Fairchild/ON Semiconductor FCH35N60
- Part Number:
- FCH35N60
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2482766-FCH35N60
- Description:
- MOSFET N-CH 600V 35A TO-247
- ECAD Model:
-
- Datasheet:
- FCH35N60
Fairchild/ON Semiconductor FCH35N60 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FCH35N60.
- Lifecycle StatusACTIVE (Last Updated: 1 week ago)
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Weight6.39g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesSuperMOS™
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Power Dissipation-Max312.5W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation312.5W
- Turn On Delay Time34 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs98m Ω @ 17.5A, 10V
- Vgs(th) (Max) @ Id5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds6640pF @ 25V
- Current - Continuous Drain (Id) @ 25°C35A Tc
- Gate Charge (Qg) (Max) @ Vgs181nC @ 10V
- Rise Time120ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)73 ns
- Turn-Off Delay Time105 ns
- Continuous Drain Current (ID)35A
- Threshold Voltage3V
- Gate to Source Voltage (Vgs)30V
- Drain-source On Resistance-Max0.098Ohm
- Drain to Source Breakdown Voltage600V
- Height20.82mm
- Length15.87mm
- Width4.82mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
FCH35N60 Description
The ON Semiconductor FCH35N60 is a SuperFET? MOSFET from the first generation of the high voltage super-junction (SJ) MOSFET family.
FCH35N60 Features
650V @TJ = 150??C
Typ. RDS(on) = 79m|?
Ultra-low gate charge ( Typ. Qg = 139nC )
Low effective output capacitance ( Typ. Coss.eff = 340pF )
100% avalanche tested
FCH35N60 Applications
General usage and suitable for many different applications
The ON Semiconductor FCH35N60 is a SuperFET? MOSFET from the first generation of the high voltage super-junction (SJ) MOSFET family.
FCH35N60 Features
650V @TJ = 150??C
Typ. RDS(on) = 79m|?
Ultra-low gate charge ( Typ. Qg = 139nC )
Low effective output capacitance ( Typ. Coss.eff = 340pF )
100% avalanche tested
FCH35N60 Applications
General usage and suitable for many different applications
FCH35N60 More Descriptions
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 35 A, 98 mΩ, TO-247
Power Field-Effect Transistor, 35A I(D), 600V, 0.098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
MOSFET, N CH, 600V, 35A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.079ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:312.5W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:105A
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Power Field-Effect Transistor, 35A I(D), 600V, 0.098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
MOSFET, N CH, 600V, 35A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.079ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:312.5W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:105A
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
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