Diodes Incorporated DMG7430LFG-7
- Part Number:
- DMG7430LFG-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2848761-DMG7430LFG-7
- Description:
- MOSFET N-CH 30V 10.5A PWRDI3333
- Datasheet:
- DMG7430LFG-7
Diodes Incorporated DMG7430LFG-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMG7430LFG-7.
- Factory Lead Time17 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerVDFN
- Number of Pins8
- Weight72.007789mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2012
- JESD-609 Codee4
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Terminal FinishNickel/Palladium/Gold (Ni/Pd/Au)
- Additional FeatureHIGH RELIABILITY
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- JESD-30 CodeS-PDSO-N5
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max900mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Turn On Delay Time5.2 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs11m Ω @ 20A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1281pF @ 15V
- Current - Continuous Drain (Id) @ 25°C10.5A Ta
- Gate Charge (Qg) (Max) @ Vgs26.7nC @ 10V
- Rise Time21.2ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)5.1 ns
- Turn-Off Delay Time22.3 ns
- Continuous Drain Current (ID)10.5A
- Gate to Source Voltage (Vgs)20V
- DS Breakdown Voltage-Min30V
- Height850μm
- Length3.35mm
- Width3.35mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
DMG7430LFG-7 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1281pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 22.3 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 5.2 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 30V, it should remain above the 30V level.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
DMG7430LFG-7 Features
a continuous drain current (ID) of 10.5A
the turn-off delay time is 22.3 ns
a 30V drain to source voltage (Vdss)
DMG7430LFG-7 Applications
There are a lot of Diodes Incorporated
DMG7430LFG-7 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1281pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 22.3 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 5.2 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 30V, it should remain above the 30V level.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
DMG7430LFG-7 Features
a continuous drain current (ID) of 10.5A
the turn-off delay time is 22.3 ns
a 30V drain to source voltage (Vdss)
DMG7430LFG-7 Applications
There are a lot of Diodes Incorporated
DMG7430LFG-7 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DMG7430LFG-7 More Descriptions
DMG7430LFG Series 30 V 11 mOhm N-Channel Enhancement Mode Mosfet -POWERDI®3333-8
Trans MOSFET N-CH 30V 10.5A Automotive 8-Pin PowerDI EP T/R
MOSFET, N-CH, 30V, 10.5A, POWERDI3333; Transistor Polarity: N Channel; Continuous Drain Current Id: 10.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.007ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 900mW; Transistor Case Style: PowerDI 3333; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Trans MOSFET N-CH 30V 10.5A Automotive 8-Pin PowerDI EP T/R
MOSFET, N-CH, 30V, 10.5A, POWERDI3333; Transistor Polarity: N Channel; Continuous Drain Current Id: 10.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.007ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 900mW; Transistor Case Style: PowerDI 3333; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
The three parts on the right have similar specifications to DMG7430LFG-7.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModeCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)DS Breakdown Voltage-MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeContact PlatingDrain to Source Breakdown VoltagePin CountDrain Current-Max (Abs) (ID)FET FeatureReference StandardDrain-source On Resistance-MaxFeedback Cap-Max (Crss)View Compare
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DMG7430LFG-717 WeeksSurface MountSurface Mount8-PowerVDFN872.007789mgSILICON-55°C~150°C TJTape & Reel (TR)2012e4noActive1 (Unlimited)5EAR99Nickel/Palladium/Gold (Ni/Pd/Au)HIGH RELIABILITYFET General Purpose PowerMOSFET (Metal Oxide)DUAL26040S-PDSO-N511900mW TaSingleENHANCEMENT MODEDRAIN5.2 nsN-ChannelSWITCHING11m Ω @ 20A, 10V2.5V @ 250μA1281pF @ 15V10.5A Ta26.7nC @ 10V21.2ns30V4.5V 10V±20V5.1 ns22.3 ns10.5A20V30V850μm3.35mm3.35mmNo SVHCNoROHS3 CompliantLead Free---------
-
-Surface MountSurface Mount8-PowerVDFN872.007789mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3yesObsolete1 (Unlimited)5EAR99Matte Tin (Sn)HIGH RELIABILITYOther TransistorsMOSFET (Metal Oxide)DUAL26040S-PDSO-N511940mW TaSingleENHANCEMENT MODEDRAIN11.3 nsP-ChannelSWITCHING11m Ω @ 12A, 20V3V @ 250μA2987pF @ 15V9.8A Ta58nC @ 10V15.4ns30V4.5V 20V±25V22 ns38 ns9.8A25V-850μm3.35mm3.35mmNo SVHCNoROHS3 CompliantLead FreeGold-30V------
-
6 WeeksSurface MountSurface Mount8-PowerVDFN872.007789mgSILICON-55°C~150°C TJCut Tape (CT)2012e3yesObsolete1 (Unlimited)5EAR99Matte Tin (Sn)HIGH RELIABILITYFET General Purpose PowerMOSFET (Metal Oxide)DUAL26040S-PDSO-N511890mW TaSingleENHANCEMENT MODEDRAIN15.8 nsN-ChannelSWITCHING10m Ω @ 13.5A, 10V2.5V @ 250μA4310pF @ 15V12A Ta31.6nC @ 10V27.8ns30V4.5V 10V±20V13.6 ns29.7 ns12A20V30V---No SVHCNoROHS3 Compliant---89.5ASchottky Diode (Body)---
-
-Surface MountSurface Mount8-PowerVDFN872.007789mgSILICON-55°C~150°C TJTape & Reel (TR)2012e3yesObsolete1 (Unlimited)5EAR99Matte Tin (Sn)HIGH RELIABILITYOther TransistorsMOSFET (Metal Oxide)DUAL26040S-PDSO-N51-940mW TaSingleENHANCEMENT MODEDRAIN11.3 nsP-ChannelSWITCHING11m Ω @ 12A, 20V3V @ 250μA2987pF @ 15V9.8A Ta58nC @ 10V15.4ns30V4.5V 20V±25V22 ns38 ns9.8A25V30V850μm3.35mm3.35mmNo SVHCNoROHS3 Compliant------AEC-Q1010.011Ohm391 pF
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