FDB075N15A

Fairchild/ON Semiconductor FDB075N15A

Part Number:
FDB075N15A
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2478438-FDB075N15A
Description:
MOSFET N-CH 150V 130A D2PAK
ECAD Model:
Datasheet:
FDB075N15A

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Specifications
Fairchild/ON Semiconductor FDB075N15A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDB075N15A.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    12 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Weight
    1.31247g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2013
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Additional Feature
    ULTRA-LOW RESISTANCE
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    333W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    333W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    28 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    7.5m Ω @ 100A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    7350pF @ 75V
  • Current - Continuous Drain (Id) @ 25°C
    130A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    100nC @ 10V
  • Rise Time
    37ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    21 ns
  • Turn-Off Delay Time
    62 ns
  • Continuous Drain Current (ID)
    130A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.0075Ohm
  • Drain to Source Breakdown Voltage
    150V
  • Pulsed Drain Current-Max (IDM)
    522A
  • Avalanche Energy Rating (Eas)
    588 mJ
  • Height
    4.83mm
  • Length
    10.67mm
  • Width
    9.65mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDB075N15A Description
FDB075N15A N-Channel MOSFET is tailored to minimize the on-state resistance and yet maintain superior switching performance. FDB075N15A MOSFET provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. FDB075N15A ON Semiconductor is used in AC-DC Merchant Power Supply, Desktop PC, Uninterruptible Power Supply, Other Data Processing, Electric Bike.     FDB075N15A Features   Fast Switching Low Gate Charge, QG = 77nC ( Typ.) High Performance Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability RoHS Compliant     FDB075N15A Applications   AC-DC Merchant Power Supply Desktop PC Uninterruptible Power Supply Other Data Processing Electric Bike
FDB075N15A More Descriptions
N-Channel PowerTrench® MOSFET 150V, 130A, 7.5mΩ
N CH MOSFET, POWERTRENCH, 150V, 130A, D2PAK - More Details
Trans MOSFET N-CH 150V 130A 3-Pin(2 Tab) D2PAK T/R - Product that comes on tape, but is not reeled (
MOSFET, N-CH, 150V, 130A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Source Voltage Vds:150V; On Resistance
Power Field-Effect Transistor, 120A I(D), 150V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
MOSFET, N-CH, 150V, 130A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 130A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.00625ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 333W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
Product Comparison
The three parts on the right have similar specifications to FDB075N15A.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Additional Feature
    Subcategory
    Technology
    Terminal Form
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Finish
    HTS Code
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Drain to Source Voltage (Vdss)
    Threshold Voltage
    REACH SVHC
    Resistance
    View Compare
  • FDB075N15A
    FDB075N15A
    ACTIVE (Last Updated: 4 days ago)
    12 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    1.31247g
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2013
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    ULTRA-LOW RESISTANCE
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    R-PSSO-G2
    1
    333W Tc
    Single
    ENHANCEMENT MODE
    333W
    DRAIN
    28 ns
    N-Channel
    SWITCHING
    7.5m Ω @ 100A, 10V
    4V @ 250μA
    7350pF @ 75V
    130A Tc
    100nC @ 10V
    37ns
    10V
    ±20V
    21 ns
    62 ns
    130A
    20V
    0.0075Ohm
    150V
    522A
    588 mJ
    4.83mm
    10.67mm
    9.65mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDB0170N607L
    ACTIVE (Last Updated: 4 days ago)
    16 Weeks
    -
    Surface Mount
    Surface Mount
    TO-263-7, D2Pak (6 Leads Tab)
    -
    1.312g
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e3
    yes
    Active
    1 (Unlimited)
    -
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    3.8W Ta 250W Tc
    Single
    -
    -
    -
    -
    N-Channel
    -
    1.4m Ω @ 39A, 10V
    4V @ 250μA
    19250pF @ 30V
    300A Tc
    243nC @ 10V
    -
    10V
    ±20V
    -
    -
    300A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    Tin (Sn)
    8541.29.00.95
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    60V
    -
    -
    -
  • FDB024N04AL7
    ACTIVE (Last Updated: 4 days ago)
    16 Weeks
    -
    Surface Mount
    Surface Mount
    TO-263-7, D2Pak (6 Leads Tab)
    7
    1.312g
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    ULTRA-LOW RESISTANCE
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    R-PSSO-G6
    1
    214W Tc
    Single
    ENHANCEMENT MODE
    214W
    DRAIN
    17 ns
    N-Channel
    SWITCHING
    2.4m Ω @ 80A, 10V
    3V @ 250μA
    7300pF @ 25V
    100A Tc
    109nC @ 10V
    8ns
    10V
    ±20V
    17 ns
    71 ns
    219A
    20V
    0.0024Ohm
    40V
    -
    864 mJ
    9.4mm
    10.8mm
    4.3mm
    No
    ROHS3 Compliant
    -
    Tin (Sn)
    -
    -
    -
    -
    -
    1V
    No SVHC
    -
  • FDB031N08
    ACTIVE (Last Updated: 4 days ago)
    8 Weeks
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    1.762g
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    R-PSSO-G2
    1
    375W Tc
    Single
    ENHANCEMENT MODE
    375W
    DRAIN
    230 ns
    N-Channel
    SWITCHING
    3.1m Ω @ 75A, 10V
    4.5V @ 250μA
    15160pF @ 25V
    120A Tc
    220nC @ 10V
    191ns
    10V
    ±20V
    121 ns
    335 ns
    235A
    20V
    -
    75V
    940A
    -
    4.83mm
    10.67mm
    11.33mm
    No
    ROHS3 Compliant
    Lead Free
    Tin (Sn)
    -
    -
    -
    -
    -
    -
    -
    3.1MOhm
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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