DMP10H400SK3-13

Diodes Incorporated DMP10H400SK3-13

Part Number:
DMP10H400SK3-13
Manufacturer:
Diodes Incorporated
Ventron No:
3585982-DMP10H400SK3-13
Description:
MOSFET P-CH 100V 9A TO252
ECAD Model:
Datasheet:
DMP10H400SK3-13

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Specifications
Diodes Incorporated DMP10H400SK3-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP10H400SK3-13.
  • Factory Lead Time
    17 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2013
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    42W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Turn On Delay Time
    9.1 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    240m Ω @ 5A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1239pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    9A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    17.5nC @ 10V
  • Rise Time
    14.9ns
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    34.4 ns
  • Turn-Off Delay Time
    57.4 ns
  • Continuous Drain Current (ID)
    9A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    9A
  • Drain to Source Breakdown Voltage
    -100V
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
DMP10H400SK3-13 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1239pF @ 25V.This device conducts a continuous drain current (ID) of 9A, which is the maximum continuous current transistor can conduct.Using VGS=-100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -100V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 9A.When the device is turned off, a turn-off delay time of 57.4 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 9.1 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

DMP10H400SK3-13 Features
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 57.4 ns
a 100V drain to source voltage (Vdss)


DMP10H400SK3-13 Applications
There are a lot of Diodes Incorporated
DMP10H400SK3-13 applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
DMP10H400SK3-13 More Descriptions
Mosfet Bvdss: 61V~100V To252 T&r 2.5K Rohs Compliant: Yes |Diodes Inc. DMP10H400SK3-13
Trans MOSFET P-CH 100V 9A Automotive 3-Pin(2 Tab) TO-252 T/R
Single P-Channel 100 V 300 mOhm 8.4 nC 42 W Silicon SMT Mosfet - TO-252-3
MOSFET, P-CH, -100V, -9A, TO252; Transistor Polarity:P Channel; Continuous Drain Current Id:-9A; Source Voltage Vds:-100V; On Resistance
Power Field-Effect Transistor, 9A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, P-CH, -100V, -9A, TO252; Transistor Polarity: P Channel; Continuous Drain Current Id: -9A; Drain Source Voltage Vds: -100V; On Resistance Rds(on): 0.19ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; Power Dissipation Pd: 42W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Product Comparison
The three parts on the right have similar specifications to DMP10H400SK3-13.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    REACH SVHC
    RoHS Status
    Lead Free
    Additional Feature
    Capacitance
    Terminal Position
    Drain-source On Resistance-Max
    Pbfree Code
    View Compare
  • DMP10H400SK3-13
    DMP10H400SK3-13
    17 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2013
    e3
    Active
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn)
    Other Transistors
    MOSFET (Metal Oxide)
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSSO-G2
    1
    1
    42W Tc
    Single
    ENHANCEMENT MODE
    DRAIN
    9.1 ns
    P-Channel
    SWITCHING
    240m Ω @ 5A, 10V
    3V @ 250μA
    1239pF @ 25V
    9A Tc
    17.5nC @ 10V
    14.9ns
    100V
    4.5V 10V
    ±20V
    34.4 ns
    57.4 ns
    9A
    20V
    9A
    -100V
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
  • DMP1022UFDF-13
    14 Weeks
    Surface Mount
    Surface Mount
    6-UDFN Exposed Pad
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2013
    e4
    Active
    1 (Unlimited)
    6
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    -
    MOSFET (Metal Oxide)
    NO LEAD
    -
    -
    S-PDSO-N6
    1
    1
    730mW Ta
    Single
    ENHANCEMENT MODE
    DRAIN
    25.1 ns
    P-Channel
    SWITCHING
    14.8m Ω @ 4A, 4.5V
    800mV @ 250μA
    2712pF @ 10V
    9.5A Ta
    48.3nC @ 4.5V
    39.8ns
    12V
    1.2V 4.5V
    ±8V
    147 ns
    141 ns
    9.5A
    8V
    -
    -12V
    -
    ROHS3 Compliant
    -
    HIGH RELIABILITY
    2.712nF
    DUAL
    0.026Ohm
    -
  • DMP1055USW-13
    16 Weeks
    -
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    e3
    Active
    1 (Unlimited)
    -
    EAR99
    Matte Tin (Sn)
    -
    MOSFET (Metal Oxide)
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    660mW
    -
    -
    -
    -
    P-Channel
    -
    48m Ω @ 3A, 4.5V
    1V @ 250μA
    1028pF @ 6V
    3.8A Ta
    13nC @ 4.5V
    -
    12V
    1.5V 4.5V
    ±8V
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
  • DMP1081UCB4-7
    17 Weeks
    Surface Mount
    Surface Mount
    4-UFBGA, WLBGA
    4
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2016
    e1
    Active
    1 (Unlimited)
    -
    EAR99
    Tin/Silver/Copper (Sn/Ag/Cu)
    -
    MOSFET (Metal Oxide)
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    820mW Ta
    -
    -
    -
    -
    P-Channel
    -
    80m Ω @ 500mA, 4.5V
    650mV @ 250μA
    350pF @ 6V
    3A Ta 3.3A Ta
    5nC @ 4.5V
    -
    12V
    0.9V 4.5V
    -6V
    -
    -
    3.3A
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    yes
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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