DMP1045U-7

Diodes Incorporated DMP1045U-7

Part Number:
DMP1045U-7
Manufacturer:
Diodes Incorporated
Ventron No:
3554338-DMP1045U-7
Description:
MOSFET P-CH 12V 4A SOT23
ECAD Model:
Datasheet:
DMP1045U-7

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Specifications
Diodes Incorporated DMP1045U-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMP1045U-7.
  • Factory Lead Time
    15 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2011
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    800mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    800mW
  • Turn On Delay Time
    15.7 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    31m Ω @ 4A, 4.5V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1357pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    4A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    15.8nC @ 4.5V
  • Rise Time
    23.3ns
  • Drain to Source Voltage (Vdss)
    12V
  • Drive Voltage (Max Rds On,Min Rds On)
    1.8V 4.5V
  • Vgs (Max)
    ±8V
  • Fall Time (Typ)
    106.9 ns
  • Turn-Off Delay Time
    91.2 ns
  • Continuous Drain Current (ID)
    4A
  • Gate to Source Voltage (Vgs)
    8V
  • Drain Current-Max (Abs) (ID)
    5.2A
  • Drain to Source Breakdown Voltage
    -12V
  • Max Junction Temperature (Tj)
    150°C
  • Height
    1.1mm
  • Length
    3mm
  • Width
    1.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
DMP1045U-7                       DESCRIPTION
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) while maintaining superior switching performance, which makes the device ideal for high-efficiency powermanagement applications.

DMP1045U-7                     FEATURES
 Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  An Automotive-Compliant Part is Available Under Separate
DMP1045U-7                     Applications  DC-DC Converters  Power Management Functions  Analog Switch
DMP1045U-7 More Descriptions
P-Channel 12 V 31 mOhm Surface Mount Enhancement Mode Mosfet - SOT-23-3
Trans MOSFET P-CH 12V 5.2A 3-Pin SOT-23 T/R / MOSFET P-CH 12V 4A SOT23
Low-Power, Triple Current Feedback Operational Amplifier with Disable 16-SSOP -40 to 85
Mosfet Bvdss: 8V~24V Sot23 T&r 3K Rohs Compliant: Yes |Diodes Inc. DMP1045U-7
P-Channel Enhancement MOSFET SOT-23 | Diodes Inc DMP1045U-7
MOSFET, P-CH, -12V, -4A, SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-4A; Source Voltage Vds:-12V; On Resistance
MOSFET, P-CH, -12V, -4A, SOT23; Transistor Polarity: P Channel; Continuous Drain Current Id: -4A; Drain Source Voltage Vds: -12V; On Resistance Rds(on): 0.026ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -550mV; Power Dissipation Pd: 800mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Product Comparison
The three parts on the right have similar specifications to DMP1045U-7.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Max Junction Temperature (Tj)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Finish
    Reference Standard
    JESD-30 Code
    Configuration
    DS Breakdown Voltage-Min
    Case Connection
    View Compare
  • DMP1045U-7
    DMP1045U-7
    15 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2011
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    HIGH RELIABILITY
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    3
    1
    1
    800mW Ta
    Single
    ENHANCEMENT MODE
    800mW
    15.7 ns
    P-Channel
    SWITCHING
    31m Ω @ 4A, 4.5V
    1V @ 250μA
    1357pF @ 10V
    4A Ta
    15.8nC @ 4.5V
    23.3ns
    12V
    1.8V 4.5V
    ±8V
    106.9 ns
    91.2 ns
    4A
    8V
    5.2A
    -12V
    150°C
    1.1mm
    3mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
  • DMP1081UCB4-7
    17 Weeks
    -
    Surface Mount
    Surface Mount
    4-UFBGA, WLBGA
    4
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2016
    e1
    yes
    Active
    1 (Unlimited)
    -
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    820mW Ta
    -
    -
    -
    -
    P-Channel
    -
    80m Ω @ 500mA, 4.5V
    650mV @ 250μA
    350pF @ 6V
    3A Ta 3.3A Ta
    5nC @ 4.5V
    -
    12V
    0.9V 4.5V
    -6V
    -
    -
    3.3A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    Tin/Silver/Copper (Sn/Ag/Cu)
    -
    -
    -
    -
    -
  • DMP10H4D2S-13
    17 Weeks
    -
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    HIGH RELIABILITY
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    -
    1
    -
    380mW Ta
    -
    ENHANCEMENT MODE
    -
    -
    P-Channel
    SWITCHING
    4.2 Ω @ 500mA, 10V
    3V @ 250μA
    87pF @ 25V
    270mA Ta
    1.8nC @ 10V
    -
    100V
    4V 10V
    ±20V
    -
    -
    270mA
    -
    0.27A
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    Matte Tin (Sn)
    AEC-Q101
    R-PDSO-G3
    SINGLE WITH BUILT-IN DIODE
    100V
    -
  • DMP1022UFDE-7
    -
    -
    Surface Mount
    Surface Mount
    6-UDFN Exposed Pad
    6
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    e4
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    HIGH RELIABILITY
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    -
    260
    40
    6
    1
    2
    660mW Ta
    Single
    ENHANCEMENT MODE
    2.03W
    20 ns
    P-Channel
    SWITCHING
    16m Ω @ 8.2A, 4.5V
    800mV @ 250μA
    2953pF @ 4V
    9.1A Ta
    42.6nC @ 5V
    28ns
    12V
    1.2V 4.5V
    ±8V
    93 ns
    117 ns
    9.1A
    8V
    -
    -
    -
    580μm
    2.05mm
    2.05mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    Nickel/Palladium/Gold (Ni/Pd/Au)
    -
    S-PDSO-N3
    -
    -
    DRAIN
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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