Fairchild/ON Semiconductor FDC604P
- Part Number:
- FDC604P
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2481781-FDC604P
- Description:
- MOSFET P-CH 20V 5.5A SSOT-6
- Datasheet:
- FDC604P
Fairchild/ON Semiconductor FDC604P technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDC604P.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time10 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-23-6 Thin, TSOT-23-6
- Number of Pins6
- Weight36mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2001
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Resistance33MOhm
- SubcategoryOther Transistors
- Voltage - Rated DC-20V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating-5.5A
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max1.6W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.6W
- Turn On Delay Time13 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs33m Ω @ 5.5A, 4.5V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1926pF @ 10V
- Current - Continuous Drain (Id) @ 25°C5.5A Ta
- Gate Charge (Qg) (Max) @ Vgs30nC @ 4.5V
- Rise Time11ns
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)11 ns
- Turn-Off Delay Time90 ns
- Continuous Drain Current (ID)-5.5A
- Threshold Voltage-700mV
- Gate to Source Voltage (Vgs)8V
- Drain to Source Breakdown Voltage-20V
- Max Junction Temperature (Tj)150°C
- Nominal Vgs-700 mV
- Height1.1mm
- Length3mm
- Width1.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDC604P Description
FDC604P is a P-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 20V. The operating temperature of the FDC604P is -55°C~150°C TJ and its maximum power dissipation is 1.6W Ta. FDC604P has 6 pins and it is available in Tape & Reel (TR) packaging way. This P-Channel 1.8V specified MOSFET uses a low voltage PowerTrench process. It has been optimized for battery power management applications.
FDC604P Features
-5.5 A, -20 V
RDS(on) = 33 mΩ @ VGS = -4.5V
RDS(on) = 43 mΩ @ VGS = -2.5V
RDS(on) = 60 mΩ @ VGS = -1.8V
Fast switching speed
High performance trench technology for extremelylow RDS(ON)
FDC604P Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
FDC604P is a P-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 20V. The operating temperature of the FDC604P is -55°C~150°C TJ and its maximum power dissipation is 1.6W Ta. FDC604P has 6 pins and it is available in Tape & Reel (TR) packaging way. This P-Channel 1.8V specified MOSFET uses a low voltage PowerTrench process. It has been optimized for battery power management applications.
FDC604P Features
-5.5 A, -20 V
RDS(on) = 33 mΩ @ VGS = -4.5V
RDS(on) = 43 mΩ @ VGS = -2.5V
RDS(on) = 60 mΩ @ VGS = -1.8V
Fast switching speed
High performance trench technology for extremelylow RDS(ON)
FDC604P Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
FDC604P More Descriptions
P-Channel PowerTrench® MOSFET, 1.8V Specified, -20V, -5.5A, 33mΩ
In a Pack of 10, P-Channel MOSFET, 5.5 A, 20 V, 6-Pin SOT-23 ON Semiconductor FDC604P
Chip Resistor - Surface Mount 75Ohm 1206 (3216 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 75 OHM 1% 1/4W 1206
This P-Channel 1.8V specified MOSFET uses Fairchild's low voltage PowerTrench process. It has been optimized for battery power management applications.
Transistor Polarity:p Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:5.5A; On Resistance Rds(On):0.033Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700Mv Rohs Compliant: Yes
MOSFET, P, SUPERSOT-6; Transistor Polarity:P Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.033ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-700mV; Power Dissipation Pd:1.6W; Transistor Case Style:SuperSOT; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:-5.5A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to 150°C; Pulse Current Idm:20A; SMD Marking:FDC604P; Uni / Bi Directional Polarity:P; Voltage Vds:20V; Voltage Vds Typ:-20V; Voltage Vgs Max:-700mV; Voltage Vgs Rds on Measurement:-4.5V; Voltage Vgs th Max:-1.5V
In a Pack of 10, P-Channel MOSFET, 5.5 A, 20 V, 6-Pin SOT-23 ON Semiconductor FDC604P
Chip Resistor - Surface Mount 75Ohm 1206 (3216 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 75 OHM 1% 1/4W 1206
This P-Channel 1.8V specified MOSFET uses Fairchild's low voltage PowerTrench process. It has been optimized for battery power management applications.
