Fairchild/ON Semiconductor FDB075N15A
- Part Number:
- FDB075N15A
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2478438-FDB075N15A
- Description:
- MOSFET N-CH 150V 130A D2PAK
- Datasheet:
- FDB075N15A
Fairchild/ON Semiconductor FDB075N15A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDB075N15A.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time12 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Weight1.31247g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Additional FeatureULTRA-LOW RESISTANCE
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Power Dissipation-Max333W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation333W
- Case ConnectionDRAIN
- Turn On Delay Time28 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs7.5m Ω @ 100A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds7350pF @ 75V
- Current - Continuous Drain (Id) @ 25°C130A Tc
- Gate Charge (Qg) (Max) @ Vgs100nC @ 10V
- Rise Time37ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)21 ns
- Turn-Off Delay Time62 ns
- Continuous Drain Current (ID)130A
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.0075Ohm
- Drain to Source Breakdown Voltage150V
- Pulsed Drain Current-Max (IDM)522A
- Avalanche Energy Rating (Eas)588 mJ
- Height4.83mm
- Length10.67mm
- Width9.65mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDB075N15A Description
FDB075N15A N-Channel MOSFET is tailored to minimize the on-state resistance and yet maintain superior switching performance. FDB075N15A MOSFET provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. FDB075N15A ON Semiconductor is used in AC-DC Merchant Power Supply, Desktop PC, Uninterruptible Power Supply, Other Data Processing, Electric Bike. FDB075N15A Features Fast Switching Low Gate Charge, QG = 77nC ( Typ.) High Performance Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability RoHS Compliant FDB075N15A Applications AC-DC Merchant Power Supply Desktop PC Uninterruptible Power Supply Other Data Processing Electric Bike
FDB075N15A N-Channel MOSFET is tailored to minimize the on-state resistance and yet maintain superior switching performance. FDB075N15A MOSFET provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. FDB075N15A ON Semiconductor is used in AC-DC Merchant Power Supply, Desktop PC, Uninterruptible Power Supply, Other Data Processing, Electric Bike. FDB075N15A Features Fast Switching Low Gate Charge, QG = 77nC ( Typ.) High Performance Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability RoHS Compliant FDB075N15A Applications AC-DC Merchant Power Supply Desktop PC Uninterruptible Power Supply Other Data Processing Electric Bike
FDB075N15A More Descriptions
N-Channel PowerTrench® MOSFET 150V, 130A, 7.5mΩ
N CH MOSFET, POWERTRENCH, 150V, 130A, D2PAK - More Details
Trans MOSFET N-CH 150V 130A 3-Pin(2 Tab) D2PAK T/R - Product that comes on tape, but is not reeled (
MOSFET, N-CH, 150V, 130A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Source Voltage Vds:150V; On Resistance
Power Field-Effect Transistor, 120A I(D), 150V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
MOSFET, N-CH, 150V, 130A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 130A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.00625ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 333W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
N CH MOSFET, POWERTRENCH, 150V, 130A, D2PAK - More Details
Trans MOSFET N-CH 150V 130A 3-Pin(2 Tab) D2PAK T/R - Product that comes on tape, but is not reeled (
MOSFET, N-CH, 150V, 130A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Source Voltage Vds:150V; On Resistance
Power Field-Effect Transistor, 120A I(D), 150V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
MOSFET, N-CH, 150V, 130A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 130A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.00625ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 333W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
The three parts on the right have similar specifications to FDB075N15A.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureSubcategoryTechnologyTerminal FormJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)HeightLengthWidthRadiation HardeningRoHS StatusLead FreeTerminal FinishHTS CodePeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Drain to Source Voltage (Vdss)Threshold VoltageREACH SVHCResistanceView Compare
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FDB075N15AACTIVE (Last Updated: 4 days ago)12 WeeksTinSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB31.31247gSILICON-55°C~175°C TJTape & Reel (TR)PowerTrench®2013e3yesActive1 (Unlimited)2EAR99ULTRA-LOW RESISTANCEFET General Purpose PowerMOSFET (Metal Oxide)GULL WINGR-PSSO-G21333W TcSingleENHANCEMENT MODE333WDRAIN28 nsN-ChannelSWITCHING7.5m Ω @ 100A, 10V4V @ 250μA7350pF @ 75V130A Tc100nC @ 10V37ns10V±20V21 ns62 ns130A20V0.0075Ohm150V522A588 mJ4.83mm10.67mm9.65mmNoROHS3 CompliantLead Free----------
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ACTIVE (Last Updated: 4 days ago)16 Weeks-Surface MountSurface MountTO-263-7, D2Pak (6 Leads Tab)-1.312g--55°C~175°C TJTape & Reel (TR)PowerTrench®-e3yesActive1 (Unlimited)-EAR99--MOSFET (Metal Oxide)---3.8W Ta 250W TcSingle----N-Channel-1.4m Ω @ 39A, 10V4V @ 250μA19250pF @ 30V300A Tc243nC @ 10V-10V±20V--300A---------ROHS3 Compliant-Tin (Sn)8541.29.00.95NOT SPECIFIEDnot_compliantNOT SPECIFIED60V---
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ACTIVE (Last Updated: 4 days ago)16 Weeks-Surface MountSurface MountTO-263-7, D2Pak (6 Leads Tab)71.312gSILICON-55°C~175°C TJTape & Reel (TR)PowerTrench®-e3yesActive1 (Unlimited)6EAR99ULTRA-LOW RESISTANCEFET General Purpose PowerMOSFET (Metal Oxide)GULL WINGR-PSSO-G61214W TcSingleENHANCEMENT MODE214WDRAIN17 nsN-ChannelSWITCHING2.4m Ω @ 80A, 10V3V @ 250μA7300pF @ 25V100A Tc109nC @ 10V8ns10V±20V17 ns71 ns219A20V0.0024Ohm40V-864 mJ9.4mm10.8mm4.3mmNoROHS3 Compliant-Tin (Sn)-----1VNo SVHC-
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ACTIVE (Last Updated: 4 days ago)8 Weeks-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB31.762gSILICON-55°C~175°C TJTape & Reel (TR)PowerTrench®-e3yesActive1 (Unlimited)2EAR99-FET General Purpose PowerMOSFET (Metal Oxide)GULL WINGR-PSSO-G21375W TcSingleENHANCEMENT MODE375WDRAIN230 nsN-ChannelSWITCHING3.1m Ω @ 75A, 10V4.5V @ 250μA15160pF @ 25V120A Tc220nC @ 10V191ns10V±20V121 ns335 ns235A20V-75V940A-4.83mm10.67mm11.33mmNoROHS3 CompliantLead FreeTin (Sn)-------3.1MOhm
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