Diodes Incorporated DMP1245UFCL-7
- Part Number:
- DMP1245UFCL-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2479252-DMP1245UFCL-7
- Description:
- MOSFET P-CH 12V 6.6A 6-UFDFN
- Datasheet:
- DMP1245UFCL-7
Diodes Incorporated DMP1245UFCL-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP1245UFCL-7.
- Factory Lead Time17 Weeks
- Contact PlatingGold
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-PowerUFDFN
- Number of Pins6
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2015
- JESD-609 Codee4
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Pin Count6
- JESD-30 CodeR-PDSO-N3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max613mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Turn On Delay Time15.2 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs29m Ω @ 4A, 4.5V
- Vgs(th) (Max) @ Id950mV @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1357.4pF @ 10V
- Current - Continuous Drain (Id) @ 25°C6.6A Ta
- Gate Charge (Qg) (Max) @ Vgs26.1nC @ 8V
- Rise Time33.11ns
- Drain to Source Voltage (Vdss)12V
- Drive Voltage (Max Rds On,Min Rds On)1.5V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)217.64 ns
- Turn-Off Delay Time219.4 ns
- Continuous Drain Current (ID)6.6A
- Gate to Source Voltage (Vgs)8V
- Drain-source On Resistance-Max0.029Ohm
- Drain to Source Breakdown Voltage-12V
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
DMP1245UFCL-7 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1357.4pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 6.6A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-12V. And this device has -12V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 219.4 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 15.2 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 8V.Operating this transistor requires a 12V drain to source voltage (Vdss).By using drive voltage (1.5V 4.5V), this device helps reduce its overall power consumption.
DMP1245UFCL-7 Features
a continuous drain current (ID) of 6.6A
a drain-to-source breakdown voltage of -12V voltage
the turn-off delay time is 219.4 ns
a 12V drain to source voltage (Vdss)
DMP1245UFCL-7 Applications
There are a lot of Diodes Incorporated
DMP1245UFCL-7 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1357.4pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 6.6A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-12V. And this device has -12V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 219.4 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 15.2 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 8V.Operating this transistor requires a 12V drain to source voltage (Vdss).By using drive voltage (1.5V 4.5V), this device helps reduce its overall power consumption.
DMP1245UFCL-7 Features
a continuous drain current (ID) of 6.6A
a drain-to-source breakdown voltage of -12V voltage
the turn-off delay time is 219.4 ns
a 12V drain to source voltage (Vdss)
DMP1245UFCL-7 Applications
There are a lot of Diodes Incorporated
DMP1245UFCL-7 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
DMP1245UFCL-7 More Descriptions
Mosfet, P-Ch, 12V, 6.6A, X1-Dfn1616 Rohs Compliant: Yes |Diodes Inc. DMP1245UFCL-7
Single P-Channel 12 V 100 mOhm 16.1 nC 613 mW Silicon SMT Mosfet - UFDFN-6
Trans MOSFET P-CH 12V 6.6A Automotive 7-Pin DFN EP T/R
Single P-Channel 12 V 100 mOhm 16.1 nC 613 mW Silicon SMT Mosfet - UFDFN-6
Trans MOSFET P-CH 12V 6.6A Automotive 7-Pin DFN EP T/R
The three parts on the right have similar specifications to DMP1245UFCL-7.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryTechnologyTerminal PositionPin CountJESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModeCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageREACH SVHCRadiation HardeningRoHS StatusPbfree CodeTerminal FinishAdditional FeatureTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Reference StandardConfigurationDrain Current-Max (Abs) (ID)DS Breakdown Voltage-MinCapacitanceBase Part NumberPower DissipationHeightLengthWidthLead FreeView Compare
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DMP1245UFCL-717 WeeksGoldSurface MountSurface Mount6-PowerUFDFN6SILICON-55°C~150°C TJTape & Reel (TR)2015e4Active1 (Unlimited)3EAR99Other TransistorsMOSFET (Metal Oxide)DUAL6R-PDSO-N311613mW TaSingleENHANCEMENT MODEDRAIN15.2 nsP-ChannelSWITCHING29m Ω @ 4A, 4.5V950mV @ 250μA1357.4pF @ 10V6.6A Ta26.1nC @ 8V33.11ns12V1.5V 4.5V±8V217.64 ns219.4 ns6.6A8V0.029Ohm-12VNo SVHCNoROHS3 Compliant------------------
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17 Weeks-Surface MountSurface MountTO-236-3, SC-59, SOT-23-3-SILICON-55°C~150°C TJTape & Reel (TR)2012e3Active1 (Unlimited)3EAR99-MOSFET (Metal Oxide)DUAL-R-PDSO-G31-380mW Ta-ENHANCEMENT MODE--P-ChannelSWITCHING4.2 Ω @ 500mA, 10V3V @ 250μA87pF @ 25V270mA Ta1.8nC @ 10V-100V4V 10V±20V--270mA-----ROHS3 CompliantyesMatte Tin (Sn)HIGH RELIABILITYGULL WINGNOT SPECIFIEDNOT SPECIFIEDAEC-Q101SINGLE WITH BUILT-IN DIODE0.27A100V-------
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14 Weeks-Surface MountSurface Mount6-UDFN Exposed Pad-SILICON-55°C~150°C TJTape & Reel (TR)2015e4Active1 (Unlimited)6EAR99-MOSFET (Metal Oxide)DUAL-S-PDSO-N611730mW TaSingleENHANCEMENT MODEDRAIN25.1 nsP-ChannelSWITCHING15.3m Ω @ 4A, 4.5V800mV @ 250μA2712pF @ 10V9.5A Ta48.3nC @ 8V39.8ns12V1.5V 4.5V±8V147 ns141 ns9.5A8V0.026Ohm-12V--ROHS3 Compliant-Nickel/Palladium/Gold (Ni/Pd/Au)HIGH RELIABILITYNO LEAD------2.712nFDMP1022-----
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--Surface MountSurface Mount6-UDFN Exposed Pad6SILICON-55°C~150°C TJTape & Reel (TR)2012e4Obsolete1 (Unlimited)3EAR99Other TransistorsMOSFET (Metal Oxide)DUAL6S-PDSO-N312660mW TaSingleENHANCEMENT MODEDRAIN20 nsP-ChannelSWITCHING16m Ω @ 8.2A, 4.5V800mV @ 250μA2953pF @ 4V9.1A Ta42.6nC @ 5V28ns12V1.2V 4.5V±8V93 ns117 ns9.1A8V--No SVHCNoROHS3 CompliantyesNickel/Palladium/Gold (Ni/Pd/Au)HIGH RELIABILITY-26040------2.03W580μm2.05mm2.05mmLead Free
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