Diodes Incorporated DMN26D0UT-7
- Part Number:
- DMN26D0UT-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2849859-DMN26D0UT-7
- Description:
- MOSFET N-CH 20V 230MA SOT523
- Datasheet:
- DMN26D0UT-7
Diodes Incorporated DMN26D0UT-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN26D0UT-7.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-523
- Number of Pins3
- Weight2.012816mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published2009
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance3Ohm
- Terminal FinishMatte Tin (Sn)
- Additional FeatureHIGH RELIABILITY
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max300mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation300mW
- Turn On Delay Time3.8 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs3 Ω @ 100mA, 4.5V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds14.1pF @ 15V
- Current - Continuous Drain (Id) @ 25°C230mA Ta
- Rise Time7.9ns
- Drive Voltage (Max Rds On,Min Rds On)1.2V 4.5V
- Vgs (Max)±10V
- Fall Time (Typ)15.2 ns
- Turn-Off Delay Time13.4 ns
- Continuous Drain Current (ID)230mA
- Threshold Voltage1V
- Gate to Source Voltage (Vgs)10V
- Drain to Source Breakdown Voltage20V
- Max Junction Temperature (Tj)150°C
- Height900μm
- Length1.7mm
- Width850μm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DMN26D0UT-7 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 14.1pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 20V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 20V.As a result of its turn-off delay time, which is 13.4 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 3.8 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 10VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 1V.In addition to reducing power consumption, this device uses drive voltage (1.2V 4.5V).
DMN26D0UT-7 Features
a continuous drain current (ID) of 230mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 13.4 ns
a threshold voltage of 1V
DMN26D0UT-7 Applications
There are a lot of Diodes Incorporated
DMN26D0UT-7 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 14.1pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 20V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 20V.As a result of its turn-off delay time, which is 13.4 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 3.8 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 10VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 1V.In addition to reducing power consumption, this device uses drive voltage (1.2V 4.5V).
DMN26D0UT-7 Features
a continuous drain current (ID) of 230mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 13.4 ns
a threshold voltage of 1V
DMN26D0UT-7 Applications
There are a lot of Diodes Incorporated
DMN26D0UT-7 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DMN26D0UT-7 More Descriptions
Trans Mosfet N-Ch 20V 0.23A 3-Pin Sot-523 T/r Rohs Compliant: Yes
N-Channel 20 V 3 Ohm SMT Enhancement Mode Mosfet - SOT-523
MOSFET, N-CH, 20V, SOT-523-3; Transistor Polarity:N Channel; Continuous Drain Current Id:230mA; Source Voltage Vds:20V; On Resistance
Transistors - FETs, MOSFETs - Single 1 (Unlimited) SOT-523 Surface Mount MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 3 Ω @ 100mA, 4.5V 230mA Ta -55°C~150°C TJ MOSFET N-CH 20V 230MA SOT523
MOSFET, N-CH, 20V, SOT-523-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 230mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 1.8ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 300mW; Transistor Case Style: SOT-523; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
N-Channel 20 V 3 Ohm SMT Enhancement Mode Mosfet - SOT-523
MOSFET, N-CH, 20V, SOT-523-3; Transistor Polarity:N Channel; Continuous Drain Current Id:230mA; Source Voltage Vds:20V; On Resistance
Transistors - FETs, MOSFETs - Single 1 (Unlimited) SOT-523 Surface Mount MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 3 Ω @ 100mA, 4.5V 230mA Ta -55°C~150°C TJ MOSFET N-CH 20V 230MA SOT523
MOSFET, N-CH, 20V, SOT-523-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 230mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 1.8ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 300mW; Transistor Case Style: SOT-523; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
The three parts on the right have similar specifications to DMN26D0UT-7.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageMax Junction Temperature (Tj)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)JESD-30 CodeCase ConnectionDrain-source On Resistance-MaxView Compare
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DMN26D0UT-714 WeeksSurface MountSurface MountSOT-52332.012816mgSILICON-55°C~150°C TJCut Tape (CT)2009e3yesActive1 (Unlimited)3EAR993OhmMatte Tin (Sn)HIGH RELIABILITYFET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING26040311300mW TaSingleENHANCEMENT MODE300mW3.8 nsN-ChannelSWITCHING3 Ω @ 100mA, 4.5V1V @ 250μA14.1pF @ 15V230mA Ta7.9ns1.2V 4.5V±10V15.2 ns13.4 ns230mA1V10V20V150°C900μm1.7mm850μmNo SVHCNoROHS3 CompliantLead Free------
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6 Weeks-Surface Mount3-PowerUDFN3---55°C~150°C TJTape & Reel (TR)2015e4-Active1 (Unlimited)-EAR99-Nickel/Palladium/Gold (Ni/Pd/Au)--MOSFET (Metal Oxide)--NOT SPECIFIEDNOT SPECIFIED---400mW Ta----N-Channel-600m Ω @ 200mA, 4.5V1V @ 250μA37pF @ 16V900mA Ta-1.5V 4.5V±12V--900mA---------ROHS3 Compliant-0.5nC @ 4.5V20V---
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15 WeeksSurface MountSurface MountSOT-23-6 Thin, TSOT-23-6----55°C~150°C TJTape & Reel (TR)2015e3yesActive1 (Unlimited)-EAR99-Matte Tin (Sn)--MOSFET (Metal Oxide)--26030---1.2W Ta----N-Channel-24m Ω @ 6.2A, 4.5V1.5V @ 250μA856pF @ 10V6.2A Ta-2.5V 4.5V±8V--6.2A---------ROHS3 Compliant-8.3nC @ 4.5V20V---
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14 WeeksSurface MountSurface Mount6-UDFN Exposed Pad--SILICON-55°C~150°C TJTape & Reel (TR)2014e4-Active1 (Unlimited)6EAR99-Nickel/Palladium/Gold (Ni/Pd/Au)HIGH RELIABILITY-MOSFET (Metal Oxide)DUALNO LEAD26030-11660mW TaSingleENHANCEMENT MODE-56 nsN-ChannelSWITCHING22m Ω @ 4A, 4.5V1V @ 250μA907pF @ 10V7.9A Ta87ns1.5V 4.5V±8V239 ns632 ns7.9A-8V20V------ROHS3 Compliant-18nC @ 8V-S-PDSO-N6DRAIN0.05Ohm
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