Diodes Incorporated DMP32D4SW-7
- Part Number:
- DMP32D4SW-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3586089-DMP32D4SW-7
- Description:
- MOSFET P-CH 30V 0.25A SOT323
- Datasheet:
- DMP32D4SW-7
Diodes Incorporated DMP32D4SW-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP32D4SW-7.
- Factory Lead Time16 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Number of Pins3
- Weight6.010099mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2013
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Number of Channels1
- Power Dissipation-Max300mW Ta
- Operating ModeENHANCEMENT MODE
- Turn On Delay Time9.86 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs2.4 Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id2.4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds51.16pF @ 15V
- Current - Continuous Drain (Id) @ 25°C250mA Ta
- Gate Charge (Qg) (Max) @ Vgs1.2nC @ 10V
- Rise Time11.5ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)21.9 ns
- Turn-Off Delay Time31.8 ns
- Continuous Drain Current (ID)250mA
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)0.25A
- Height1mm
- Length2.2mm
- Width1.35mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DMP32D4SW-7 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 51.16pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 0.25A.As a result of its turn-off delay time, which is 31.8 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 9.86 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
DMP32D4SW-7 Features
a continuous drain current (ID) of 250mA
the turn-off delay time is 31.8 ns
a 30V drain to source voltage (Vdss)
DMP32D4SW-7 Applications
There are a lot of Diodes Incorporated
DMP32D4SW-7 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 51.16pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 0.25A.As a result of its turn-off delay time, which is 31.8 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 9.86 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
DMP32D4SW-7 Features
a continuous drain current (ID) of 250mA
the turn-off delay time is 31.8 ns
a 30V drain to source voltage (Vdss)
DMP32D4SW-7 Applications
There are a lot of Diodes Incorporated
DMP32D4SW-7 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DMP32D4SW-7 More Descriptions
P-Channel 30 V 2.4 Ohm Surface Mount Enhancement Mode Mosfet - SOT-323
Mosfet, P-Ch, 30V, 0.25A, Sot-323 Rohs Compliant: Yes |Diodes Inc. DMP32D4SW-7
Trans MOSFET P-CH 30V 0.25A Automotive 3-Pin SOT-323 T/R
Mosfet, P-Ch, 30V, 0.25A, Sot-323 Rohs Compliant: Yes |Diodes Inc. DMP32D4SW-7
Trans MOSFET P-CH 30V 0.25A Automotive 3-Pin SOT-323 T/R
The three parts on the right have similar specifications to DMP32D4SW-7.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ElementsConfigurationNumber of ChannelsPower Dissipation-MaxOperating ModeTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeJESD-30 CodePower DissipationDrain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Max Junction Temperature (Tj)DS Breakdown Voltage-MinPbfree CodeNumber of FunctionsPin CountElement ConfigurationInterface IC TypeHigh Side DriverView Compare
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DMP32D4SW-716 WeeksSurface MountSurface MountSC-70, SOT-32336.010099mgSILICON-55°C~150°C TJTape & Reel (TR)2013e3Active1 (Unlimited)3EAR99Matte Tin (Sn)HIGH RELIABILITYOther TransistorsMOSFET (Metal Oxide)DUALGULL WING260301SINGLE WITH BUILT-IN DIODE1300mW TaENHANCEMENT MODE9.86 nsP-ChannelSWITCHING2.4 Ω @ 500mA, 10V2.4V @ 250μA51.16pF @ 15V250mA Ta1.2nC @ 10V11.5ns30V4.5V 10V±20V21.9 ns31.8 ns250mA20V0.25A1mm2.2mm1.35mmNo SVHCNoROHS3 CompliantLead Free--------------
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23 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3--SILICON-55°C~150°C TJTape & Reel (TR)2016e3Active1 (Unlimited)3EAR99Matte Tin (Sn)--MOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIEDNOT SPECIFIED1SINGLE WITH BUILT-IN DIODE11.38W TaENHANCEMENT MODE4.9 nsP-ChannelSWITCHING50m Ω @ 6A, 10V2.1V @ 250μA642pF @ 25V4.3A Ta11.8nC @ 10V-30V4.5V 10V±25V-35.2 ns-4.3A25V-1.1mm----ROHS3 Compliant-R-PDSO-G31.38W0.05Ohm-30V20A150°C-------
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23 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3--SILICON-55°C~150°C TJTape & Reel (TR)2015e3Active1 (Unlimited)3EAR99Matte Tin (Sn)--MOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIEDNOT SPECIFIED1SINGLE WITH BUILT-IN DIODE-1.38W TaENHANCEMENT MODE-P-ChannelSWITCHING50m Ω @ 6A, 10V2.1V @ 250μA642pF @ 25V4.3A Ta11.8nC @ 10V-30V4.5V 10V±25V--4.3A-------ROHS3 Compliant-R-PDSO-G3-0.05Ohm-20A-30V------
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7 WeeksSurface MountSurface Mount8-PowerTDFN895.991485mg--55°C~150°C TJTape & Reel (TR)2012e3Obsolete1 (Unlimited)8EAR99Matte Tin (Sn)--MOSFET (Metal Oxide)DUAL-----12.18W Ta-11.4 nsP-Channel-7.5m Ω @ 10A, 10V2.1V @ 250μA6234pF @ 15V14.5A Ta126.2nC @ 10V9.4ns30V4.5V 10V±20V99.3 ns260.7 ns36A20V-1.1mm6mm5.1mmNo SVHCNoROHS3 CompliantLead Free----30V---yes18SingleBUFFER OR INVERTER BASED MOSFET DRIVERNO
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