Diodes Incorporated DMN3010LSS-13
- Part Number:
- DMN3010LSS-13
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 3070665-DMN3010LSS-13
- Description:
- MOSFET N-CH 30V 16A 8-SOIC
- Datasheet:
- DMN3010LSS-13
Diodes Incorporated DMN3010LSS-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN3010LSS-13.
- Factory Lead Time16 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Weight850.995985mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- SubcategoryFET General Purpose Powers
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count8
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Number of Channels1
- Power Dissipation-Max2.5W Ta
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.5W
- Turn On Delay Time5.6 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs9m Ω @ 16A, 10V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2096pF @ 15V
- Current - Continuous Drain (Id) @ 25°C16A Ta
- Gate Charge (Qg) (Max) @ Vgs43.7nC @ 10V
- Rise Time8ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)27 ns
- Turn-Off Delay Time45 ns
- Continuous Drain Current (ID)16A
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.009Ohm
- Drain to Source Breakdown Voltage30V
- Pulsed Drain Current-Max (IDM)64A
- Height1.5mm
- Length5.3mm
- Width4.1mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
DMN3010LSS-13 Overview
A device's maximum input capacitance is 2096pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 16A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 45 ns.Its maximum pulsed drain current is 64A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 5.6 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
DMN3010LSS-13 Features
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 64A.
DMN3010LSS-13 Applications
There are a lot of Diodes Incorporated
DMN3010LSS-13 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 2096pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 16A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 45 ns.Its maximum pulsed drain current is 64A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 5.6 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
DMN3010LSS-13 Features
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 64A.
DMN3010LSS-13 Applications
There are a lot of Diodes Incorporated
DMN3010LSS-13 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
DMN3010LSS-13 More Descriptions
Trans MOSFET N-CH 30V 16A Automotive 8-Pin SOP T/R
DMN3010 Series N-Channel 30 V 16A 2.5W Surface Mount MOSFET SOP-8
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGSDiodes Inc SCT
DMN3010 Series N-Channel 30 V 16A 2.5W Surface Mount MOSFET SOP-8
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGSDiodes Inc SCT
The three parts on the right have similar specifications to DMN3010LSS-13.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsConfigurationNumber of ChannelsPower Dissipation-MaxOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusDrain to Source Voltage (Vdss)JESD-30 CodeElement ConfigurationCase ConnectionJEDEC-95 CodeDrain Current-Max (Abs) (ID)Contact PlatingQualification StatusThreshold VoltageLead FreeView Compare
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DMN3010LSS-1316 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8850.995985mgSILICON-55°C~150°C TJTape & Reel (TR)2008e3yesActive1 (Unlimited)8EAR99Matte Tin (Sn)HIGH RELIABILITYFET General Purpose PowersMOSFET (Metal Oxide)DUALGULL WING2604081SINGLE WITH BUILT-IN DIODE12.5W TaENHANCEMENT MODE2.5W5.6 nsN-ChannelSWITCHING9m Ω @ 16A, 10V2V @ 250μA2096pF @ 15V16A Ta43.7nC @ 10V8ns4.5V 10V±20V27 ns45 ns16A20V0.009Ohm30V64A1.5mm5.3mm4.1mmNo SVHCNoROHS3 Compliant-----------
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15 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3----55°C~155°C TJTape & Reel (TR)2015e3yesActive1 (Unlimited)-EAR99Matte Tin (Sn)--MOSFET (Metal Oxide)--NOT SPECIFIEDNOT SPECIFIED----900mW Ta---N-Channel-25m Ω @ 4A, 10V1.8V @ 250μA873pF @ 15V6.2A Ta18.4nC @ 10V-2.5V 10V±20V--6.2A---------ROHS3 Compliant30V---------
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17 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-6333.949996gSILICON-55°C~150°C TJCut Tape (CT)-e3noActive1 (Unlimited)2EAR99Matte Tin (Sn)-FET General Purpose PowerMOSFET (Metal Oxide)-GULL WING2604031-12.17W TaENHANCEMENT MODE8.9W2.9 nsN-ChannelSWITCHING24m Ω @ 7A, 10V3V @ 250μA608pF @ 15V9.78A Ta12.9nC @ 10V3.3ns4.5V 10V±20V8 ns16 ns14.4A20V0.024Ohm-46.5A2.39mm6.73mm6.22mmNo SVHCNoROHS3 Compliant30VR-PSSO-G2SingleDRAINTO-252AA9.78A----
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17 WeeksSurface MountSurface Mount3-XFDFN3-SILICON-55°C~150°C TJTape & Reel (TR)2012e4yesActive1 (Unlimited)3EAR99-HIGH RELIABILITYFET General Purpose PowersMOSFET (Metal Oxide)BOTTOMNO LEAD2604031SINGLE WITH BUILT-IN DIODE1470mW TaENHANCEMENT MODE690mW3.5 nsN-ChannelSWITCHING460m Ω @ 200mA, 4.5V950mV @ 250μA64.3pF @ 25V750mA Ta1.6nC @ 4.5V2.8ns1.8V 4.5V±8V13 ns38 ns910mA8V0.46Ohm30V-350μm1.08mm675μmNo SVHC-ROHS3 Compliant---DRAIN-0.75AGoldNot Qualified450mVLead Free
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