DMG7430LFG-7

Diodes Incorporated DMG7430LFG-7

Part Number:
DMG7430LFG-7
Manufacturer:
Diodes Incorporated
Ventron No:
2848761-DMG7430LFG-7
Description:
MOSFET N-CH 30V 10.5A PWRDI3333
ECAD Model:
Datasheet:
DMG7430LFG-7

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Comments
Specifications
Diodes Incorporated DMG7430LFG-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated DMG7430LFG-7.
  • Factory Lead Time
    17 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerVDFN
  • Number of Pins
    8
  • Weight
    72.007789mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2012
  • JESD-609 Code
    e4
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    Nickel/Palladium/Gold (Ni/Pd/Au)
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • JESD-30 Code
    S-PDSO-N5
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    900mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Turn On Delay Time
    5.2 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    11m Ω @ 20A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1281pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    10.5A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    26.7nC @ 10V
  • Rise Time
    21.2ns
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    5.1 ns
  • Turn-Off Delay Time
    22.3 ns
  • Continuous Drain Current (ID)
    10.5A
  • Gate to Source Voltage (Vgs)
    20V
  • DS Breakdown Voltage-Min
    30V
  • Height
    850μm
  • Length
    3.35mm
  • Width
    3.35mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
DMG7430LFG-7 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1281pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 22.3 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 5.2 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 30V, it should remain above the 30V level.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

DMG7430LFG-7 Features
a continuous drain current (ID) of 10.5A
the turn-off delay time is 22.3 ns
a 30V drain to source voltage (Vdss)


DMG7430LFG-7 Applications
There are a lot of Diodes Incorporated
DMG7430LFG-7 applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DMG7430LFG-7 More Descriptions
DMG7430LFG Series 30 V 11 mOhm N-Channel Enhancement Mode Mosfet -POWERDI®3333-8
Trans MOSFET N-CH 30V 10.5A Automotive 8-Pin PowerDI EP T/R
MOSFET, N-CH, 30V, 10.5A, POWERDI3333; Transistor Polarity: N Channel; Continuous Drain Current Id: 10.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.007ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 900mW; Transistor Case Style: PowerDI 3333; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Product Comparison
The three parts on the right have similar specifications to DMG7430LFG-7.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    DS Breakdown Voltage-Min
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Contact Plating
    Drain to Source Breakdown Voltage
    Pin Count
    Drain Current-Max (Abs) (ID)
    FET Feature
    Reference Standard
    Drain-source On Resistance-Max
    Feedback Cap-Max (Crss)
    View Compare
  • DMG7430LFG-7
    DMG7430LFG-7
    17 Weeks
    Surface Mount
    Surface Mount
    8-PowerVDFN
    8
    72.007789mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    e4
    no
    Active
    1 (Unlimited)
    5
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    HIGH RELIABILITY
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    260
    40
    S-PDSO-N5
    1
    1
    900mW Ta
    Single
    ENHANCEMENT MODE
    DRAIN
    5.2 ns
    N-Channel
    SWITCHING
    11m Ω @ 20A, 10V
    2.5V @ 250μA
    1281pF @ 15V
    10.5A Ta
    26.7nC @ 10V
    21.2ns
    30V
    4.5V 10V
    ±20V
    5.1 ns
    22.3 ns
    10.5A
    20V
    30V
    850μm
    3.35mm
    3.35mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • DMG7401SFG-7
    -
    Surface Mount
    Surface Mount
    8-PowerVDFN
    8
    72.007789mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    e3
    yes
    Obsolete
    1 (Unlimited)
    5
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    260
    40
    S-PDSO-N5
    1
    1
    940mW Ta
    Single
    ENHANCEMENT MODE
    DRAIN
    11.3 ns
    P-Channel
    SWITCHING
    11m Ω @ 12A, 20V
    3V @ 250μA
    2987pF @ 15V
    9.8A Ta
    58nC @ 10V
    15.4ns
    30V
    4.5V 20V
    ±25V
    22 ns
    38 ns
    9.8A
    25V
    -
    850μm
    3.35mm
    3.35mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    Gold
    -30V
    -
    -
    -
    -
    -
    -
  • DMG7702SFG-7
    6 Weeks
    Surface Mount
    Surface Mount
    8-PowerVDFN
    8
    72.007789mg
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    2012
    e3
    yes
    Obsolete
    1 (Unlimited)
    5
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    260
    40
    S-PDSO-N5
    1
    1
    890mW Ta
    Single
    ENHANCEMENT MODE
    DRAIN
    15.8 ns
    N-Channel
    SWITCHING
    10m Ω @ 13.5A, 10V
    2.5V @ 250μA
    4310pF @ 15V
    12A Ta
    31.6nC @ 10V
    27.8ns
    30V
    4.5V 10V
    ±20V
    13.6 ns
    29.7 ns
    12A
    20V
    30V
    -
    -
    -
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    8
    9.5A
    Schottky Diode (Body)
    -
    -
    -
  • DMG7401SFG-13
    -
    Surface Mount
    Surface Mount
    8-PowerVDFN
    8
    72.007789mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    e3
    yes
    Obsolete
    1 (Unlimited)
    5
    EAR99
    Matte Tin (Sn)
    HIGH RELIABILITY
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    260
    40
    S-PDSO-N5
    1
    -
    940mW Ta
    Single
    ENHANCEMENT MODE
    DRAIN
    11.3 ns
    P-Channel
    SWITCHING
    11m Ω @ 12A, 20V
    3V @ 250μA
    2987pF @ 15V
    9.8A Ta
    58nC @ 10V
    15.4ns
    30V
    4.5V 20V
    ±25V
    22 ns
    38 ns
    9.8A
    25V
    30V
    850μm
    3.35mm
    3.35mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    AEC-Q101
    0.011Ohm
    391 pF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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