Diodes Incorporated DMN30H4D0LFDE-7
- Part Number:
- DMN30H4D0LFDE-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2481883-DMN30H4D0LFDE-7
- Description:
- MOSFET N-CH 300V .55A 6UDFN
- Datasheet:
- DMN30H4D0LFDE-7
Diodes Incorporated DMN30H4D0LFDE-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN30H4D0LFDE-7.
- Factory Lead Time22 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-UDFN Exposed Pad
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2014
- JESD-609 Codee4
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishNickel/Palladium/Gold (Ni/Pd/Au)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max630mW Ta
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs4 Ω @ 300mA, 10V
- Vgs(th) (Max) @ Id2.8V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds187.3pF @ 25V
- Current - Continuous Drain (Id) @ 25°C550mA Ta
- Gate Charge (Qg) (Max) @ Vgs7.6nC @ 10V
- Drain to Source Voltage (Vdss)300V
- Drive Voltage (Max Rds On,Min Rds On)2.7V 10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)550mA
- RoHS StatusROHS3 Compliant
DMN30H4D0LFDE-7 Overview
A device's maximal input capacitance is 187.3pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 550mA, which represents the maximum continuous current it can conduct.This transistor requires a 300V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (2.7V 10V).
DMN30H4D0LFDE-7 Features
a continuous drain current (ID) of 550mA
a 300V drain to source voltage (Vdss)
DMN30H4D0LFDE-7 Applications
There are a lot of Diodes Incorporated
DMN30H4D0LFDE-7 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 187.3pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 550mA, which represents the maximum continuous current it can conduct.This transistor requires a 300V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (2.7V 10V).
DMN30H4D0LFDE-7 Features
a continuous drain current (ID) of 550mA
a 300V drain to source voltage (Vdss)
DMN30H4D0LFDE-7 Applications
There are a lot of Diodes Incorporated
DMN30H4D0LFDE-7 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
DMN30H4D0LFDE-7 More Descriptions
Mosfet, N-Ch, 300V, 0.55A, U-Dfn2020 Rohs Compliant: Yes |Diodes Inc. DMN30H4D0LFDE-7
Trans MOSFET N-CH 300V 0.55A 6-Pin UDFN EP T/R
N-CHANNEL ENHANCEMENT MODE MOSFET, 300 V, RoHSDiodes Inc SCT
MOSFET N-Ch Enh Mode FET 300Vds 20Vgs FET
MOSFET, N-CH, 300V, 0.55A, U-DFN2020;
Transistors - FETs, MOSFETs - Single 1 (Unlimited) 6-UDFN Exposed Pad Surface Mount MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 4 Ω @ 300mA, 10V 550mA (Ta) -55°C ~ 150°C (TJ) MOSFET N-CH 300V .55A 6UDFN
Trans MOSFET N-CH 300V 0.55A 6-Pin UDFN EP T/R
N-CHANNEL ENHANCEMENT MODE MOSFET, 300 V, RoHSDiodes Inc SCT
MOSFET N-Ch Enh Mode FET 300Vds 20Vgs FET
MOSFET, N-CH, 300V, 0.55A, U-DFN2020;
Transistors - FETs, MOSFETs - Single 1 (Unlimited) 6-UDFN Exposed Pad Surface Mount MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 4 Ω @ 300mA, 10V 550mA (Ta) -55°C ~ 150°C (TJ) MOSFET N-CH 300V .55A 6UDFN
The three parts on the right have similar specifications to DMN30H4D0LFDE-7.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)ECCN CodeTerminal FinishTechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)RoHS StatusNumber of PinsWeightTransistor Element MaterialPbfree CodeNumber of TerminationsAdditional FeatureSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsConfigurationNumber of ChannelsOperating ModePower DissipationTurn On Delay TimeTransistor ApplicationRise TimeFall Time (Typ)Turn-Off Delay TimeGate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)HeightLengthWidthREACH SVHCRadiation HardeningElement ConfigurationLead FreeView Compare
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DMN30H4D0LFDE-722 WeeksSurface MountSurface Mount6-UDFN Exposed Pad-55°C~150°C TJTape & Reel (TR)2014e4Active1 (Unlimited)EAR99Nickel/Palladium/Gold (Ni/Pd/Au)MOSFET (Metal Oxide)630mW TaN-Channel4 Ω @ 300mA, 10V2.8V @ 250μA187.3pF @ 25V550mA Ta7.6nC @ 10V300V2.7V 10V±20V550mAROHS3 Compliant----------------------------------
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16 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)-55°C~150°C TJTape & Reel (TR)2008e3Active1 (Unlimited)EAR99Matte Tin (Sn)MOSFET (Metal Oxide)2.5W TaN-Channel9m Ω @ 16A, 10V2V @ 250μA2096pF @ 15V16A Ta43.7nC @ 10V-4.5V 10V±20V16AROHS3 Compliant8850.995985mgSILICONyes8HIGH RELIABILITYFET General Purpose PowersDUALGULL WING2604081SINGLE WITH BUILT-IN DIODE1ENHANCEMENT MODE2.5W5.6 nsSWITCHING8ns27 ns45 ns20V0.009Ohm30V64A1.5mm5.3mm4.1mmNo SVHCNo--
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22 WeeksSurface MountSurface MountSOT-523-55°C~150°C TJTape & Reel (TR)2014e3Active1 (Unlimited)EAR99Matte Tin (Sn)MOSFET (Metal Oxide)240mW TaN-Channel5 Ω @ 10mA, 4V1.5V @ 100μA48pF @ 5V115mA Ta0.55nC @ 10V30V2.5V 4V±20V115mAROHS3 Compliant---------NOT SPECIFIEDNOT SPECIFIED----------------------
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23 WeeksSurface MountSurface Mount8-PowerVDFN-55°C~150°C TJTape & Reel (TR)2015e3Active1 (Unlimited)EAR99Matte Tin (Sn)MOSFET (Metal Oxide)900mW TaN-Channel8.5m Ω @ 18A, 10V2.5V @ 250μA2075pF @ 15V11A Ta 30A Tc37nC @ 10V-4.5V 10V±20V30AROHS3 Compliant872.007789mg------------1--4.5 ns-19.6ns10.7 ns31 ns20V-30V-850μm3.35mm3.35mm-NoSingleLead Free
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