level MOSFET is produced using Fairchild’s advanced PowerTrench process. It has been optimized for battery power management applications.
The three parts on the right have similar specifications to FDC654P.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormCurrent RatingNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageContact PlatingTerminationNumber of ChannelsDrain Current-Max (Abs) (ID)Dual Supply VoltageMax Junction Temperature (Tj)Nominal VgsPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Qualification StatusView Compare
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FDC654PACTIVE (Last Updated: 2 days ago)10 WeeksSurface MountSurface MountSOT-23-6 Thin, TSOT-23-6636mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2017e3yesActive1 (Unlimited)6EAR9975MOhmTin (Sn)Other Transistors-30VMOSFET (Metal Oxide)DUALGULL WING-3.6A11.6W TaSingleENHANCEMENT MODE1.6W6 nsP-ChannelSWITCHING75m Ω @ 3.6A, 10V3V @ 250μA298pF @ 15V3.6A Ta9nC @ 10V13ns30V4.5V 10V±20V13 ns11 ns3.6A-1.9V20V-30V1mm3mm1.7mmNo SVHCNoROHS3 CompliantLead Free------------ -
---Surface MountSOT-23-6 Thin, TSOT-23-6----55°C~150°C TJTape & Reel (TR)PowerTrench®2008--Obsolete1 (Unlimited)------MOSFET (Metal Oxide)----1.6W Ta----P-Channel-35mOhm @ 5.5A, 4.5V1.5V @ 250μA1456pF @ 10V5.5A Ta20nC @ 4.5V-20V2.5V 4.5V±12V-------------SuperSOT™-6----------
-
ACTIVE (Last Updated: 2 days ago)10 WeeksSurface MountSurface MountSOT-23-6 Thin, TSOT-23-6630mgSILICON-55°C~150°C TJTape & Reel (TR)-1997e3yesActive1 (Unlimited)6EAR9935MOhm-FET General Purpose Power30VMOSFET (Metal Oxide)DUALGULL WING5A11.6W TaSingleENHANCEMENT MODE1.6W7.5 nsN-ChannelSWITCHING35m Ω @ 5A, 10V2V @ 250μA350pF @ 15V5A Ta17nC @ 10V12ns-4.5V 10V±20V12 ns13 ns5A1.7V20V30V1.1mm3mm1.7mmNo SVHCNoROHS3 CompliantLead Free-TinSMD/SMT15A30V150°C1.7 V---
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ACTIVE (Last Updated: 2 days ago)13 WeeksSurface MountSurface MountSOT-23-6 Thin, TSOT-23-6636mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2017e3yesActive1 (Unlimited)6EAR9965mOhm-Other Transistors-20VMOSFET (Metal Oxide)DUALGULL WING-4A11.6W TaSingleENHANCEMENT MODE1.6W6 nsP-ChannelSWITCHING65m Ω @ 4A, 4.5V1.5V @ 250μA925pF @ 10V4A Ta16nC @ 4.5V7ns20V2.5V 4.5V±8V7 ns120 ns4A-600mV8V-20V1mm3mm1.7mmNo SVHC-ROHS3 CompliantLead Free-Tin--4A---NOT SPECIFIEDNOT SPECIFIEDNot Qualified
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