DMP1245UFCL-7

Diodes Incorporated DMP1245UFCL-7

Part Number:
DMP1245UFCL-7
Manufacturer:
Diodes Incorporated
Ventron No:
2479252-DMP1245UFCL-7
Description:
MOSFET P-CH 12V 6.6A 6-UFDFN
ECAD Model:
Datasheet:
DMP1245UFCL-7

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Specifications
Diodes Incorporated DMP1245UFCL-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP1245UFCL-7.
  • Factory Lead Time
    17 Weeks
  • Contact Plating
    Gold
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    6-PowerUFDFN
  • Number of Pins
    6
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2015
  • JESD-609 Code
    e4
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Pin Count
    6
  • JESD-30 Code
    R-PDSO-N3
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    613mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Turn On Delay Time
    15.2 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    29m Ω @ 4A, 4.5V
  • Vgs(th) (Max) @ Id
    950mV @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1357.4pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    6.6A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    26.1nC @ 8V
  • Rise Time
    33.11ns
  • Drain to Source Voltage (Vdss)
    12V
  • Drive Voltage (Max Rds On,Min Rds On)
    1.5V 4.5V
  • Vgs (Max)
    ±8V
  • Fall Time (Typ)
    217.64 ns
  • Turn-Off Delay Time
    219.4 ns
  • Continuous Drain Current (ID)
    6.6A
  • Gate to Source Voltage (Vgs)
    8V
  • Drain-source On Resistance-Max
    0.029Ohm
  • Drain to Source Breakdown Voltage
    -12V
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
DMP1245UFCL-7 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1357.4pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 6.6A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-12V. And this device has -12V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 219.4 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 15.2 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 8V.Operating this transistor requires a 12V drain to source voltage (Vdss).By using drive voltage (1.5V 4.5V), this device helps reduce its overall power consumption.

DMP1245UFCL-7 Features
a continuous drain current (ID) of 6.6A
a drain-to-source breakdown voltage of -12V voltage
the turn-off delay time is 219.4 ns
a 12V drain to source voltage (Vdss)


DMP1245UFCL-7 Applications
There are a lot of Diodes Incorporated
DMP1245UFCL-7 applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
DMP1245UFCL-7 More Descriptions
Mosfet, P-Ch, 12V, 6.6A, X1-Dfn1616 Rohs Compliant: Yes |Diodes Inc. DMP1245UFCL-7
Single P-Channel 12 V 100 mOhm 16.1 nC 613 mW Silicon SMT Mosfet - UFDFN-6
Trans MOSFET P-CH 12V 6.6A Automotive 7-Pin DFN EP T/R
Product Comparison
The three parts on the right have similar specifications to DMP1245UFCL-7.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Technology
    Terminal Position
    Pin Count
    JESD-30 Code
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Pbfree Code
    Terminal Finish
    Additional Feature
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Reference Standard
    Configuration
    Drain Current-Max (Abs) (ID)
    DS Breakdown Voltage-Min
    Capacitance
    Base Part Number
    Power Dissipation
    Height
    Length
    Width
    Lead Free
    View Compare
  • DMP1245UFCL-7
    DMP1245UFCL-7
    17 Weeks
    Gold
    Surface Mount
    Surface Mount
    6-PowerUFDFN
    6
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    e4
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    6
    R-PDSO-N3
    1
    1
    613mW Ta
    Single
    ENHANCEMENT MODE
    DRAIN
    15.2 ns
    P-Channel
    SWITCHING
    29m Ω @ 4A, 4.5V
    950mV @ 250μA
    1357.4pF @ 10V
    6.6A Ta
    26.1nC @ 8V
    33.11ns
    12V
    1.5V 4.5V
    ±8V
    217.64 ns
    219.4 ns
    6.6A
    8V
    0.029Ohm
    -12V
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • DMP10H4D2S-13
    17 Weeks
    -
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    -
    MOSFET (Metal Oxide)
    DUAL
    -
    R-PDSO-G3
    1
    -
    380mW Ta
    -
    ENHANCEMENT MODE
    -
    -
    P-Channel
    SWITCHING
    4.2 Ω @ 500mA, 10V
    3V @ 250μA
    87pF @ 25V
    270mA Ta
    1.8nC @ 10V
    -
    100V
    4V 10V
    ±20V
    -
    -
    270mA
    -
    -
    -
    -
    -
    ROHS3 Compliant
    yes
    Matte Tin (Sn)
    HIGH RELIABILITY
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    AEC-Q101
    SINGLE WITH BUILT-IN DIODE
    0.27A
    100V
    -
    -
    -
    -
    -
    -
    -
  • DMP1022UFDF-7
    14 Weeks
    -
    Surface Mount
    Surface Mount
    6-UDFN Exposed Pad
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    e4
    Active
    1 (Unlimited)
    6
    EAR99
    -
    MOSFET (Metal Oxide)
    DUAL
    -
    S-PDSO-N6
    1
    1
    730mW Ta
    Single
    ENHANCEMENT MODE
    DRAIN
    25.1 ns
    P-Channel
    SWITCHING
    15.3m Ω @ 4A, 4.5V
    800mV @ 250μA
    2712pF @ 10V
    9.5A Ta
    48.3nC @ 8V
    39.8ns
    12V
    1.5V 4.5V
    ±8V
    147 ns
    141 ns
    9.5A
    8V
    0.026Ohm
    -12V
    -
    -
    ROHS3 Compliant
    -
    Nickel/Palladium/Gold (Ni/Pd/Au)
    HIGH RELIABILITY
    NO LEAD
    -
    -
    -
    -
    -
    -
    2.712nF
    DMP1022
    -
    -
    -
    -
    -
  • DMP1022UFDE-7
    -
    -
    Surface Mount
    Surface Mount
    6-UDFN Exposed Pad
    6
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    e4
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    6
    S-PDSO-N3
    1
    2
    660mW Ta
    Single
    ENHANCEMENT MODE
    DRAIN
    20 ns
    P-Channel
    SWITCHING
    16m Ω @ 8.2A, 4.5V
    800mV @ 250μA
    2953pF @ 4V
    9.1A Ta
    42.6nC @ 5V
    28ns
    12V
    1.2V 4.5V
    ±8V
    93 ns
    117 ns
    9.1A
    8V
    -
    -
    No SVHC
    No
    ROHS3 Compliant
    yes
    Nickel/Palladium/Gold (Ni/Pd/Au)
    HIGH RELIABILITY
    -
    260
    40
    -
    -
    -
    -
    -
    -
    2.03W
    580μm
    2.05mm
    2.05mm
    Lead Free
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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