Diodes Incorporated DMN3404L-7

Name: DMN3404L-7
Brand: Diodes Incorporated
SKU: 2848378-DMN3404L-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMN3404L-7

Manufacturer:: Diodes Incorporated

Ventron No:: 2848378-DMN3404L-7

Description:: MOSFET N-CH 30V 5.8A SOT-23

ECAD Model:

Datasheet:: DMN3404L-7

Specifications

Diodes Incorporated DMN3404L-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN3404L-7.

Factory Lead Time
15 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
28mOhm
Additional Feature
HIGH RELIABILITY
Subcategory
FET General Purpose Powers
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
720mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.4W
Turn On Delay Time
3.41 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
28m Ω @ 5.8A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
386pF @ 15V
Current - Continuous Drain (Id) @ 25°C
5.8A Ta
Gate Charge (Qg) (Max) @ Vgs
9.2nC @ 10V
Rise Time
6.18ns
Drive Voltage (Max Rds On,Min Rds On)
3V 10V
Vgs (Max)
±20V
Fall Time (Typ)
6.18 ns
Turn-Off Delay Time
13.92 ns
Continuous Drain Current (ID)
4.2A
Threshold Voltage
1.5V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
5.8A
Drain to Source Breakdown Voltage
30V
Max Junction Temperature (Tj)
150°C
Nominal Vgs
1.5 V
Height
1.1mm
Length
2.9mm
Width
1.3mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

DMN3404L-7 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 386pF @ 15V.This device has a continuous drain current (ID) of [4.2A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.A device's drain current is its maximum continuous current, and this device's drain current is 5.8A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 13.92 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 3.41 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 1.5V.Its overall power consumption can be reduced by using drive voltage (3V 10V).

DMN3404L-7 Features
a continuous drain current (ID) of 4.2A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 13.92 ns
a threshold voltage of 1.5V

DMN3404L-7 Applications
There are a lot of Diodes Incorporated
DMN3404L-7 applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

DMN3404L-7 More Descriptions

N-Channel 30 V 28 mOhm Surface Mount Enhancement Mode Mosfet - SOT-23-3
Trans MOSFET N-CH 30V 5.8A Automotive 3-Pin SOT-23 T/R
MOSFET N-Channel 30V 5.8A SOT23 | Diodes Inc DMN3404L-7
MOSFET,N CH,30V,5.8A,SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:4.2A; Source Voltage Vds:30V; On Resistance
MOSFET,N CH,30V,5.8A,SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.2A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 1.4W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: 5.8A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Voltage Vgs Max: 20V

Product Comparison

The three parts on the right have similar specifications to DMN3404L-7.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Additional Feature

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Max Junction Temperature (Tj)

Nominal Vgs

Height

Length

Width

REACH SVHC

RoHS Status

Lead Free

Terminal Finish

Drain to Source Voltage (Vdss)

JESD-30 Code

Case Connection

JEDEC-95 Code

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

Radiation Hardening

Configuration

View Compare
DMN3404L-7

Diodes Incorporated

15 Weeks

Tin

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

7.994566mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2013

e3

yes

Active

1 (Unlimited)

3

EAR99

28mOhm

HIGH RELIABILITY

FET General Purpose Powers

MOSFET (Metal Oxide)

DUAL

GULL WING

260

40

3

Not Qualified

1

1

720mW Ta

Single

ENHANCEMENT MODE

1.4W

3.41 ns

N-Channel

SWITCHING

28m Ω @ 5.8A, 10V

2V @ 250μA

386pF @ 15V

5.8A Ta

9.2nC @ 10V

6.18ns

3V 10V

±20V

6.18 ns

13.92 ns

4.2A

1.5V

20V

5.8A

30V

150°C

1.5 V

1.1mm

2.9mm

1.3mm

No SVHC

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-
DMN3023L-13

Diodes Incorporated

15 Weeks

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-

-55°C~155°C TJ

Tape & Reel (TR)

2015

e3

yes

Active

1 (Unlimited)

-

EAR99

-

-

-

MOSFET (Metal Oxide)

-

-

NOT SPECIFIED

NOT SPECIFIED

-

-

-

-

900mW Ta

-

-

-

-

N-Channel

-

25m Ω @ 4A, 10V

1.8V @ 250μA

873pF @ 15V

6.2A Ta

18.4nC @ 10V

-

2.5V 10V

±20V

-

-

6.2A

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

Matte Tin (Sn)

30V

-

-

-

-

-

-

-

DMN3404L-7 vs DMN3023L-13
DMN3024LK3-13

Diodes Incorporated

17 Weeks

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

3.949996g

SILICON

-55°C~150°C TJ

Cut Tape (CT)

-

e3

no

Active

1 (Unlimited)

2

EAR99

-

-

FET General Purpose Power

MOSFET (Metal Oxide)

-

GULL WING

260

40

3

-

1

1

2.17W Ta

Single

ENHANCEMENT MODE

8.9W

2.9 ns

N-Channel

SWITCHING

24m Ω @ 7A, 10V

3V @ 250μA

608pF @ 15V

9.78A Ta

12.9nC @ 10V

3.3ns

4.5V 10V

±20V

8 ns

16 ns

14.4A

-

20V

9.78A

-

-

-

2.39mm

6.73mm

6.22mm

No SVHC

ROHS3 Compliant

-

Matte Tin (Sn)

30V

R-PSSO-G2

DRAIN

TO-252AA

0.024Ohm

46.5A

No

-

DMN3404L-7 vs DMN3024LK3-13
DMN3730UFB4-7

Diodes Incorporated

17 Weeks

Gold

Surface Mount

Surface Mount

3-XFDFN

3

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2012

e4

yes

Active

1 (Unlimited)

3

EAR99

-

HIGH RELIABILITY

FET General Purpose Powers

MOSFET (Metal Oxide)

BOTTOM

NO LEAD

260

40

3

Not Qualified

1

1

470mW Ta

-

ENHANCEMENT MODE

690mW

3.5 ns

N-Channel

SWITCHING

460m Ω @ 200mA, 4.5V

950mV @ 250μA

64.3pF @ 25V

750mA Ta

1.6nC @ 4.5V

2.8ns

1.8V 4.5V

±8V

13 ns

38 ns

910mA

450mV

8V

0.75A

30V

-

-

350μm

1.08mm

675μm

No SVHC

ROHS3 Compliant

Lead Free

-

-

-

DRAIN

-

0.46Ohm

-

-

SINGLE WITH BUILT-IN DIODE

DMN3404L-7 vs DMN3730UFB4-7