DMN3010LSS-13

Diodes Incorporated DMN3010LSS-13

Part Number:
DMN3010LSS-13
Manufacturer:
Diodes Incorporated
Ventron No:
3070665-DMN3010LSS-13
Description:
MOSFET N-CH 30V 16A 8-SOIC
ECAD Model:
Datasheet:
DMN3010LSS-13

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Specifications
Diodes Incorporated DMN3010LSS-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN3010LSS-13.
  • Factory Lead Time
    16 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Weight
    850.995985mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2008
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    FET General Purpose Powers
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    8
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Number of Channels
    1
  • Power Dissipation-Max
    2.5W Ta
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5W
  • Turn On Delay Time
    5.6 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    9m Ω @ 16A, 10V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2096pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    16A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    43.7nC @ 10V
  • Rise Time
    8ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    27 ns
  • Turn-Off Delay Time
    45 ns
  • Continuous Drain Current (ID)
    16A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.009Ohm
  • Drain to Source Breakdown Voltage
    30V
  • Pulsed Drain Current-Max (IDM)
    64A
  • Height
    1.5mm
  • Length
    5.3mm
  • Width
    4.1mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
DMN3010LSS-13 Overview
A device's maximum input capacitance is 2096pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 16A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 45 ns.Its maximum pulsed drain current is 64A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 5.6 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

DMN3010LSS-13 Features
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 64A.


DMN3010LSS-13 Applications
There are a lot of Diodes Incorporated
DMN3010LSS-13 applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
DMN3010LSS-13 More Descriptions
Trans MOSFET N-CH 30V 16A Automotive 8-Pin SOP T/R
DMN3010 Series N-Channel 30 V 16A 2.5W Surface Mount MOSFET SOP-8
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGSDiodes Inc SCT
Product Comparison
The three parts on the right have similar specifications to DMN3010LSS-13.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Configuration
    Number of Channels
    Power Dissipation-Max
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Drain to Source Voltage (Vdss)
    JESD-30 Code
    Element Configuration
    Case Connection
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Contact Plating
    Qualification Status
    Threshold Voltage
    Lead Free
    View Compare
  • DMN3010LSS-13
    DMN3010LSS-13
    16 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    850.995985mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2008
    e3
    yes
    Active
    1 (Unlimited)
    8
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    8
    1
    SINGLE WITH BUILT-IN DIODE
    1
    2.5W Ta
    ENHANCEMENT MODE
    2.5W
    5.6 ns
    N-Channel
    SWITCHING
    9m Ω @ 16A, 10V
    2V @ 250μA
    2096pF @ 15V
    16A Ta
    43.7nC @ 10V
    8ns
    4.5V 10V
    ±20V
    27 ns
    45 ns
    16A
    20V
    0.009Ohm
    30V
    64A
    1.5mm
    5.3mm
    4.1mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • DMN3023L-13
    15 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    -
    -55°C~155°C TJ
    Tape & Reel (TR)
    2015
    e3
    yes
    Active
    1 (Unlimited)
    -
    EAR99
    Matte Tin (Sn)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    -
    900mW Ta
    -
    -
    -
    N-Channel
    -
    25m Ω @ 4A, 10V
    1.8V @ 250μA
    873pF @ 15V
    6.2A Ta
    18.4nC @ 10V
    -
    2.5V 10V
    ±20V
    -
    -
    6.2A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • DMN3024LK3-13
    17 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    3
    3.949996g
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    -
    e3
    no
    Active
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn)
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    GULL WING
    260
    40
    3
    1
    -
    1
    2.17W Ta
    ENHANCEMENT MODE
    8.9W
    2.9 ns
    N-Channel
    SWITCHING
    24m Ω @ 7A, 10V
    3V @ 250μA
    608pF @ 15V
    9.78A Ta
    12.9nC @ 10V
    3.3ns
    4.5V 10V
    ±20V
    8 ns
    16 ns
    14.4A
    20V
    0.024Ohm
    -
    46.5A
    2.39mm
    6.73mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    30V
    R-PSSO-G2
    Single
    DRAIN
    TO-252AA
    9.78A
    -
    -
    -
    -
  • DMN3730UFB4-7
    17 Weeks
    Surface Mount
    Surface Mount
    3-XFDFN
    3
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    e4
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    HIGH RELIABILITY
    FET General Purpose Powers
    MOSFET (Metal Oxide)
    BOTTOM
    NO LEAD
    260
    40
    3
    1
    SINGLE WITH BUILT-IN DIODE
    1
    470mW Ta
    ENHANCEMENT MODE
    690mW
    3.5 ns
    N-Channel
    SWITCHING
    460m Ω @ 200mA, 4.5V
    950mV @ 250μA
    64.3pF @ 25V
    750mA Ta
    1.6nC @ 4.5V
    2.8ns
    1.8V 4.5V
    ±8V
    13 ns
    38 ns
    910mA
    8V
    0.46Ohm
    30V
    -
    350μm
    1.08mm
    675μm
    No SVHC
    -
    ROHS3 Compliant
    -
    -
    -
    DRAIN
    -
    0.75A
    Gold
    Not Qualified
    450mV
    Lead Free
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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