DMP32D4SW-7

Diodes Incorporated DMP32D4SW-7

Part Number:
DMP32D4SW-7
Manufacturer:
Diodes Incorporated
Ventron No:
3586089-DMP32D4SW-7
Description:
MOSFET P-CH 30V 0.25A SOT323
ECAD Model:
Datasheet:
DMP32D4SW-7

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Specifications
Diodes Incorporated DMP32D4SW-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP32D4SW-7.
  • Factory Lead Time
    16 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-70, SOT-323
  • Number of Pins
    3
  • Weight
    6.010099mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2013
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Number of Channels
    1
  • Power Dissipation-Max
    300mW Ta
  • Operating Mode
    ENHANCEMENT MODE
  • Turn On Delay Time
    9.86 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    2.4 Ω @ 500mA, 10V
  • Vgs(th) (Max) @ Id
    2.4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    51.16pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    250mA Ta
  • Gate Charge (Qg) (Max) @ Vgs
    1.2nC @ 10V
  • Rise Time
    11.5ns
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    21.9 ns
  • Turn-Off Delay Time
    31.8 ns
  • Continuous Drain Current (ID)
    250mA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    0.25A
  • Height
    1mm
  • Length
    2.2mm
  • Width
    1.35mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
DMP32D4SW-7 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 51.16pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 0.25A.As a result of its turn-off delay time, which is 31.8 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 9.86 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

DMP32D4SW-7 Features
a continuous drain current (ID) of 250mA
the turn-off delay time is 31.8 ns
a 30V drain to source voltage (Vdss)


DMP32D4SW-7 Applications
There are a lot of Diodes Incorporated
DMP32D4SW-7 applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DMP32D4SW-7 More Descriptions
P-Channel 30 V 2.4 Ohm Surface Mount Enhancement Mode Mosfet - SOT-323
Mosfet, P-Ch, 30V, 0.25A, Sot-323 Rohs Compliant: Yes |Diodes Inc. DMP32D4SW-7
Trans MOSFET P-CH 30V 0.25A Automotive 3-Pin SOT-323 T/R
Product Comparison
The three parts on the right have similar specifications to DMP32D4SW-7.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Number of Elements
    Configuration
    Number of Channels
    Power Dissipation-Max
    Operating Mode
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    JESD-30 Code
    Power Dissipation
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Max Junction Temperature (Tj)
    DS Breakdown Voltage-Min
    Pbfree Code
    Number of Functions
    Pin Count
    Element Configuration
    Interface IC Type
    High Side Driver
    View Compare
  • DMP32D4SW-7
    DMP32D4SW-7
    16 Weeks
    Surface Mount
    Surface Mount
    SC-70, SOT-323
    3
    6.010099mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2013
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    1
    SINGLE WITH BUILT-IN DIODE
    1
    300mW Ta
    ENHANCEMENT MODE
    9.86 ns
    P-Channel
    SWITCHING
    2.4 Ω @ 500mA, 10V
    2.4V @ 250μA
    51.16pF @ 15V
    250mA Ta
    1.2nC @ 10V
    11.5ns
    30V
    4.5V 10V
    ±20V
    21.9 ns
    31.8 ns
    250mA
    20V
    0.25A
    1mm
    2.2mm
    1.35mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • DMP3056L-7
    23 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2016
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    1
    SINGLE WITH BUILT-IN DIODE
    1
    1.38W Ta
    ENHANCEMENT MODE
    4.9 ns
    P-Channel
    SWITCHING
    50m Ω @ 6A, 10V
    2.1V @ 250μA
    642pF @ 25V
    4.3A Ta
    11.8nC @ 10V
    -
    30V
    4.5V 10V
    ±25V
    -
    35.2 ns
    -4.3A
    25V
    -
    1.1mm
    -
    -
    -
    -
    ROHS3 Compliant
    -
    R-PDSO-G3
    1.38W
    0.05Ohm
    -30V
    20A
    150°C
    -
    -
    -
    -
    -
    -
    -
  • DMP3056L-13
    23 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    1
    SINGLE WITH BUILT-IN DIODE
    -
    1.38W Ta
    ENHANCEMENT MODE
    -
    P-Channel
    SWITCHING
    50m Ω @ 6A, 10V
    2.1V @ 250μA
    642pF @ 25V
    4.3A Ta
    11.8nC @ 10V
    -
    30V
    4.5V 10V
    ±25V
    -
    -
    4.3A
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    R-PDSO-G3
    -
    0.05Ohm
    -
    20A
    -
    30V
    -
    -
    -
    -
    -
    -
  • DMP3010LPS-13
    7 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    95.991485mg
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    e3
    Obsolete
    1 (Unlimited)
    8
    EAR99
    Matte Tin (Sn)
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    -
    -
    -
    -
    -
    1
    2.18W Ta
    -
    11.4 ns
    P-Channel
    -
    7.5m Ω @ 10A, 10V
    2.1V @ 250μA
    6234pF @ 15V
    14.5A Ta
    126.2nC @ 10V
    9.4ns
    30V
    4.5V 10V
    ±20V
    99.3 ns
    260.7 ns
    36A
    20V
    -
    1.1mm
    6mm
    5.1mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -30V
    -
    -
    -
    yes
    1
    8
    Single
    BUFFER OR INVERTER BASED MOSFET DRIVER
    NO
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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