DMN3026LVT-7

Diodes Incorporated DMN3026LVT-7

Part Number:
DMN3026LVT-7
Manufacturer:
Diodes Incorporated
Ventron No:
2479239-DMN3026LVT-7
Description:
MOSFET N-CH 30V 6.6A 6-SOT26
ECAD Model:
Datasheet:
DMN3026LVT-7

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Specifications
Diodes Incorporated DMN3026LVT-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN3026LVT-7.
  • Factory Lead Time
    23 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-23-6 Thin, TSOT-23-6
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2014
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Capacitance
    643pF
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PDSO-G6
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    1.2W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Turn On Delay Time
    2.2 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    23m Ω @ 6.5A, 10V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    643pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    6.6A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    12.5nC @ 10V
  • Rise Time
    2.5ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    3 ns
  • Turn-Off Delay Time
    12.1 ns
  • Continuous Drain Current (ID)
    6.6A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.023Ohm
  • Drain to Source Breakdown Voltage
    30V
  • RoHS Status
    ROHS3 Compliant
Description
DMN3026LVT-7 Overview
A device's maximum input capacitance is 643pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 6.6A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 12.1 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 2.2 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

DMN3026LVT-7 Features
a continuous drain current (ID) of 6.6A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 12.1 ns


DMN3026LVT-7 Applications
There are a lot of Diodes Incorporated
DMN3026LVT-7 applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
DMN3026LVT-7 More Descriptions
Mosfet, N-Ch, 30V, 6.6A, Tsot-26 Rohs Compliant: Yes |Diodes Inc. DMN3026LVT-7
Single N-Channel 30 V 30 mOhm 12.5 nC 1.5 W Silicon Mosfet - TSOT-26
Trans MOSFET N-CH 30V 6.6A 6-Pin TSOT-26 T/R
30V 6.6A 1.2W 23mΩ@6.5A,10V null SOT-23-6 MOSFETs ROHS
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGSDiodes Inc SCT
Small Signal Field-Effect Transistor, 6.6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Product Comparison
The three parts on the right have similar specifications to DMN3026LVT-7.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Capacitance
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    RoHS Status
    Number of Pins
    Weight
    Pbfree Code
    Subcategory
    Pin Count
    Power Dissipation
    Case Connection
    Drain to Source Voltage (Vdss)
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Pulsed Drain Current-Max (IDM)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Configuration
    DS Breakdown Voltage-Min
    Feedback Cap-Max (Crss)
    Contact Plating
    Additional Feature
    Qualification Status
    Threshold Voltage
    Lead Free
    View Compare
  • DMN3026LVT-7
    DMN3026LVT-7
    23 Weeks
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2014
    e3
    Active
    1 (Unlimited)
    6
    EAR99
    Matte Tin (Sn)
    643pF
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    R-PDSO-G6
    1
    1
    1.2W Ta
    Single
    ENHANCEMENT MODE
    2.2 ns
    N-Channel
    SWITCHING
    23m Ω @ 6.5A, 10V
    2V @ 250μA
    643pF @ 15V
    6.6A Ta
    12.5nC @ 10V
    2.5ns
    4.5V 10V
    ±20V
    3 ns
    12.1 ns
    6.6A
    20V
    0.023Ohm
    30V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • DMN3024LK3-13
    17 Weeks
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    -
    e3
    Active
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn)
    -
    MOSFET (Metal Oxide)
    -
    GULL WING
    260
    40
    R-PSSO-G2
    1
    1
    2.17W Ta
    Single
    ENHANCEMENT MODE
    2.9 ns
    N-Channel
    SWITCHING
    24m Ω @ 7A, 10V
    3V @ 250μA
    608pF @ 15V
    9.78A Ta
    12.9nC @ 10V
    3.3ns
    4.5V 10V
    ±20V
    8 ns
    16 ns
    14.4A
    20V
    0.024Ohm
    -
    ROHS3 Compliant
    3
    3.949996g
    no
    FET General Purpose Power
    3
    8.9W
    DRAIN
    30V
    TO-252AA
    9.78A
    46.5A
    2.39mm
    6.73mm
    6.22mm
    No SVHC
    No
    -
    -
    -
    -
    -
    -
    -
    -
  • DMN3042L-7
    23 Weeks
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    R-PDSO-G3
    1
    -
    720mW Ta
    -
    ENHANCEMENT MODE
    -
    N-Channel
    SWITCHING
    26.5m Ω @ 5.8A, 10V
    1.4V @ 250μA
    860pF @ 15V
    5.8A Ta
    20nC @ 10V
    -
    2.5V 10V
    ±12V
    -
    -
    5.8A
    -
    0.0265Ohm
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    30V
    -
    -
    -
    -
    -
    -
    -
    -
    SINGLE WITH BUILT-IN DIODE
    30V
    80 pF
    -
    -
    -
    -
    -
  • DMN3730UFB4-7
    17 Weeks
    Surface Mount
    Surface Mount
    3-XFDFN
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    e4
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    MOSFET (Metal Oxide)
    BOTTOM
    NO LEAD
    260
    40
    -
    1
    1
    470mW Ta
    -
    ENHANCEMENT MODE
    3.5 ns
    N-Channel
    SWITCHING
    460m Ω @ 200mA, 4.5V
    950mV @ 250μA
    64.3pF @ 25V
    750mA Ta
    1.6nC @ 4.5V
    2.8ns
    1.8V 4.5V
    ±8V
    13 ns
    38 ns
    910mA
    8V
    0.46Ohm
    30V
    ROHS3 Compliant
    3
    -
    yes
    FET General Purpose Powers
    3
    690mW
    DRAIN
    -
    -
    0.75A
    -
    350μm
    1.08mm
    675μm
    No SVHC
    -
    SINGLE WITH BUILT-IN DIODE
    -
    -
    Gold
    HIGH RELIABILITY
    Not Qualified
    450mV
    Lead Free
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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