DMN30H4D0LFDE-7

Diodes Incorporated DMN30H4D0LFDE-7

Part Number:
DMN30H4D0LFDE-7
Manufacturer:
Diodes Incorporated
Ventron No:
2481883-DMN30H4D0LFDE-7
Description:
MOSFET N-CH 300V .55A 6UDFN
ECAD Model:
Datasheet:
DMN30H4D0LFDE-7

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Comments
Specifications
Diodes Incorporated DMN30H4D0LFDE-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN30H4D0LFDE-7.
  • Factory Lead Time
    22 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    6-UDFN Exposed Pad
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2014
  • JESD-609 Code
    e4
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Terminal Finish
    Nickel/Palladium/Gold (Ni/Pd/Au)
  • Technology
    MOSFET (Metal Oxide)
  • Power Dissipation-Max
    630mW Ta
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    4 Ω @ 300mA, 10V
  • Vgs(th) (Max) @ Id
    2.8V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    187.3pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    550mA Ta
  • Gate Charge (Qg) (Max) @ Vgs
    7.6nC @ 10V
  • Drain to Source Voltage (Vdss)
    300V
  • Drive Voltage (Max Rds On,Min Rds On)
    2.7V 10V
  • Vgs (Max)
    ±20V
  • Continuous Drain Current (ID)
    550mA
  • RoHS Status
    ROHS3 Compliant
Description
DMN30H4D0LFDE-7 Overview
A device's maximal input capacitance is 187.3pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 550mA, which represents the maximum continuous current it can conduct.This transistor requires a 300V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (2.7V 10V).

DMN30H4D0LFDE-7 Features
a continuous drain current (ID) of 550mA
a 300V drain to source voltage (Vdss)


DMN30H4D0LFDE-7 Applications
There are a lot of Diodes Incorporated
DMN30H4D0LFDE-7 applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
DMN30H4D0LFDE-7 More Descriptions
Mosfet, N-Ch, 300V, 0.55A, U-Dfn2020 Rohs Compliant: Yes |Diodes Inc. DMN30H4D0LFDE-7
Trans MOSFET N-CH 300V 0.55A 6-Pin UDFN EP T/R
N-CHANNEL ENHANCEMENT MODE MOSFET, 300 V, RoHSDiodes Inc SCT
MOSFET N-Ch Enh Mode FET 300Vds 20Vgs FET
MOSFET, N-CH, 300V, 0.55A, U-DFN2020;
Transistors - FETs, MOSFETs - Single 1 (Unlimited) 6-UDFN Exposed Pad Surface Mount MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 4 Ω @ 300mA, 10V 550mA (Ta) -55°C ~ 150°C (TJ) MOSFET N-CH 300V .55A 6UDFN
Product Comparison
The three parts on the right have similar specifications to DMN30H4D0LFDE-7.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Terminal Finish
    Technology
    Power Dissipation-Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Continuous Drain Current (ID)
    RoHS Status
    Number of Pins
    Weight
    Transistor Element Material
    Pbfree Code
    Number of Terminations
    Additional Feature
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Configuration
    Number of Channels
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    Transistor Application
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Element Configuration
    Lead Free
    View Compare
  • DMN30H4D0LFDE-7
    DMN30H4D0LFDE-7
    22 Weeks
    Surface Mount
    Surface Mount
    6-UDFN Exposed Pad
    -55°C~150°C TJ
    Tape & Reel (TR)
    2014
    e4
    Active
    1 (Unlimited)
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    MOSFET (Metal Oxide)
    630mW Ta
    N-Channel
    4 Ω @ 300mA, 10V
    2.8V @ 250μA
    187.3pF @ 25V
    550mA Ta
    7.6nC @ 10V
    300V
    2.7V 10V
    ±20V
    550mA
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • DMN3010LSS-13
    16 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -55°C~150°C TJ
    Tape & Reel (TR)
    2008
    e3
    Active
    1 (Unlimited)
    EAR99
    Matte Tin (Sn)
    MOSFET (Metal Oxide)
    2.5W Ta
    N-Channel
    9m Ω @ 16A, 10V
    2V @ 250μA
    2096pF @ 15V
    16A Ta
    43.7nC @ 10V
    -
    4.5V 10V
    ±20V
    16A
    ROHS3 Compliant
    8
    850.995985mg
    SILICON
    yes
    8
    HIGH RELIABILITY
    FET General Purpose Powers
    DUAL
    GULL WING
    260
    40
    8
    1
    SINGLE WITH BUILT-IN DIODE
    1
    ENHANCEMENT MODE
    2.5W
    5.6 ns
    SWITCHING
    8ns
    27 ns
    45 ns
    20V
    0.009Ohm
    30V
    64A
    1.5mm
    5.3mm
    4.1mm
    No SVHC
    No
    -
    -
  • DMN33D8LT-7
    22 Weeks
    Surface Mount
    Surface Mount
    SOT-523
    -55°C~150°C TJ
    Tape & Reel (TR)
    2014
    e3
    Active
    1 (Unlimited)
    EAR99
    Matte Tin (Sn)
    MOSFET (Metal Oxide)
    240mW Ta
    N-Channel
    5 Ω @ 10mA, 4V
    1.5V @ 100μA
    48pF @ 5V
    115mA Ta
    0.55nC @ 10V
    30V
    2.5V 4V
    ±20V
    115mA
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • DMN3010LFG-7
    23 Weeks
    Surface Mount
    Surface Mount
    8-PowerVDFN
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    e3
    Active
    1 (Unlimited)
    EAR99
    Matte Tin (Sn)
    MOSFET (Metal Oxide)
    900mW Ta
    N-Channel
    8.5m Ω @ 18A, 10V
    2.5V @ 250μA
    2075pF @ 15V
    11A Ta 30A Tc
    37nC @ 10V
    -
    4.5V 10V
    ±20V
    30A
    ROHS3 Compliant
    8
    72.007789mg
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    1
    -
    -
    4.5 ns
    -
    19.6ns
    10.7 ns
    31 ns
    20V
    -
    30V
    -
    850μm
    3.35mm
    3.35mm
    -
    No
    Single
    Lead Free
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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