Diodes Incorporated DMP3010LK3-13

Name: DMP3010LK3-13
Brand: Diodes Incorporated
SKU: 2478114-DMP3010LK3-13
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMP3010LK3-13

Manufacturer:: Diodes Incorporated

Ventron No:: 2478114-DMP3010LK3-13

Description:: MOSFET P CH 30V 17A TO252

ECAD Model:

Datasheet:: DMP3010LK3-13

Specifications

Diodes Incorporated DMP3010LK3-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP3010LK3-13.

Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Weight
3.949996g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e3
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
40
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
1.7W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
3.4W
Case Connection
DRAIN
Turn On Delay Time
11.4 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
8m Ω @ 10A, 10V
Vgs(th) (Max) @ Id
2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
6234pF @ 15V
Current - Continuous Drain (Id) @ 25°C
17A Ta
Gate Charge (Qg) (Max) @ Vgs
59.2nC @ 4.5V
Rise Time
9.4ns
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
99.3 ns
Turn-Off Delay Time
260.7 ns
Continuous Drain Current (ID)
17A
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Length
6.7mm
Width
6.2mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

DMP3010LK3-13 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 6234pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 17A amps.It is [260.7 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 11.4 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

DMP3010LK3-13 Features
a continuous drain current (ID) of 17A
the turn-off delay time is 260.7 ns
a 30V drain to source voltage (Vdss)

DMP3010LK3-13 Applications
There are a lot of Diodes Incorporated
DMP3010LK3-13 applications of single MOSFETs transistors.

Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies

DMP3010LK3-13 More Descriptions

Mosfet, P-Ch, 30V, 17A, 150Deg C, 1.7W Rohs Compliant: Yes |Diodes Inc. DMP3010LK3-13
Single P-Channel 30 V 10.2 mOhm 59.2 nC 3.4 W Silicon SMT Mosfet - TO-252-3
Trans MOSFET P-CH 30V 17A Automotive 3-Pin(2 Tab) DPAK T/R
MOSFET, P-Ch,30V,14.5A, Enhancement, UDFN-6 | Diodes Inc DMP3010LK3-13
Power Field-Effect Transistor, 14.5A I(D), 30V, 0.01ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Product Comparison

The three parts on the right have similar specifications to DMP3010LK3-13.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Height

Length

Width

REACH SVHC

RoHS Status

Lead Free

Terminal Position

Configuration

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Number of Functions

Pin Count

Interface IC Type

Drain to Source Breakdown Voltage

High Side Driver

Radiation Hardening

View Compare
DMP3010LK3-13

Diodes Incorporated

15 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

3.949996g

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2012

e3

no

Active

1 (Unlimited)

2

EAR99

Matte Tin (Sn)

Other Transistors

MOSFET (Metal Oxide)

GULL WING

260

not_compliant

40

R-PSSO-G2

1

1

1.7W Ta

Single

ENHANCEMENT MODE

3.4W

DRAIN

11.4 ns

P-Channel

SWITCHING

8m Ω @ 10A, 10V

2.1V @ 250μA

6234pF @ 15V

17A Ta

59.2nC @ 4.5V

9.4ns

30V

4.5V 10V

±20V

99.3 ns

260.7 ns

17A

20V

2.39mm

6.7mm

6.2mm

No SVHC

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-
DMP3056L-13

Diodes Incorporated

23 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2015

e3

-

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

-

MOSFET (Metal Oxide)

GULL WING

NOT SPECIFIED

-

NOT SPECIFIED

R-PDSO-G3

1

-

1.38W Ta

-

ENHANCEMENT MODE

-

-

-

P-Channel

SWITCHING

50m Ω @ 6A, 10V

2.1V @ 250μA

642pF @ 25V

4.3A Ta

11.8nC @ 10V

-

30V

4.5V 10V

±25V

-

-

4.3A

-

-

-

-

-

ROHS3 Compliant

-

DUAL

SINGLE WITH BUILT-IN DIODE

0.05Ohm

20A

30V

-

-

-

-

-

-

DMP3010LK3-13 vs DMP3056L-13
DMP3010LPS-13

Diodes Incorporated

7 Weeks

Surface Mount

Surface Mount

8-PowerTDFN

8

95.991485mg

-

-55°C~150°C TJ

Tape & Reel (TR)

2012

e3

yes

Obsolete

1 (Unlimited)

8

EAR99

Matte Tin (Sn)

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

1

2.18W Ta

Single

-

-

-

11.4 ns

P-Channel

-

7.5m Ω @ 10A, 10V

2.1V @ 250μA

6234pF @ 15V

14.5A Ta

126.2nC @ 10V

9.4ns

30V

4.5V 10V

±20V

99.3 ns

260.7 ns

36A

20V

1.1mm

6mm

5.1mm

No SVHC

ROHS3 Compliant

Lead Free

DUAL

-

-

-

-

1

8

BUFFER OR INVERTER BASED MOSFET DRIVER

-30V

NO

No

DMP3010LK3-13 vs DMP3010LPS-13
DMP32D4S-7

Diodes Incorporated

16 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

-

-

-55°C~150°C TJ

Tape & Reel (TR)

2013

e3

-

Active

1 (Unlimited)

-

EAR99

Matte Tin (Sn)

Other Transistors

MOSFET (Metal Oxide)

-

260

-

30

-

-

-

370mW Ta

Single

-

-

-

9.86 ns

P-Channel

-

2.4 Ω @ 300mA, 10V

2.4V @ 250μA

51.16pF @ 15V

300mA Ta

1.2nC @ 10V

11.5ns

30V

4.5V 10V

±20V

21.9 ns

31.8 ns

300mA

20V

1mm

3mm

1.4mm

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

No

DMP3010LK3-13 vs DMP32D4S-7