Diodes Incorporated DMN3026LVT-7
- Part Number:
- DMN3026LVT-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2479239-DMN3026LVT-7
- Description:
- MOSFET N-CH 30V 6.6A 6-SOT26
- Datasheet:
- DMN3026LVT-7
Diodes Incorporated DMN3026LVT-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN3026LVT-7.
- Factory Lead Time23 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-23-6 Thin, TSOT-23-6
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2014
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Capacitance643pF
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PDSO-G6
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max1.2W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Turn On Delay Time2.2 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs23m Ω @ 6.5A, 10V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds643pF @ 15V
- Current - Continuous Drain (Id) @ 25°C6.6A Ta
- Gate Charge (Qg) (Max) @ Vgs12.5nC @ 10V
- Rise Time2.5ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)3 ns
- Turn-Off Delay Time12.1 ns
- Continuous Drain Current (ID)6.6A
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.023Ohm
- Drain to Source Breakdown Voltage30V
- RoHS StatusROHS3 Compliant
DMN3026LVT-7 Overview
A device's maximum input capacitance is 643pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 6.6A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 12.1 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 2.2 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
DMN3026LVT-7 Features
a continuous drain current (ID) of 6.6A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 12.1 ns
DMN3026LVT-7 Applications
There are a lot of Diodes Incorporated
DMN3026LVT-7 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 643pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 6.6A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 12.1 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 2.2 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
DMN3026LVT-7 Features
a continuous drain current (ID) of 6.6A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 12.1 ns
DMN3026LVT-7 Applications
There are a lot of Diodes Incorporated
DMN3026LVT-7 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
DMN3026LVT-7 More Descriptions
Mosfet, N-Ch, 30V, 6.6A, Tsot-26 Rohs Compliant: Yes |Diodes Inc. DMN3026LVT-7
Single N-Channel 30 V 30 mOhm 12.5 nC 1.5 W Silicon Mosfet - TSOT-26
Trans MOSFET N-CH 30V 6.6A 6-Pin TSOT-26 T/R
30V 6.6A 1.2W 23mΩ@6.5A,10V null SOT-23-6 MOSFETs ROHS
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGSDiodes Inc SCT
Small Signal Field-Effect Transistor, 6.6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Single N-Channel 30 V 30 mOhm 12.5 nC 1.5 W Silicon Mosfet - TSOT-26
Trans MOSFET N-CH 30V 6.6A 6-Pin TSOT-26 T/R
30V 6.6A 1.2W 23mΩ@6.5A,10V null SOT-23-6 MOSFETs ROHS
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGSDiodes Inc SCT
Small Signal Field-Effect Transistor, 6.6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
The three parts on the right have similar specifications to DMN3026LVT-7.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishCapacitanceTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModeTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageRoHS StatusNumber of PinsWeightPbfree CodeSubcategoryPin CountPower DissipationCase ConnectionDrain to Source Voltage (Vdss)JEDEC-95 CodeDrain Current-Max (Abs) (ID)Pulsed Drain Current-Max (IDM)HeightLengthWidthREACH SVHCRadiation HardeningConfigurationDS Breakdown Voltage-MinFeedback Cap-Max (Crss)Contact PlatingAdditional FeatureQualification StatusThreshold VoltageLead FreeView Compare
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DMN3026LVT-723 WeeksSurface MountSurface MountSOT-23-6 Thin, TSOT-23-6SILICON-55°C~150°C TJTape & Reel (TR)2014e3Active1 (Unlimited)6EAR99Matte Tin (Sn)643pFMOSFET (Metal Oxide)DUALGULL WING26030R-PDSO-G6111.2W TaSingleENHANCEMENT MODE2.2 nsN-ChannelSWITCHING23m Ω @ 6.5A, 10V2V @ 250μA643pF @ 15V6.6A Ta12.5nC @ 10V2.5ns4.5V 10V±20V3 ns12.1 ns6.6A20V0.023Ohm30VROHS3 Compliant-------------------------
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17 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63SILICON-55°C~150°C TJCut Tape (CT)-e3Active1 (Unlimited)2EAR99Matte Tin (Sn)-MOSFET (Metal Oxide)-GULL WING26040R-PSSO-G2112.17W TaSingleENHANCEMENT MODE2.9 nsN-ChannelSWITCHING24m Ω @ 7A, 10V3V @ 250μA608pF @ 15V9.78A Ta12.9nC @ 10V3.3ns4.5V 10V±20V8 ns16 ns14.4A20V0.024Ohm-ROHS3 Compliant33.949996gnoFET General Purpose Power38.9WDRAIN30VTO-252AA9.78A46.5A2.39mm6.73mm6.22mmNo SVHCNo--------
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23 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3SILICON-55°C~150°C TJTape & Reel (TR)2015e3Active1 (Unlimited)3EAR99Matte Tin (Sn)-MOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G31-720mW Ta-ENHANCEMENT MODE-N-ChannelSWITCHING26.5m Ω @ 5.8A, 10V1.4V @ 250μA860pF @ 15V5.8A Ta20nC @ 10V-2.5V 10V±12V--5.8A-0.0265Ohm-ROHS3 Compliant-------30V--------SINGLE WITH BUILT-IN DIODE30V80 pF-----
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17 WeeksSurface MountSurface Mount3-XFDFNSILICON-55°C~150°C TJTape & Reel (TR)2012e4Active1 (Unlimited)3EAR99--MOSFET (Metal Oxide)BOTTOMNO LEAD26040-11470mW Ta-ENHANCEMENT MODE3.5 nsN-ChannelSWITCHING460m Ω @ 200mA, 4.5V950mV @ 250μA64.3pF @ 25V750mA Ta1.6nC @ 4.5V2.8ns1.8V 4.5V±8V13 ns38 ns910mA8V0.46Ohm30VROHS3 Compliant3-yesFET General Purpose Powers3690mWDRAIN--0.75A-350μm1.08mm675μmNo SVHC-SINGLE WITH BUILT-IN DIODE--GoldHIGH RELIABILITYNot Qualified450mVLead Free
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