Fairchild/ON Semiconductor FDB8030L

Name: FDB8030L
Brand: Fairchild/ON Semiconductor
SKU: 2848834-FDB8030L
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDB8030L

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2848834-FDB8030L

Description:: MOSFET N-CH 30V 80A D2PAK

ECAD Model:

Datasheet:: FDB8030L

Specifications

Fairchild/ON Semiconductor FDB8030L technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDB8030L.

Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Weight
1.31247g
Transistor Element Material
SILICON
Operating Temperature
-65°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2017
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
3.5MOhm
Additional Feature
LOGIC LEVEL COMPATIBLE
Subcategory
FET General Purpose Power
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Current Rating
80A
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
187W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
187W
Case Connection
DRAIN
Turn On Delay Time
20 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3.5m Ω @ 80A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
10500pF @ 15V
Current - Continuous Drain (Id) @ 25°C
80A Ta
Gate Charge (Qg) (Max) @ Vgs
170nC @ 5V
Rise Time
185ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
200 ns
Turn-Off Delay Time
160 ns
Continuous Drain Current (ID)
80A
Threshold Voltage
1.5V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Nominal Vgs
1.5 V
Height
4.83mm
Length
10.97mm
Width
9.65mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDB8030L Description
The FDB8030L is a logic level N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It features faster switching and a lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies) and DC-to-DC power supply designs with higher overall efficiency. The rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.

FDB8030L Features
80 A, 30 V. RDS(ON) = 0.0035 ? @ VGS = 10 V
RDS(ON) = 0.0045 ? @ VGS = 4.5 V Critical DC electrical parameters specified at elevated temperature
Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor
High performance trench technology for extremely low RDS(ON)
175°C maximum junction temperature rating

FDB8030L Applications
Induction furnaces
Arc furnaces and arc welders
Steel rolling mills
Large motors with periodic loading
Thyristor drives
Railway traction which is mostly through d.c. drives
Industrial

FDB8030L More Descriptions

N-Channel PowerTrench® MOSFET, Logic Level, 30V, 80A , 4.5mΩ
Trans MOSFET N-CH 30V 80A 3-Pin(2 Tab) D2PAK T/R - Tape and Reel
Power Field-Effect Transistor, 80A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CH, 30V, 80A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0031ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:187W; Operating Temperature Min:-65°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
This N-Channel Logic level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETS feature faster switching and lower gate charge than other MOSFETS with comparable RDS(on) specifications. The result is a MOSFET that is easy and safer to drive(even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Product Comparison

The three parts on the right have similar specifications to FDB8030L.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Terminal Form

Current Rating

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

HTS Code

Pin Count

Surface Mount

Terminal Finish

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Configuration

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Supplier Device Package

View Compare
FDB8030L

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

15 Weeks

Tin

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

1.31247g

SILICON

-65°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

2017

e3

yes

Obsolete

1 (Unlimited)

2

EAR99

3.5MOhm

LOGIC LEVEL COMPATIBLE

FET General Purpose Power

30V

MOSFET (Metal Oxide)

GULL WING

80A

R-PSSO-G2

1

187W Tc

Single

ENHANCEMENT MODE

187W

DRAIN

20 ns

N-Channel

SWITCHING

3.5m Ω @ 80A, 10V

2V @ 250μA

10500pF @ 15V

80A Ta

170nC @ 5V

185ns

4.5V 10V

±20V

200 ns

160 ns

80A

1.5V

20V

30V

1.5 V

4.83mm

10.97mm

9.65mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDB86566_F085

Fairchild/ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

yes

-

-

-

EAR99

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

8541.29.00.95

2

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FDB8030L vs FDB86566_F085
FDB8876

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

-

e3

yes

Obsolete

1 (Unlimited)

2

-

-

-

-

-

MOSFET (Metal Oxide)

GULL WING

-

R-PSSO-G2

1

70W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

8.5m Ω @ 40A, 10V

2.5V @ 250μA

1.7pF @ 15V

71A Tc

45nC @ 10V

-

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

3

YES

MATTE TIN

SINGLE

260

unknown

NOT SPECIFIED

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

30V

71A

0.0103Ohm

30V

180 mJ

-

FDB8030L vs FDB8876
FDB8444TS

Fairchild/ON Semiconductor

-

-

-

-

Surface Mount

TO-263-5, D2Pak (4 Leads Tab), TO-263BB

-

-

-

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

181W Tc

-

-

-

-

-

N-Channel

-

5mOhm @ 70A, 10V

4V @ 250μA

8.41pF @ 25V

20A Ta 70A Tc

338nC @ 20V

-

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

40V

-

-

-

-

TO-263-5

FDB8030L vs FDB8444TS