Diodes Incorporated DMP10H400SK3-13
- Part Number:
- DMP10H400SK3-13
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3585982-DMP10H400SK3-13
- Description:
- MOSFET P-CH 100V 9A TO252
- Datasheet:
- DMP10H400SK3-13
Diodes Incorporated DMP10H400SK3-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP10H400SK3-13.
- Factory Lead Time17 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2013
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max42W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Turn On Delay Time9.1 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs240m Ω @ 5A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1239pF @ 25V
- Current - Continuous Drain (Id) @ 25°C9A Tc
- Gate Charge (Qg) (Max) @ Vgs17.5nC @ 10V
- Rise Time14.9ns
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)34.4 ns
- Turn-Off Delay Time57.4 ns
- Continuous Drain Current (ID)9A
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)9A
- Drain to Source Breakdown Voltage-100V
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DMP10H400SK3-13 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1239pF @ 25V.This device conducts a continuous drain current (ID) of 9A, which is the maximum continuous current transistor can conduct.Using VGS=-100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -100V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 9A.When the device is turned off, a turn-off delay time of 57.4 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 9.1 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
DMP10H400SK3-13 Features
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 57.4 ns
a 100V drain to source voltage (Vdss)
DMP10H400SK3-13 Applications
There are a lot of Diodes Incorporated
DMP10H400SK3-13 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1239pF @ 25V.This device conducts a continuous drain current (ID) of 9A, which is the maximum continuous current transistor can conduct.Using VGS=-100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -100V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 9A.When the device is turned off, a turn-off delay time of 57.4 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 9.1 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
DMP10H400SK3-13 Features
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 57.4 ns
a 100V drain to source voltage (Vdss)
DMP10H400SK3-13 Applications
There are a lot of Diodes Incorporated
DMP10H400SK3-13 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
DMP10H400SK3-13 More Descriptions
Mosfet Bvdss: 61V~100V To252 T&r 2.5K Rohs Compliant: Yes |Diodes Inc. DMP10H400SK3-13
Trans MOSFET P-CH 100V 9A Automotive 3-Pin(2 Tab) TO-252 T/R
Single P-Channel 100 V 300 mOhm 8.4 nC 42 W Silicon SMT Mosfet - TO-252-3
MOSFET, P-CH, -100V, -9A, TO252; Transistor Polarity:P Channel; Continuous Drain Current Id:-9A; Source Voltage Vds:-100V; On Resistance
Power Field-Effect Transistor, 9A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, P-CH, -100V, -9A, TO252; Transistor Polarity: P Channel; Continuous Drain Current Id: -9A; Drain Source Voltage Vds: -100V; On Resistance Rds(on): 0.19ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; Power Dissipation Pd: 42W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Trans MOSFET P-CH 100V 9A Automotive 3-Pin(2 Tab) TO-252 T/R
Single P-Channel 100 V 300 mOhm 8.4 nC 42 W Silicon SMT Mosfet - TO-252-3
MOSFET, P-CH, -100V, -9A, TO252; Transistor Polarity:P Channel; Continuous Drain Current Id:-9A; Source Voltage Vds:-100V; On Resistance
Power Field-Effect Transistor, 9A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, P-CH, -100V, -9A, TO252; Transistor Polarity: P Channel; Continuous Drain Current Id: -9A; Drain Source Voltage Vds: -100V; On Resistance Rds(on): 0.19ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; Power Dissipation Pd: 42W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
The three parts on the right have similar specifications to DMP10H400SK3-13.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModeCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageREACH SVHCRoHS StatusLead FreeAdditional FeatureCapacitanceTerminal PositionDrain-source On Resistance-MaxPbfree CodeView Compare
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DMP10H400SK3-1317 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633SILICON-55°C~150°C TJTape & Reel (TR)2013e3Active1 (Unlimited)2EAR99Matte Tin (Sn)Other TransistorsMOSFET (Metal Oxide)GULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PSSO-G21142W TcSingleENHANCEMENT MODEDRAIN9.1 nsP-ChannelSWITCHING240m Ω @ 5A, 10V3V @ 250μA1239pF @ 25V9A Tc17.5nC @ 10V14.9ns100V4.5V 10V±20V34.4 ns57.4 ns9A20V9A-100VNo SVHCROHS3 CompliantLead Free------
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14 WeeksSurface MountSurface Mount6-UDFN Exposed Pad-SILICON-55°C~150°C TJTape & Reel (TR)2013e4Active1 (Unlimited)6EAR99Nickel/Palladium/Gold (Ni/Pd/Au)-MOSFET (Metal Oxide)NO LEAD--S-PDSO-N611730mW TaSingleENHANCEMENT MODEDRAIN25.1 nsP-ChannelSWITCHING14.8m Ω @ 4A, 4.5V800mV @ 250μA2712pF @ 10V9.5A Ta48.3nC @ 4.5V39.8ns12V1.2V 4.5V±8V147 ns141 ns9.5A8V--12V-ROHS3 Compliant-HIGH RELIABILITY2.712nFDUAL0.026Ohm-
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16 Weeks-Surface Mount6-TSSOP, SC-88, SOT-363---55°C~150°C TJTape & Reel (TR)-e3Active1 (Unlimited)-EAR99Matte Tin (Sn)-MOSFET (Metal Oxide)-NOT SPECIFIEDNOT SPECIFIED---660mW----P-Channel-48m Ω @ 3A, 4.5V1V @ 250μA1028pF @ 6V3.8A Ta13nC @ 4.5V-12V1.5V 4.5V±8V-------ROHS3 Compliant------
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17 WeeksSurface MountSurface Mount4-UFBGA, WLBGA4--55°C~150°C TJTape & Reel (TR)2016e1Active1 (Unlimited)-EAR99Tin/Silver/Copper (Sn/Ag/Cu)-MOSFET (Metal Oxide)-NOT SPECIFIEDNOT SPECIFIED---820mW Ta----P-Channel-80m Ω @ 500mA, 4.5V650mV @ 250μA350pF @ 6V3A Ta 3.3A Ta5nC @ 4.5V-12V0.9V 4.5V-6V--3.3A----ROHS3 Compliant-----yes
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