DMP10H4D2S-7

Diodes Incorporated DMP10H4D2S-7

Part Number:
DMP10H4D2S-7
Manufacturer:
Diodes Incorporated
Ventron No:
3070124-DMP10H4D2S-7
Description:
MOSFET P-CH 100V 0.27A SOT23
ECAD Model:
Datasheet:
DMP10H4D2S-7

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Specifications
Diodes Incorporated DMP10H4D2S-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP10H4D2S-7.
  • Factory Lead Time
    17 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2015
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    HIGH RELIABILITY
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PDSO-G3
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Number of Channels
    1
  • Power Dissipation-Max
    380mW Ta
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    380mW
  • Turn On Delay Time
    3.3 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    4.2 Ω @ 500mA, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    87pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    270mA Ta
  • Gate Charge (Qg) (Max) @ Vgs
    1.8nC @ 10V
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    4V 10V
  • Vgs (Max)
    ±20V
  • Turn-Off Delay Time
    8.4 ns
  • Continuous Drain Current (ID)
    -270mA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    0.27A
  • Drain to Source Breakdown Voltage
    -100V
  • Max Junction Temperature (Tj)
    150°C
  • Height
    1.1mm
  • RoHS Status
    ROHS3 Compliant
Description
DMP10H4D2S-7 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 87pF @ 25V.This device has a continuous drain current (ID) of [-270mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-100V, the drain-source breakdown voltage is -100V.A device's drain current is its maximum continuous current, and this device's drain current is 0.27A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 8.4 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 3.3 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 100V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4V 10V).

DMP10H4D2S-7 Features
a continuous drain current (ID) of -270mA
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 8.4 ns
a 100V drain to source voltage (Vdss)


DMP10H4D2S-7 Applications
There are a lot of Diodes Incorporated
DMP10H4D2S-7 applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
DMP10H4D2S-7 More Descriptions
Mosfet Bvdss: 61V~100V Sot23 T&r 3K Rohs Compliant: Yes |Diodes Inc. DMP10H4D2S-7
DMP10H4D2S Series 100V 270 mA P-Channel Enhancement Mode Mosfet - SOT-23-3
MOSFET, P-CH, -100V, -0.27A, SOT23; Transistor Polarity: P Channel; Continuous Drain Current Id: -270mA; Drain Source Voltage Vds: -100V; On Resistance Rds(on): 2.8ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2
Product Comparison
The three parts on the right have similar specifications to DMP10H4D2S-7.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Configuration
    Number of Channels
    Power Dissipation-Max
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Max Junction Temperature (Tj)
    Height
    RoHS Status
    Capacitance
    Element Configuration
    Case Connection
    Rise Time
    Fall Time (Typ)
    Drain-source On Resistance-Max
    Base Part Number
    View Compare
  • DMP10H4D2S-7
    DMP10H4D2S-7
    17 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    R-PDSO-G3
    1
    SINGLE WITH BUILT-IN DIODE
    1
    380mW Ta
    ENHANCEMENT MODE
    380mW
    3.3 ns
    P-Channel
    SWITCHING
    4.2 Ω @ 500mA, 10V
    3V @ 250μA
    87pF @ 25V
    270mA Ta
    1.8nC @ 10V
    100V
    4V 10V
    ±20V
    8.4 ns
    -270mA
    20V
    0.27A
    -100V
    150°C
    1.1mm
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
  • DMP1055USW-7
    16 Weeks
    -
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    e3
    -
    Active
    1 (Unlimited)
    -
    EAR99
    Matte Tin (Sn)
    -
    MOSFET (Metal Oxide)
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    -
    660mW
    -
    -
    -
    P-Channel
    -
    48m Ω @ 3A, 4.5V
    1V @ 250μA
    1028pF @ 6V
    3.8A Ta
    13nC @ 4.5V
    12V
    1.5V 4.5V
    ±8V
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
  • DMP1022UFDF-13
    14 Weeks
    Surface Mount
    Surface Mount
    6-UDFN Exposed Pad
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2013
    e4
    -
    Active
    1 (Unlimited)
    6
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    HIGH RELIABILITY
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    -
    -
    S-PDSO-N6
    1
    -
    1
    730mW Ta
    ENHANCEMENT MODE
    -
    25.1 ns
    P-Channel
    SWITCHING
    14.8m Ω @ 4A, 4.5V
    800mV @ 250μA
    2712pF @ 10V
    9.5A Ta
    48.3nC @ 4.5V
    12V
    1.2V 4.5V
    ±8V
    141 ns
    9.5A
    8V
    -
    -12V
    -
    -
    ROHS3 Compliant
    2.712nF
    Single
    DRAIN
    39.8ns
    147 ns
    0.026Ohm
    -
  • DMP1022UFDF-7
    14 Weeks
    Surface Mount
    Surface Mount
    6-UDFN Exposed Pad
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    e4
    -
    Active
    1 (Unlimited)
    6
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    HIGH RELIABILITY
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    -
    -
    S-PDSO-N6
    1
    -
    1
    730mW Ta
    ENHANCEMENT MODE
    -
    25.1 ns
    P-Channel
    SWITCHING
    15.3m Ω @ 4A, 4.5V
    800mV @ 250μA
    2712pF @ 10V
    9.5A Ta
    48.3nC @ 8V
    12V
    1.5V 4.5V
    ±8V
    141 ns
    9.5A
    8V
    -
    -12V
    -
    -
    ROHS3 Compliant
    2.712nF
    Single
    DRAIN
    39.8ns
    147 ns
    0.026Ohm
    DMP1022
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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