Diodes Incorporated DMN3730UFB4-7

Name: DMN3730UFB4-7
Brand: Diodes Incorporated
SKU: 2849807-DMN3730UFB4-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMN3730UFB4-7

Manufacturer:: Diodes Incorporated

Ventron No:: 2849807-DMN3730UFB4-7

Description:: MOSFET N-CH 30V 750MA DFN

ECAD Model:

Datasheet:: DMN3730UFB4-7

Specifications

Diodes Incorporated DMN3730UFB4-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN3730UFB4-7.

Factory Lead Time
17 Weeks
Contact Plating
Gold
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-XFDFN
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
HIGH RELIABILITY
Subcategory
FET General Purpose Powers
Technology
MOSFET (Metal Oxide)
Terminal Position
BOTTOM
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Number of Channels
1
Power Dissipation-Max
470mW Ta
Operating Mode
ENHANCEMENT MODE
Power Dissipation
690mW
Case Connection
DRAIN
Turn On Delay Time
3.5 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
460m Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id
950mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
64.3pF @ 25V
Current - Continuous Drain (Id) @ 25°C
750mA Ta
Gate Charge (Qg) (Max) @ Vgs
1.6nC @ 4.5V
Rise Time
2.8ns
Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V
Vgs (Max)
±8V
Fall Time (Typ)
13 ns
Turn-Off Delay Time
38 ns
Continuous Drain Current (ID)
910mA
Threshold Voltage
450mV
Gate to Source Voltage (Vgs)
8V
Drain Current-Max (Abs) (ID)
0.75A
Drain-source On Resistance-Max
0.46Ohm
Drain to Source Breakdown Voltage
30V
Height
350μm
Length
1.08mm
Width
675μm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

DMN3730UFB4-7 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 64.3pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 910mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=30V. And this device has 30V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 0.75A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 38 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 3.5 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 8V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 450mV threshold voltage. By using drive voltage (1.8V 4.5V), this device helps reduce its overall power consumption.

DMN3730UFB4-7 Features
a continuous drain current (ID) of 910mA
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 38 ns
a threshold voltage of 450mV

DMN3730UFB4-7 Applications
There are a lot of Diodes Incorporated
DMN3730UFB4-7 applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

DMN3730UFB4-7 More Descriptions

Single N-Channel 30 V 730 mOhm 1.6 nC 0.69 W Silicon SMT Mosfet - XFDFN-3
Trans MOSFET N-CH 30V 0.91A Automotive 3-Pin X2-DFN T/R
MOSFET,N CH,30V,0.75A,DFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 910mA; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.46ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 450mV; Power Dissipation Pd: 470mW; Transistor Case Style: DFN; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: 900mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Voltage Vgs Max: 8V

Product Comparison

The three parts on the right have similar specifications to DMN3730UFB4-7.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Additional Feature

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Number of Elements

Configuration

Number of Channels

Power Dissipation-Max

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Height

Length

Width

REACH SVHC

RoHS Status

Lead Free

Weight

Terminal Finish

Pulsed Drain Current-Max (IDM)

Radiation Hardening

Drain to Source Voltage (Vdss)

JESD-30 Code

Element Configuration

JEDEC-95 Code

View Compare
DMN3730UFB4-7

Diodes Incorporated

17 Weeks

Gold

Surface Mount

Surface Mount

3-XFDFN

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2012

e4

yes

Active

1 (Unlimited)

3

EAR99

HIGH RELIABILITY

FET General Purpose Powers

MOSFET (Metal Oxide)

BOTTOM

NO LEAD

260

40

3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

1

470mW Ta

ENHANCEMENT MODE

690mW

DRAIN

3.5 ns

N-Channel

SWITCHING

460m Ω @ 200mA, 4.5V

950mV @ 250μA

64.3pF @ 25V

750mA Ta

1.6nC @ 4.5V

2.8ns

1.8V 4.5V

±8V

13 ns

38 ns

910mA

450mV

8V

0.75A

0.46Ohm

30V

350μm

1.08mm

675μm

No SVHC

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-
DMN3010LSS-13

Diodes Incorporated

16 Weeks

-

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2008

e3

yes

Active

1 (Unlimited)

8

EAR99

HIGH RELIABILITY

FET General Purpose Powers

MOSFET (Metal Oxide)

DUAL

GULL WING

260

40

8

-

1

SINGLE WITH BUILT-IN DIODE

1

2.5W Ta

ENHANCEMENT MODE

2.5W

-

5.6 ns

N-Channel

SWITCHING

9m Ω @ 16A, 10V

2V @ 250μA

2096pF @ 15V

16A Ta

43.7nC @ 10V

8ns

4.5V 10V

±20V

27 ns

45 ns

16A

-

20V

-

0.009Ohm

30V

1.5mm

5.3mm

4.1mm

No SVHC

ROHS3 Compliant

-

850.995985mg

Matte Tin (Sn)

64A

No

-

-

-

-

DMN3730UFB4-7 vs DMN3010LSS-13
DMN33D8LT-7

Diodes Incorporated

22 Weeks

-

Surface Mount

Surface Mount

SOT-523

-

-

-55°C~150°C TJ

Tape & Reel (TR)

2014

e3

-

Active

1 (Unlimited)

-

EAR99

-

-

MOSFET (Metal Oxide)

-

-

NOT SPECIFIED

NOT SPECIFIED

-

-

-

-

-

240mW Ta

-

-

-

-

N-Channel

-

5 Ω @ 10mA, 4V

1.5V @ 100μA

48pF @ 5V

115mA Ta

0.55nC @ 10V

-

2.5V 4V

±20V

-

-

115mA

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

Matte Tin (Sn)

-

-

30V

-

-

-

DMN3730UFB4-7 vs DMN33D8LT-7
DMN3024LK3-13

Diodes Incorporated

17 Weeks

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

SILICON

-55°C~150°C TJ

Cut Tape (CT)

-

e3

no

Active

1 (Unlimited)

2

EAR99

-

FET General Purpose Power

MOSFET (Metal Oxide)

-

GULL WING

260

40

3

-

1

-

1

2.17W Ta

ENHANCEMENT MODE

8.9W

DRAIN

2.9 ns

N-Channel

SWITCHING

24m Ω @ 7A, 10V

3V @ 250μA

608pF @ 15V

9.78A Ta

12.9nC @ 10V

3.3ns

4.5V 10V

±20V

8 ns

16 ns

14.4A

-

20V

9.78A

0.024Ohm

-

2.39mm

6.73mm

6.22mm

No SVHC

ROHS3 Compliant

-

3.949996g

Matte Tin (Sn)

46.5A

No

30V

R-PSSO-G2

Single

TO-252AA

DMN3730UFB4-7 vs DMN3024LK3-13