DMN26D0UT-7

Diodes Incorporated DMN26D0UT-7

Part Number:
DMN26D0UT-7
Manufacturer:
Diodes Incorporated
Ventron No:
2849859-DMN26D0UT-7
Description:
MOSFET N-CH 20V 230MA SOT523
ECAD Model:
Datasheet:
DMN26D0UT-7

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Comments
Specifications
Diodes Incorporated DMN26D0UT-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMN26D0UT-7.
  • Factory Lead Time
    14 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-523
  • Number of Pins
    3
  • Weight
    2.012816mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Cut Tape (CT)
  • Published
    2009
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    3Ohm
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    300mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    300mW
  • Turn On Delay Time
    3.8 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    3 Ω @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    14.1pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    230mA Ta
  • Rise Time
    7.9ns
  • Drive Voltage (Max Rds On,Min Rds On)
    1.2V 4.5V
  • Vgs (Max)
    ±10V
  • Fall Time (Typ)
    15.2 ns
  • Turn-Off Delay Time
    13.4 ns
  • Continuous Drain Current (ID)
    230mA
  • Threshold Voltage
    1V
  • Gate to Source Voltage (Vgs)
    10V
  • Drain to Source Breakdown Voltage
    20V
  • Max Junction Temperature (Tj)
    150°C
  • Height
    900μm
  • Length
    1.7mm
  • Width
    850μm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
DMN26D0UT-7 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 14.1pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 20V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 20V.As a result of its turn-off delay time, which is 13.4 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 3.8 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 10VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 1V.In addition to reducing power consumption, this device uses drive voltage (1.2V 4.5V).

DMN26D0UT-7 Features
a continuous drain current (ID) of 230mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 13.4 ns
a threshold voltage of 1V


DMN26D0UT-7 Applications
There are a lot of Diodes Incorporated
DMN26D0UT-7 applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DMN26D0UT-7 More Descriptions
Trans Mosfet N-Ch 20V 0.23A 3-Pin Sot-523 T/r Rohs Compliant: Yes
N-Channel 20 V 3 Ohm SMT Enhancement Mode Mosfet - SOT-523
MOSFET, N-CH, 20V, SOT-523-3; Transistor Polarity:N Channel; Continuous Drain Current Id:230mA; Source Voltage Vds:20V; On Resistance
Transistors - FETs, MOSFETs - Single 1 (Unlimited) SOT-523 Surface Mount MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 3 Ω @ 100mA, 4.5V 230mA Ta -55°C~150°C TJ MOSFET N-CH 20V 230MA SOT523
MOSFET, N-CH, 20V, SOT-523-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 230mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 1.8ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 300mW; Transistor Case Style: SOT-523; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Product Comparison
The three parts on the right have similar specifications to DMN26D0UT-7.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Max Junction Temperature (Tj)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    JESD-30 Code
    Case Connection
    Drain-source On Resistance-Max
    View Compare
  • DMN26D0UT-7
    DMN26D0UT-7
    14 Weeks
    Surface Mount
    Surface Mount
    SOT-523
    3
    2.012816mg
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    2009
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    3Ohm
    Matte Tin (Sn)
    HIGH RELIABILITY
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    3
    1
    1
    300mW Ta
    Single
    ENHANCEMENT MODE
    300mW
    3.8 ns
    N-Channel
    SWITCHING
    3 Ω @ 100mA, 4.5V
    1V @ 250μA
    14.1pF @ 15V
    230mA Ta
    7.9ns
    1.2V 4.5V
    ±10V
    15.2 ns
    13.4 ns
    230mA
    1V
    10V
    20V
    150°C
    900μm
    1.7mm
    850μm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
  • DMN2400UFDQ-7
    6 Weeks
    -
    Surface Mount
    3-PowerUDFN
    3
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    e4
    -
    Active
    1 (Unlimited)
    -
    EAR99
    -
    Nickel/Palladium/Gold (Ni/Pd/Au)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    400mW Ta
    -
    -
    -
    -
    N-Channel
    -
    600m Ω @ 200mA, 4.5V
    1V @ 250μA
    37pF @ 16V
    900mA Ta
    -
    1.5V 4.5V
    ±12V
    -
    -
    900mA
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    0.5nC @ 4.5V
    20V
    -
    -
    -
  • DMN2028UVT-13
    15 Weeks
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    e3
    yes
    Active
    1 (Unlimited)
    -
    EAR99
    -
    Matte Tin (Sn)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    260
    30
    -
    -
    -
    1.2W Ta
    -
    -
    -
    -
    N-Channel
    -
    24m Ω @ 6.2A, 4.5V
    1.5V @ 250μA
    856pF @ 10V
    6.2A Ta
    -
    2.5V 4.5V
    ±8V
    -
    -
    6.2A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    8.3nC @ 4.5V
    20V
    -
    -
    -
  • DMN2022UFDF-7
    14 Weeks
    Surface Mount
    Surface Mount
    6-UDFN Exposed Pad
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2014
    e4
    -
    Active
    1 (Unlimited)
    6
    EAR99
    -
    Nickel/Palladium/Gold (Ni/Pd/Au)
    HIGH RELIABILITY
    -
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    260
    30
    -
    1
    1
    660mW Ta
    Single
    ENHANCEMENT MODE
    -
    56 ns
    N-Channel
    SWITCHING
    22m Ω @ 4A, 4.5V
    1V @ 250μA
    907pF @ 10V
    7.9A Ta
    87ns
    1.5V 4.5V
    ±8V
    239 ns
    632 ns
    7.9A
    -
    8V
    20V
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    18nC @ 8V
    -
    S-PDSO-N6
    DRAIN
    0.05Ohm
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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