Diodes Incorporated DMP10H4D2S-7
- Part Number:
- DMP10H4D2S-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3070124-DMP10H4D2S-7
- Description:
- MOSFET P-CH 100V 0.27A SOT23
- Datasheet:
- DMP10H4D2S-7
Diodes Incorporated DMP10H4D2S-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP10H4D2S-7.
- Factory Lead Time17 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2015
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PDSO-G3
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Number of Channels1
- Power Dissipation-Max380mW Ta
- Operating ModeENHANCEMENT MODE
- Power Dissipation380mW
- Turn On Delay Time3.3 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs4.2 Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds87pF @ 25V
- Current - Continuous Drain (Id) @ 25°C270mA Ta
- Gate Charge (Qg) (Max) @ Vgs1.8nC @ 10V
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)4V 10V
- Vgs (Max)±20V
- Turn-Off Delay Time8.4 ns
- Continuous Drain Current (ID)-270mA
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)0.27A
- Drain to Source Breakdown Voltage-100V
- Max Junction Temperature (Tj)150°C
- Height1.1mm
- RoHS StatusROHS3 Compliant
DMP10H4D2S-7 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 87pF @ 25V.This device has a continuous drain current (ID) of [-270mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-100V, the drain-source breakdown voltage is -100V.A device's drain current is its maximum continuous current, and this device's drain current is 0.27A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 8.4 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 3.3 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4V 10V).
DMP10H4D2S-7 Features
a continuous drain current (ID) of -270mA
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 8.4 ns
a 100V drain to source voltage (Vdss)
DMP10H4D2S-7 Applications
There are a lot of Diodes Incorporated
DMP10H4D2S-7 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 87pF @ 25V.This device has a continuous drain current (ID) of [-270mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-100V, the drain-source breakdown voltage is -100V.A device's drain current is its maximum continuous current, and this device's drain current is 0.27A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 8.4 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 3.3 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4V 10V).
DMP10H4D2S-7 Features
a continuous drain current (ID) of -270mA
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 8.4 ns
a 100V drain to source voltage (Vdss)
DMP10H4D2S-7 Applications
There are a lot of Diodes Incorporated
DMP10H4D2S-7 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
DMP10H4D2S-7 More Descriptions
Mosfet Bvdss: 61V~100V Sot23 T&r 3K Rohs Compliant: Yes |Diodes Inc. DMP10H4D2S-7
DMP10H4D2S Series 100V 270 mA P-Channel Enhancement Mode Mosfet - SOT-23-3
MOSFET, P-CH, -100V, -0.27A, SOT23; Transistor Polarity: P Channel; Continuous Drain Current Id: -270mA; Drain Source Voltage Vds: -100V; On Resistance Rds(on): 2.8ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2
DMP10H4D2S Series 100V 270 mA P-Channel Enhancement Mode Mosfet - SOT-23-3
MOSFET, P-CH, -100V, -0.27A, SOT23; Transistor Polarity: P Channel; Continuous Drain Current Id: -270mA; Drain Source Voltage Vds: -100V; On Resistance Rds(on): 2.8ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2
The three parts on the right have similar specifications to DMP10H4D2S-7.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsConfigurationNumber of ChannelsPower Dissipation-MaxOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageMax Junction Temperature (Tj)HeightRoHS StatusCapacitanceElement ConfigurationCase ConnectionRise TimeFall Time (Typ)Drain-source On Resistance-MaxBase Part NumberView Compare
-
DMP10H4D2S-717 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3SILICON-55°C~150°C TJTape & Reel (TR)2015e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)HIGH RELIABILITYMOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G31SINGLE WITH BUILT-IN DIODE1380mW TaENHANCEMENT MODE380mW3.3 nsP-ChannelSWITCHING4.2 Ω @ 500mA, 10V3V @ 250μA87pF @ 25V270mA Ta1.8nC @ 10V100V4V 10V±20V8.4 ns-270mA20V0.27A-100V150°C1.1mmROHS3 Compliant--------
-
16 Weeks-Surface Mount6-TSSOP, SC-88, SOT-363--55°C~150°C TJTape & Reel (TR)-e3-Active1 (Unlimited)-EAR99Matte Tin (Sn)-MOSFET (Metal Oxide)--NOT SPECIFIEDNOT SPECIFIED----660mW---P-Channel-48m Ω @ 3A, 4.5V1V @ 250μA1028pF @ 6V3.8A Ta13nC @ 4.5V12V1.5V 4.5V±8V-------ROHS3 Compliant-------
-
14 WeeksSurface MountSurface Mount6-UDFN Exposed PadSILICON-55°C~150°C TJTape & Reel (TR)2013e4-Active1 (Unlimited)6EAR99Nickel/Palladium/Gold (Ni/Pd/Au)HIGH RELIABILITYMOSFET (Metal Oxide)DUALNO LEAD--S-PDSO-N61-1730mW TaENHANCEMENT MODE-25.1 nsP-ChannelSWITCHING14.8m Ω @ 4A, 4.5V800mV @ 250μA2712pF @ 10V9.5A Ta48.3nC @ 4.5V12V1.2V 4.5V±8V141 ns9.5A8V--12V--ROHS3 Compliant2.712nFSingleDRAIN39.8ns147 ns0.026Ohm-
-
14 WeeksSurface MountSurface Mount6-UDFN Exposed PadSILICON-55°C~150°C TJTape & Reel (TR)2015e4-Active1 (Unlimited)6EAR99Nickel/Palladium/Gold (Ni/Pd/Au)HIGH RELIABILITYMOSFET (Metal Oxide)DUALNO LEAD--S-PDSO-N61-1730mW TaENHANCEMENT MODE-25.1 nsP-ChannelSWITCHING15.3m Ω @ 4A, 4.5V800mV @ 250μA2712pF @ 10V9.5A Ta48.3nC @ 8V12V1.5V 4.5V±8V141 ns9.5A8V--12V--ROHS3 Compliant2.712nFSingleDRAIN39.8ns147 ns0.026OhmDMP1022
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
22 November 2023
ULN2804A Transistor Array Equivalents, Symbol, Working Principle and More
Ⅰ. Overview of ULN2804AⅡ. Symbol, footprint and pin configuration of ULN2804AⅢ. Manufacturer of ULN2804AⅣ. Features of ULN2804AⅤ. Technical parameters of ULN2804AⅥ. Working principle of ULN2804AⅦ. Applications of ULN2804AⅧ.... -
22 November 2023
An Overview of 74HC373 Octal Transparent D Type Latch
Ⅰ. Overview of 74HC373Ⅱ. Manufacturer of 74HC373Ⅲ. Pin configuration and functions of 74HC373Ⅳ. What are the features of 74HC373?Ⅴ. Technical parameters of 74HC373Ⅵ. What are the applications of... -
23 November 2023
OP07 Operational Amplifier Features, Pin Configuration and Application Scenarios
Ⅰ. Overview of OP07 operational amplifierⅡ. Features of OP07 operational amplifierⅢ. OP07 symbol, footprint and pin configurationⅣ. Working principle of OP07 operational amplifierⅤ. Differential amplifier circuit of OP07Ⅵ.... -
23 November 2023
AT89C52 Microcontroller Equivalents, Functions, Structure and Applications
Ⅰ. What is AT89C52 microcontroller?Ⅱ. What are the features of AT89C52 microcontroller?Ⅲ. AT89C52 symbol, footprint and pin configurationⅣ. Functions of AT89C52 microcontrollerⅤ. Structure of AT89C52 microcontrollerⅥ. What are...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.