Fairchild/ON Semiconductor FDA50N50

Name: FDA50N50
Brand: Fairchild/ON Semiconductor
SKU: 2479180-FDA50N50
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDA50N50

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2479180-FDA50N50

Description:: MOSFET N-CH 500V 48A TO-3P

ECAD Model:

Datasheet:: FDA50N50

Specifications

Fairchild/ON Semiconductor FDA50N50 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDA50N50.

Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Factory Lead Time
17 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Number of Pins
3
Weight
6.401g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
UniFET™
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
500V
Technology
MOSFET (Metal Oxide)
Current Rating
48A
Number of Elements
1
Power Dissipation-Max
625W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
625W
Turn On Delay Time
105 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
105m Ω @ 24A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
6460pF @ 25V
Current - Continuous Drain (Id) @ 25°C
48A Tc
Gate Charge (Qg) (Max) @ Vgs
137nC @ 10V
Rise Time
360ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
230 ns
Turn-Off Delay Time
225 ns
Continuous Drain Current (ID)
48A
Threshold Voltage
5V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
500V
Height
19.9mm
Length
15.6mm
Width
4.8mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDA50N50 Description
N-channel UniFET? MOSFET FDA50N50 belongs to the family of high-voltage MOSFET family provided by ON Semiconductor based on the planar stripe and DMOS technology. It is specifically designed to provide lower on-state resistance, advanced switching performance, and higher avalanche energy strength. Due to its reliable performance, it is well suited for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts.

FDA50N50 Features
Lower on-state resistance
Better switching performance
Higher avalanche energy strength
Improved dv/dt capability
Available in the TO-247-3LD/TO-3PN package

FDA50N50 Applications
Lighting
LCD/LED/PDP TV
AC-DC power supply
Uninterruptible power supply
Power factor correction (PFC)
Flat panel display (FPD) TV power

FDA50N50 More Descriptions

N-Channel Power MOSFET, UniFETTM, 500V, 48A, 105mΩ, TO-3P
Trans MOSFET N-CH 500V 48A 3-Pin(3 Tab) TO-3P Tube / MOSFET N-CH 500V 48A TO-3P
MOSFET, N-CH, 500V, 48A, TO-3PN-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 48A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.089ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Po
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Certification