Diodes Incorporated DMP1045U-7
- Part Number:
- DMP1045U-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3554338-DMP1045U-7
- Description:
- MOSFET P-CH 12V 4A SOT23
- Datasheet:
- DMP1045U-7
Diodes Incorporated DMP1045U-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP1045U-7.
- Factory Lead Time15 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2011
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max800mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation800mW
- Turn On Delay Time15.7 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs31m Ω @ 4A, 4.5V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1357pF @ 10V
- Current - Continuous Drain (Id) @ 25°C4A Ta
- Gate Charge (Qg) (Max) @ Vgs15.8nC @ 4.5V
- Rise Time23.3ns
- Drain to Source Voltage (Vdss)12V
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)106.9 ns
- Turn-Off Delay Time91.2 ns
- Continuous Drain Current (ID)4A
- Gate to Source Voltage (Vgs)8V
- Drain Current-Max (Abs) (ID)5.2A
- Drain to Source Breakdown Voltage-12V
- Max Junction Temperature (Tj)150°C
- Height1.1mm
- Length3mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DMP1045U-7 DESCRIPTION
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) while maintaining superior switching performance, which makes the device ideal for high-efficiency powermanagement applications.
DMP1045U-7 FEATURES
Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate
DMP1045U-7 Applications DC-DC Converters Power Management Functions Analog Switch
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) while maintaining superior switching performance, which makes the device ideal for high-efficiency powermanagement applications.
DMP1045U-7 FEATURES
Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate
DMP1045U-7 Applications DC-DC Converters Power Management Functions Analog Switch
DMP1045U-7 More Descriptions
P-Channel 12 V 31 mOhm Surface Mount Enhancement Mode Mosfet - SOT-23-3
Trans MOSFET P-CH 12V 5.2A 3-Pin SOT-23 T/R / MOSFET P-CH 12V 4A SOT23
Low-Power, Triple Current Feedback Operational Amplifier with Disable 16-SSOP -40 to 85
Mosfet Bvdss: 8V~24V Sot23 T&r 3K Rohs Compliant: Yes |Diodes Inc. DMP1045U-7
P-Channel Enhancement MOSFET SOT-23 | Diodes Inc DMP1045U-7
MOSFET, P-CH, -12V, -4A, SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-4A; Source Voltage Vds:-12V; On Resistance
MOSFET, P-CH, -12V, -4A, SOT23; Transistor Polarity: P Channel; Continuous Drain Current Id: -4A; Drain Source Voltage Vds: -12V; On Resistance Rds(on): 0.026ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -550mV; Power Dissipation Pd: 800mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Trans MOSFET P-CH 12V 5.2A 3-Pin SOT-23 T/R / MOSFET P-CH 12V 4A SOT23
Low-Power, Triple Current Feedback Operational Amplifier with Disable 16-SSOP -40 to 85
Mosfet Bvdss: 8V~24V Sot23 T&r 3K Rohs Compliant: Yes |Diodes Inc. DMP1045U-7
P-Channel Enhancement MOSFET SOT-23 | Diodes Inc DMP1045U-7
MOSFET, P-CH, -12V, -4A, SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-4A; Source Voltage Vds:-12V; On Resistance
MOSFET, P-CH, -12V, -4A, SOT23; Transistor Polarity: P Channel; Continuous Drain Current Id: -4A; Drain Source Voltage Vds: -12V; On Resistance Rds(on): 0.026ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -550mV; Power Dissipation Pd: 800mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
The three parts on the right have similar specifications to DMP1045U-7.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageMax Junction Temperature (Tj)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal FinishReference StandardJESD-30 CodeConfigurationDS Breakdown Voltage-MinCase ConnectionView Compare
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DMP1045U-715 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2011e3yesActive1 (Unlimited)3EAR99HIGH RELIABILITYOther TransistorsMOSFET (Metal Oxide)DUALGULL WING26040311800mW TaSingleENHANCEMENT MODE800mW15.7 nsP-ChannelSWITCHING31m Ω @ 4A, 4.5V1V @ 250μA1357pF @ 10V4A Ta15.8nC @ 4.5V23.3ns12V1.8V 4.5V±8V106.9 ns91.2 ns4A8V5.2A-12V150°C1.1mm3mm1.4mmNo SVHCNoROHS3 CompliantLead Free-------
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17 Weeks-Surface MountSurface Mount4-UFBGA, WLBGA4---55°C~150°C TJTape & Reel (TR)2016e1yesActive1 (Unlimited)-EAR99--MOSFET (Metal Oxide)--NOT SPECIFIEDNOT SPECIFIED---820mW Ta----P-Channel-80m Ω @ 500mA, 4.5V650mV @ 250μA350pF @ 6V3A Ta 3.3A Ta5nC @ 4.5V-12V0.9V 4.5V-6V--3.3A---------ROHS3 Compliant-Tin/Silver/Copper (Sn/Ag/Cu)-----
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17 Weeks-Surface MountSurface MountTO-236-3, SC-59, SOT-23-3--SILICON-55°C~150°C TJTape & Reel (TR)2012e3yesActive1 (Unlimited)3EAR99HIGH RELIABILITY-MOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIEDNOT SPECIFIED-1-380mW Ta-ENHANCEMENT MODE--P-ChannelSWITCHING4.2 Ω @ 500mA, 10V3V @ 250μA87pF @ 25V270mA Ta1.8nC @ 10V-100V4V 10V±20V--270mA-0.27A-------ROHS3 Compliant-Matte Tin (Sn)AEC-Q101R-PDSO-G3SINGLE WITH BUILT-IN DIODE100V-
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--Surface MountSurface Mount6-UDFN Exposed Pad6-SILICON-55°C~150°C TJTape & Reel (TR)2012e4yesObsolete1 (Unlimited)3EAR99HIGH RELIABILITYOther TransistorsMOSFET (Metal Oxide)DUAL-26040612660mW TaSingleENHANCEMENT MODE2.03W20 nsP-ChannelSWITCHING16m Ω @ 8.2A, 4.5V800mV @ 250μA2953pF @ 4V9.1A Ta42.6nC @ 5V28ns12V1.2V 4.5V±8V93 ns117 ns9.1A8V---580μm2.05mm2.05mmNo SVHCNoROHS3 CompliantLead FreeNickel/Palladium/Gold (Ni/Pd/Au)-S-PDSO-N3--DRAIN
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