Diodes Incorporated DMN2005K-7

Name: DMN2005K-7
Brand: Diodes Incorporated
SKU: 2481764-DMN2005K-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DMN2005K-7

Manufacturer:: Diodes Incorporated

Ventron No:: 2481764-DMN2005K-7

Description:: MOSFET N-CH 20V 300MA SOT23-3

ECAD Model:

Datasheet:: DMN2005K-7

Specifications

Diodes Incorporated DMN2005K-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN2005K-7.

Factory Lead Time
16 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2014
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Powers
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
350mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
350mW
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.7 Ω @ 200mA, 2.7V
Vgs(th) (Max) @ Id
900mV @ 100μA
Current - Continuous Drain (Id) @ 25°C
300mA Ta
Drive Voltage (Max Rds On,Min Rds On)
1.8V 2.7V
Vgs (Max)
±10V
Continuous Drain Current (ID)
300mA
Gate to Source Voltage (Vgs)
10V
Drain to Source Breakdown Voltage
20V
Height
1mm
Length
2.9mm
Width
1.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

DMN2005K-7 Overview
The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 300mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=20V. And this device has 20V drain to source breakdown voltage.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 10V.By using drive voltage (1.8V 2.7V), this device helps reduce its overall power consumption.

DMN2005K-7 Features
a continuous drain current (ID) of 300mA
a drain-to-source breakdown voltage of 20V voltage

DMN2005K-7 Applications
There are a lot of Diodes Incorporated
DMN2005K-7 applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

DMN2005K-7 More Descriptions

N-Channel 20 V 1.7 O Surface Mount Enhancement Mode Mosfet - SOT-23
Trans MOSFET N-CH 20V 0.3A Automotive 3-Pin SOT-23 T/R
Mosfet, N-Ch, 20V, 0.3A, Sot-23 Rohs Compliant: Yes |Diodes Inc. DMN2005K-7

Product Comparison

The three parts on the right have similar specifications to DMN2005K-7.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Current - Continuous Drain (Id) @ 25°C

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Input Capacitance (Ciss) (Max) @ Vds

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Resistance

Additional Feature

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Threshold Voltage

Max Junction Temperature (Tj)

Lead Free

View Compare
DMN2005K-7

Diodes Incorporated

16 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

7.994566mg

SILICON

-65°C~150°C TJ

Tape & Reel (TR)

2014

e3

yes

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

FET General Purpose Powers

MOSFET (Metal Oxide)

DUAL

GULL WING

260

40

3

1

1

350mW Ta

Single

ENHANCEMENT MODE

350mW

N-Channel

SWITCHING

1.7 Ω @ 200mA, 2.7V

900mV @ 100μA

300mA Ta

1.8V 2.7V

±10V

300mA

10V

20V

1mm

2.9mm

1.3mm

No SVHC

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-
DMN2400UFDQ-7

Diodes Incorporated

6 Weeks

-

Surface Mount

3-PowerUDFN

3

-

-

-55°C~150°C TJ

Tape & Reel (TR)

2015

e4

-

Active

1 (Unlimited)

-

EAR99

Nickel/Palladium/Gold (Ni/Pd/Au)

-

MOSFET (Metal Oxide)

-

-

NOT SPECIFIED

NOT SPECIFIED

-

-

-

400mW Ta

-

-

-

N-Channel

-

600m Ω @ 200mA, 4.5V

1V @ 250μA

900mA Ta

1.5V 4.5V

±12V

900mA

-

-

-

-

-

-

-

ROHS3 Compliant

37pF @ 16V

0.5nC @ 4.5V

20V

-

-

-

-

-

-

-

-

-

DMN2005K-7 vs DMN2400UFDQ-7
DMN2028UVT-13

Diodes Incorporated

15 Weeks

Surface Mount

Surface Mount

SOT-23-6 Thin, TSOT-23-6

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

2015

e3

yes

Active

1 (Unlimited)

-

EAR99

Matte Tin (Sn)

-

MOSFET (Metal Oxide)

-

-

260

30

-

-

-

1.2W Ta

-

-

-

N-Channel

-

24m Ω @ 6.2A, 4.5V

1.5V @ 250μA

6.2A Ta

2.5V 4.5V

±8V

6.2A

-

-

-

-

-

-

-

ROHS3 Compliant

856pF @ 10V

8.3nC @ 4.5V

20V

-

-

-

-

-

-

-

-

-

DMN2005K-7 vs DMN2028UVT-13
DMN26D0UT-7

Diodes Incorporated

14 Weeks

Surface Mount

Surface Mount

SOT-523

3

2.012816mg

SILICON

-55°C~150°C TJ

Cut Tape (CT)

2009

e3

yes

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

GULL WING

260

40

3

1

1

300mW Ta

Single

ENHANCEMENT MODE

300mW

N-Channel

SWITCHING

3 Ω @ 100mA, 4.5V

1V @ 250μA

230mA Ta

1.2V 4.5V

±10V

230mA

10V

20V

900μm

1.7mm

850μm

No SVHC

No

ROHS3 Compliant

14.1pF @ 15V

-

-

3Ohm

HIGH RELIABILITY

3.8 ns

7.9ns

15.2 ns

13.4 ns

1V

150°C

Lead Free

DMN2005K-7 vs DMN26D0UT-7