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FDB070AN06A0

Fairchild/ON Semiconductor FDB070AN06A0

Part Number:
FDB070AN06A0
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2482025-FDB070AN06A0
Description:
MOSFET N-CH 60V 80A TO-263AB
ECAD Model:
Datasheet:
FDB070AN06A0

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Specifications
Fairchild/ON Semiconductor FDB070AN06A0 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDB070AN06A0.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    8 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Weight
    1.31247g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2003
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    7MOhm
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    60V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Current Rating
    80A
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    175W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    175W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    12 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    7m Ω @ 80A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    3000pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    15A Ta 80A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    66nC @ 10V
  • Rise Time
    159ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    35 ns
  • Turn-Off Delay Time
    27 ns
  • Continuous Drain Current (ID)
    80A
  • Threshold Voltage
    4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    60V
  • Dual Supply Voltage
    60V
  • Nominal Vgs
    4 V
  • Height
    4.83mm
  • Length
    10.67mm
  • Width
    11.33mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDB070AN06A0 Description
FDB070AN06A0 is a 60V N-Channel PowerTrench? MOSFET. The latest shielded gate PowerTrench? MOSFET FDB070AN06A0, which combines a smaller QSYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification. The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor FDB070AN06A0 is in the SC-70-3 package with 175W power dissipation.

FDB070AN06A0 Features
RDS(on) = 6.1m? (Typ.) @ VGS = 10V, ID = 80A
QG(tot) = 51nC (Typ.) @ VGS = 10V
Low Miller Charge
Low Qrr Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)

FDB070AN06A0 Applications
Synchronous Rectification for ATX 
Server 
Telecom PSU
Battery Protection Circuit
Motor Drives and Uninterruptible Power Supplies
FDB070AN06A0 More Descriptions
N-Channel 60 V 7 mOhm Surface Mount PowerTrench Mosfet D2PAK-3
N-Channel PowerTrench® MOSFET 60V, 80A, 7mΩ
Trans MOSFET N-CH 60V 80A 3-Pin(2 Tab) D2PAK T/R - Tape and Reel
Power Field-Effect Transistor, 15A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:60V; On Resistance Rds(on):6.1mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:175W; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-263; Power Dissipation Pd:175W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to FDB070AN06A0.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Current Rating
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Pulsed Drain Current-Max (IDM)
    Contact Plating
    Drain Current-Max (Abs) (ID)
    Avalanche Energy Rating (Eas)
    Drain-source On Resistance-Max
    View Compare
  • FDB070AN06A0
    FDB070AN06A0
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    8 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    1.31247g
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2003
    e3
    yes
    Active
    1 (Unlimited)
    2
    SMD/SMT
    EAR99
    7MOhm
    Tin (Sn)
    FET General Purpose Power
    60V
    MOSFET (Metal Oxide)
    GULL WING
    80A
    R-PSSO-G2
    1
    175W Tc
    Single
    ENHANCEMENT MODE
    175W
    DRAIN
    12 ns
    N-Channel
    SWITCHING
    7m Ω @ 80A, 10V
    4V @ 250μA
    3000pF @ 25V
    15A Ta 80A Tc
    66nC @ 10V
    159ns
    10V
    ±20V
    35 ns
    27 ns
    80A
    4V
    20V
    60V
    60V
    4 V
    4.83mm
    10.67mm
    11.33mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
  • FDB031N08
    FDB031N08
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    8 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    1.762g
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e3
    yes
    Active
    1 (Unlimited)
    2
    -
    EAR99
    3.1MOhm
    Tin (Sn)
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    GULL WING
    -
    R-PSSO-G2
    1
    375W Tc
    Single
    ENHANCEMENT MODE
    375W
    DRAIN
    230 ns
    N-Channel
    SWITCHING
    3.1m Ω @ 75A, 10V
    4.5V @ 250μA
    15160pF @ 25V
    120A Tc
    220nC @ 10V
    191ns
    10V
    ±20V
    121 ns
    335 ns
    235A
    -
    20V
    75V
    -
    -
    4.83mm
    10.67mm
    11.33mm
    -
    No
    ROHS3 Compliant
    Lead Free
    940A
    -
    -
    -
    -
    FDB070AN06A0 vs FDB031N08
  • FDB035AN06A0
    FDB035AN06A0
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    8 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    1.31247g
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2002
    e3
    yes
    Active
    1 (Unlimited)
    2
    -
    EAR99
    3.5MOhm
    -
    FET General Purpose Power
    60V
    MOSFET (Metal Oxide)
    GULL WING
    80A
    R-PSSO-G2
    1
    310W Tc
    Single
    ENHANCEMENT MODE
    310W
    DRAIN
    15 ns
    N-Channel
    SWITCHING
    3.5m Ω @ 80A, 10V
    4V @ 250μA
    6400pF @ 25V
    22A Ta 80A Tc
    124nC @ 10V
    93ns
    6V 10V
    ±20V
    13 ns
    38 ns
    80A
    4V
    20V
    60V
    -
    -
    4.83mm
    10.67mm
    11.33mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    Tin
    22A
    625 mJ
    -
    FDB070AN06A0 vs FDB035AN06A0
  • FDB088N08
    FDB088N08
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    8 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    1.31247g
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2004
    e3
    yes
    Active
    1 (Unlimited)
    2
    -
    EAR99
    -
    Tin (Sn)
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    GULL WING
    -
    R-PSSO-G2
    1
    160W Tc
    Single
    ENHANCEMENT MODE
    160W
    DRAIN
    45 ns
    N-Channel
    SWITCHING
    8.8m Ω @ 75A, 10V
    4V @ 250μA
    6595pF @ 25V
    120A Tc
    118nC @ 10V
    158ns
    10V
    ±20V
    102 ns
    244 ns
    120A
    2V
    20V
    75V
    -
    -
    4.83mm
    10.67mm
    11.33mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    85A
    -
    0.0088Ohm
    FDB070AN06A0 vs FDB088N08
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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