Fairchild/ON Semiconductor FDB8878

Name: FDB8878
Brand: Fairchild/ON Semiconductor
SKU: 2490659-FDB8878
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDB8878

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2490659-FDB8878

Description:: MOSFET N-CH 30V 48A D2PAK

ECAD Model:

Datasheet:: FDB8878

Specifications

Fairchild/ON Semiconductor FDB8878 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDB8878.

Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
MATTE TIN
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSSO-G2
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
47.3W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
14m Ω @ 40A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1.235pF @ 15V
Current - Continuous Drain (Id) @ 25°C
48A Tc
Gate Charge (Qg) (Max) @ Vgs
23nC @ 10V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
48A
Drain-source On Resistance-Max
0.014Ohm
Pulsed Drain Current-Max (IDM)
170A
DS Breakdown Voltage-Min
30V
Avalanche Energy Rating (Eas)
60 mJ
RoHS Status
ROHS3 Compliant

Description

FDB8878 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 60 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1.235pF @ 15V.A device's drain current is its maximum continuous current, and this device's drain current is 48A.A maximum pulsed drain current of 170A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 30V.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

FDB8878 Features
the avalanche energy rating (Eas) is 60 mJ
based on its rated peak drain current 170A.
a 30V drain to source voltage (Vdss)

FDB8878 Applications
There are a lot of Rochester Electronics, LLC
FDB8878 applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

FDB8878 More Descriptions

30V,48A, 14 OHM NCH LOGIC LEVEL POWER TRENCH MOSFET
TRANS MOSFET N-CH 30V 48A 3PIN TO-263AB
MOSFETs 30V N-Ch PowerTrench MOSFET
Chip Resistor - Surface Mount 100Ohm 0603 (1608 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 100 OHM 1% 1/10W 0603

Product Comparison

The three parts on the right have similar specifications to FDB8878.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

ECCN Code

HTS Code

Lifecycle Status

Factory Lead Time

Mount

Number of Pins

Weight

Published

Additional Feature

Subcategory

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

View Compare
FDB8878

Fairchild/ON Semiconductor

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

e3

yes

Obsolete

1 (Unlimited)

2

MATTE TIN

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

unknown

NOT SPECIFIED

3

R-PSSO-G2

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

47.3W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

14m Ω @ 40A, 10V

2.5V @ 250μA

1.235pF @ 15V

48A Tc

23nC @ 10V

30V

4.5V 10V

±20V

48A

0.014Ohm

170A

30V

60 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDB86566_F085

Fairchild/ON Semiconductor

-

-

-

-

-

-

-

-

yes

-

-

-

-

-

-

-

-

-

-

2

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

EAR99

8541.29.00.95

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FDB8878 vs FDB86566_F085
FDB86135

Fairchild/ON Semiconductor

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

e3

yes

Active

1 (Unlimited)

2

Tin (Sn)

MOSFET (Metal Oxide)

-

GULL WING

245

-

30

-

R-PSSO-G2

-

1

-

2.4W Ta 227W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

3.5m Ω @ 75A, 10V

4V @ 250μA

7295pF @ 25V

75A Tc

116nC @ 10V

-

10V

±20V

120A

-

704A

-

658 mJ

ROHS3 Compliant

EAR99

8541.29.00.95

ACTIVE (Last Updated: 1 day ago)

8 Weeks

Surface Mount

3

1.31247g

2017

ULTRA LOW-ON RESISTANCE

FET General Purpose Power

Single

227W

22 ns

54ns

11 ns

37 ns

75A

2V

20V

100V

4.83mm

10.67mm

9.65mm

No SVHC

No

FDB8878 vs FDB86135
FDB8876

Fairchild/ON Semiconductor

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

e3

yes

Obsolete

1 (Unlimited)

2

MATTE TIN

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

unknown

NOT SPECIFIED

3

R-PSSO-G2

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

70W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

8.5m Ω @ 40A, 10V

2.5V @ 250μA

1.7pF @ 15V

71A Tc

45nC @ 10V

30V

4.5V 10V

±20V

71A

0.0103Ohm

-

30V

180 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

FDB8878 vs FDB8876