Transistor Polarity:p Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:5.5A; On Resistance Rds(On):0.033Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700Mv Rohs Compliant: Yes
MOSFET, P, SUPERSOT-6; Transistor Polarity:P Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.033ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-700mV; Power Dissipation Pd:1.6W; Transistor Case Style:SuperSOT; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:-5.5A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to 150°C; Pulse Current Idm:20A; SMD Marking:FDC604P; Uni / Bi Directional Polarity:P; Voltage Vds:20V; Voltage Vds Typ:-20V; Voltage Vgs Max:-700mV; Voltage Vgs Rds on Measurement:-4.5V; Voltage Vgs th Max:-1.5V
The three parts on the right have similar specifications to FDC604P.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormCurrent RatingNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageMax Junction Temperature (Tj)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageTerminationDrain Current-Max (Abs) (ID)Dual Supply VoltagePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Qualification StatusView Compare
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FDC604PACTIVE (Last Updated: 1 day ago)10 WeeksTinSurface MountSurface MountSOT-23-6 Thin, TSOT-23-6636mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2001e3yesActive1 (Unlimited)6EAR9933MOhmOther Transistors-20VMOSFET (Metal Oxide)DUALGULL WING-5.5A111.6W TaSingleENHANCEMENT MODE1.6W13 nsP-ChannelSWITCHING33m Ω @ 5.5A, 4.5V1.5V @ 250μA1926pF @ 10V5.5A Ta30nC @ 4.5V11ns20V1.8V 4.5V±8V11 ns90 ns-5.5A-700mV8V-20V150°C-700 mV1.1mm3mm1.7mmNo SVHCNoROHS3 CompliantLead Free--------
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----Surface MountSOT-23-6 Thin, TSOT-23-6----55°C~150°C TJTape & Reel (TR)PowerTrench®2008--Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)-----1.6W Ta----P-Channel-35mOhm @ 5.5A, 4.5V1.5V @ 250μA1456pF @ 10V5.5A Ta20nC @ 4.5V-20V2.5V 4.5V±12V---------------SuperSOT™-6------
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ACTIVE (Last Updated: 2 days ago)10 WeeksTinSurface MountSurface MountSOT-23-6 Thin, TSOT-23-6630mgSILICON-55°C~150°C TJTape & Reel (TR)-1997e3yesActive1 (Unlimited)6EAR9935MOhmFET General Purpose Power30VMOSFET (Metal Oxide)DUALGULL WING5A111.6W TaSingleENHANCEMENT MODE1.6W7.5 nsN-ChannelSWITCHING35m Ω @ 5A, 10V2V @ 250μA350pF @ 15V5A Ta17nC @ 10V12ns-4.5V 10V±20V12 ns13 ns5A1.7V20V30V150°C1.7 V1.1mm3mm1.7mmNo SVHCNoROHS3 CompliantLead Free-SMD/SMT5A30V---
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ACTIVE (Last Updated: 2 days ago)13 WeeksTinSurface MountSurface MountSOT-23-6 Thin, TSOT-23-6636mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2017e3yesActive1 (Unlimited)6EAR9965mOhmOther Transistors-20VMOSFET (Metal Oxide)DUALGULL WING-4A1-1.6W TaSingleENHANCEMENT MODE1.6W6 nsP-ChannelSWITCHING65m Ω @ 4A, 4.5V1.5V @ 250μA925pF @ 10V4A Ta16nC @ 4.5V7ns20V2.5V 4.5V±8V7 ns120 ns4A-600mV8V-20V--1mm3mm1.7mmNo SVHC-ROHS3 CompliantLead Free--4A-NOT SPECIFIEDNOT SPECIFIEDNot Qualified
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