Fairchild/ON Semiconductor FDA59N25

Name: FDA59N25
Brand: Fairchild/ON Semiconductor
SKU: 2479423-FDA59N25
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDA59N25

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2479423-FDA59N25

Description:: MOSFET N-CH 250V 59A TO-3P

ECAD Model:

Datasheet:: FDA59N25

Specifications

Fairchild/ON Semiconductor FDA59N25 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDA59N25.

Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Factory Lead Time
7 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Number of Pins
3
Weight
6.401g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
UniFET™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
FAST SWITCHING
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Power Dissipation-Max
392W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
392W
Turn On Delay Time
70 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
49m Ω @ 29.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
4020pF @ 25V
Current - Continuous Drain (Id) @ 25°C
59A Tc
Gate Charge (Qg) (Max) @ Vgs
82nC @ 10V
Rise Time
480ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
170 ns
Turn-Off Delay Time
90 ns
Continuous Drain Current (ID)
59A
Threshold Voltage
5V
Gate to Source Voltage (Vgs)
30V
Drain-source On Resistance-Max
0.049Ohm
Drain to Source Breakdown Voltage
250V
Nominal Vgs
5 V
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

FDA59N25 Description
FDA59N25 is an N-channel Power MOSFET by ON Semiconductor having a 250V operating voltage. UniFETTM MOSFETs are a type of high-voltage MOSFET that uses planar stripe and DMOS technology. This MOSFET has been designed to have a lower on-state resistance, improved switching performance, and a stronger avalanche energy strength. This device series is ideal for power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballast applications.

FDA59N25 Features
RDS(on) = 49m? ( Max.)@ VGS = 10V, ID = 29.5A
Low gate charge ( Typ. 63nC)
Low Crss ( Typ. 70pF)
100% avalanche tested

FDA59N25 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial

FDA59N25 More Descriptions

N-Channel Power MOSFET, UniFETTM, 250V, 59A, 49mΩ, TO-3P
Single N-Channel 250 V 0.049 Ohm 82 nC 392 W Silicon Flange Mount Mosfet TO-3PN
MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:59A; Drain Source Voltage Vds:250V; On Resistance Rds(on):49mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:392W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:59A; Package / Case:TO-3P; Power Dissipation Pd:392W; Power Dissipation Pd:392W; Pulse Current Idm:236A; Termination Type:Through Hole; Voltage Vds Typ:250V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Certification

Related parts for FDA59N25

FDA59N25

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FDA59N2~~(2)~~
FDA59N~~(4)~~
FDA59~~(4)~~
FDA5~~(11)~~
FDA~~(348)~~

Part Number	Manufacturers	Description	Stock	Price
FDA59N25 DISTI #	ON Semiconductor	250V N-CHANNEL MOSFET	156	1 $2.499 10 $2.205 100 $1.965 250 $1.882 500 $1.717 1000 $1.321 2500 $1.195
FDA59N25 DISTI #	ON Semiconductor	MOSFET N-CH 250V 59A TO-3P RoHS: Compliant	714	1 $3.59 10 $3.219 450 $2.41376 900 $1.98052 1350 $1.85675
FDA59N25 DISTI #	ON Semiconductor	250V N-CHANNEL MOSFET	450	450 $1.6224 500 $1.4304 1000 $1.3344
FDA59N25 DISTI #	ON Semiconductor	250V N-CHANNEL MOSFET	156	5 $2.499 10 $2.205 100 $1.965 250 $1.882
FDA59N25 DISTI #	ON Semiconductor	Trans MOSFET N-CH 250V 59A 3-Pin TO-3PN Tube (Alt: RoHS: Compliant	0	1 $1.79 10 $1.49 25 $1.29 50 $1.29 100 $1.29 500 $1.19 1000 $1.19
FDA59N25 DISTI #	ON Semiconductor	Trans MOSFET N-CH 250V 59A 3-Pin(3 Tab) TO-3P(N) R RoHS: Compliant	0	1 $1.29 10 $1.29 25 $1.29 50 $1.29 100 $1.29 500 $1.19 1000 $1.19
FDA59N25 DISTI #	ON Semiconductor	MOSFET, N, TO-3P, Transistor Polarity:N Channel,	117	1 $3.16 10 $2.71 25 $2.6 50 $2.48 100 $2.36 250 $2.25 500 $2.03
FDA59N25 DISTI #	ON Semiconductor	MOSFET 250V N-Ch MOSFET RoHS: Compliant	695	1 $2.98 10 $2.54 100 $2.2 250 $2.09 500 $1.87 1000 $1.58 2500 $1.5 5000 $1.45
FDA59N25 DISTI #	ON Semiconductor	MOSFET, N, TO-3P RoHS: Compliant	118	1 $2.57 10 $1.94 100 $1.68 250 $1.6 500 $1.43
FDA59N25 DISTI #	ON Semiconductor	MOSFETs RoHS: Compliant	156	1 $2.499 10 $2.205 100 $1.965
FDA59N25 DISTI #	ON Semiconductor	Trans MOSFET N-CH 250V 59A 3-Pin(3 Tab) TO-3PN Tub RoHS: Compliant	690	450 $2.23
FDA59N25 DISTI #	ON Semiconductor	MOSFET, N, TO-3P RoHS: Compliant	117	1 $4.72 10 $4.03 100 $3.49 250 $3.31 500 $2.97 1000 $2.5 2500 $2.38 5000 $2.3

Fairchild/ON Semiconductor FDA59N25

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