STMicroelectronics D45H11

Name: D45H11
Brand: STMicroelectronics
SKU: 2463258-D45H11
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: D45H11

Manufacturer:: STMicroelectronics

Ventron No:: 2463258-D45H11

Description:: TRANS PNP 80V 10A TO-220

ECAD Model:

Datasheet:: TO220B03 Pkg Drawing

Specifications

STMicroelectronics D45H11 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics D45H11.

Surface Mount
NO
Transistor Element Material
SILICON
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
SINGLE
Terminal Form
THROUGH-HOLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
JEDEC-95 Code
TO-220AB
Transition Frequency
40MHz
Collector Current-Max (IC)
10A
DC Current Gain-Min (hFE)
40
Collector-Emitter Voltage-Max
80V
RoHS Status
ROHS3 Compliant

Description

D45H11 Overview
40MHz is present in the transition frequency.Voltage of maximal collector-emitter is set to 80V.

D45H11 Features
a transition frequency of 40MHz

D45H11 Applications
There are a lot of Rochester Electronics, LLC
D45H11 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

D45H11 More Descriptions

D45H11 Series NPN/PNP 80 V 10 A Silicon Power Transistor Flange Mount - TO-220
Trans GP BJT PNP 80V 10A 3-Pin(3 Tab) TO-220 Tube - Rail/Tube
80V 50W 40@4A,1V 10A PNP TO-220 Bipolar Transistors - BJT ROHS
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT PNP Gen Pur Switch
TRANSISTOR, PNP, -80V -10A, TO-220 PKG
Power Bipolar, PNP, 1V, 400mA, TO-220, TubeSTMicroelectronics SCT
Transistor Polarity:Pnp; Collector Emitter Voltage V(Br)Ceo:80V; Dc Collector Current:10A; Power Dissipation Pd:50W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency Ft:-; Dc Current Gain Hfe:120Hfe; Msl:- Rohs Compliant: Yes |Stmicroelectronics D45H11.
Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) A = 10 / Collector-Emitter Voltage (Vceo) V = 80 / DC Current Gain (hFE) = 60 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Power Dissipation (Pd) W = 50 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 1.5

Product Comparison

The three parts on the right have similar specifications to D45H11.

Image

Part Number

Manufacturer

Surface Mount

Transistor Element Material

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Transistor Application

Polarity/Channel Type

JEDEC-95 Code

Transition Frequency

Collector Current-Max (IC)

DC Current Gain-Min (hFE)

Collector-Emitter Voltage-Max

RoHS Status

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Operating Temperature

Packaging

ECCN Code

Subcategory

Max Power Dissipation

Base Part Number

Element Configuration

Power Dissipation

Case Connection

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Emitter Base Voltage (VEBO)

hFE Min

Radiation Hardening

Number of Pins

Weight

Voltage - Rated DC

Current Rating

Collector Base Voltage (VCBO)

VCEsat-Max

Height

Length

Width

REACH SVHC

Lead Free

Voltage - Collector Emitter Breakdown (Max)

View Compare
D45H11

STMicroelectronics

NO

SILICON

e3

yes

Obsolete

1 (Unlimited)

3

MATTE TIN

SINGLE

THROUGH-HOLE

NOT SPECIFIED

unknown

NOT SPECIFIED

3

R-PSFM-T3

COMMERCIAL

1

SINGLE

SWITCHING

PNP

TO-220AB

40MHz

10A

40

80V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
D45H11FP

STMicroelectronics

-

SILICON

e3

-

Active

1 (Unlimited)

3

-

-

-

-

-

-

3

R-PSFM-T3

-

1

-

SWITCHING

PNP

TO-220AB

-

-

-

-

ROHS3 Compliant

ACTIVE (Last Updated: 8 months ago)

8 Weeks

Tin

Through Hole

Through Hole

TO-220-3 Full Pack

150°C TJ

Tube

EAR99

Other Transistors

36W

D45H11

Single

36W

ISOLATED

PNP

80V

10A

40 @ 4A 1V

10μA

1V @ 400mA, 8A

80V

-1V

5V

40

No

-

-

-

-

-

-

-

-

-

-

-

-

D45H11 vs D45H11FP
D45H8

STMicroelectronics

-

SILICON

e3

yes

Obsolete

1 (Unlimited)

3

-

-

-

-

-

-

3

-

-

1

-

SWITCHING

PNP

TO-220AB

40MHz

-

-

-

ROHS3 Compliant

-

-

Tin

Through Hole

Through Hole

TO-220-3

150°C TJ

Tube

EAR99

Other Transistors

50W

D45H8

Single

50W

COLLECTOR

PNP

60V

10A

40 @ 4A 1V

10μA

1V @ 400mA, 8A

60V

1V

5V

60

No

3

4.535924g

-60V

8A

60V

1 V

9.15mm

10.4mm

4.6mm

No SVHC

Lead Free

-

D45H11 vs D45H8
D45H5

STMicroelectronics

-

SILICON

e3

-

Obsolete

1 (Unlimited)

3

-

-

-

-

-

-

3

-

-

1

-

SWITCHING

PNP

TO-220AB

40MHz

-

-

-

ROHS3 Compliant

-

-

Tin

Through Hole

Through Hole

TO-220-3

150°C TJ

Tube

EAR99

Other Transistors

50W

D45H5

Single

50W

-

PNP

-45V

10A

40 @ 4A 1V

10μA

1V @ 400mA, 8A

-45V

-1V

-5V

60

No

3

4.535924g

-45V

-10A

-5V

1 V

6.35mm

25.4mm

6.35mm

No SVHC

Lead Free

45V

D45H11 vs D45H5