STMicroelectronics D45H8

Name: D45H8
Brand: STMicroelectronics
SKU: 2466061-D45H8
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: D45H8

Manufacturer:: STMicroelectronics

Ventron No:: 2466061-D45H8

Description:: TRANS PNP 60V 10A TO-220

ECAD Model:

Datasheet:: TO220B03 Pkg Drawing

Specifications

STMicroelectronics D45H8 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics D45H8.

Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-60V
Max Power Dissipation
50W
Current Rating
8A
Base Part Number
D45H8
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
50W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 4A 1V
Current - Collector Cutoff (Max)
10μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1V @ 400mA, 8A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
40MHz
Collector Emitter Saturation Voltage
1V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
hFE Min
60
VCEsat-Max
1 V
Height
9.15mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

D45H8 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 4A 1V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 400mA, 8A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 8A.In the part, the transition frequency is 40MHz.A maximum collector current of 10A volts can be achieved.

D45H8 Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 40MHz

D45H8 Applications
There are a lot of STMicroelectronics
D45H8 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

D45H8 More Descriptions

Tube Through Hole PNP Single Bipolar (BJT) Transistor 40 @ 4A 1V 10A 60W 40MHz
D45 Series PNP 60 W 60 V 8 A Epitaxial Silicon Transistor - TO-220-3
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Power Bipolar Transistor, PNP, 10 A, 80 V
Trans GP BJT PNP 60V 8A 3-Pin(3 Tab) TO-220AB Rail
Bipolar Transistor; Package/Case:TO-220; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Current Rating:8A; Voltage Rating:60V ;RoHS Compliant: Yes
PNP Power Amplifier This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5Q.
TRANSISTOR PNP -60V -10A TO220; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency Typ ft:40MHz; Power Dissipation Pd:60W; DC Collector Current:8A; DC Current Gain hFE:60; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:1V; Current Ic Continuous a Max:8A; Gain Bandwidth ft Typ:40MHz; Hfe Min:40; Package / Case:TO-220; Power Dissipation Pd:60W; Termination Type:Through Hole; Transistor Type:Power

Product Comparison

The three parts on the right have similar specifications to D45H8.

Image

Part Number

Manufacturer

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Current Rating

Base Part Number

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

JEDEC-95 Code

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

VCEsat-Max

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Lifecycle Status

Factory Lead Time

JESD-30 Code

Voltage - Collector Emitter Breakdown (Max)

Surface Mount

Published

Additional Feature

Peak Reflow Temperature (Cel)

Frequency

Time@Peak Reflow Temperature-Max (s)

Gain Bandwidth Product

View Compare
D45H8

STMicroelectronics

Tin

Through Hole

Through Hole

TO-220-3

3

4.535924g

SILICON

150°C TJ

Tube

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

Other Transistors

-60V

50W

8A

D45H8

3

1

Single

50W

COLLECTOR

SWITCHING

PNP

PNP

60V

10A

40 @ 4A 1V

10μA

TO-220AB

1V @ 400mA, 8A

60V

40MHz

1V

60V

5V

60

1 V

9.15mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-
D45H11FP

STMicroelectronics

Tin

Through Hole

Through Hole

TO-220-3 Full Pack

-

-

SILICON

150°C TJ

Tube

e3

-

Active

1 (Unlimited)

3

EAR99

Other Transistors

-

36W

-

D45H11

3

1

Single

36W

ISOLATED

SWITCHING

PNP

PNP

80V

10A

40 @ 4A 1V

10μA

TO-220AB

1V @ 400mA, 8A

80V

-

-1V

-

5V

40

-

-

-

-

-

No

ROHS3 Compliant

-

ACTIVE (Last Updated: 8 months ago)

8 Weeks

R-PSFM-T3

-

-

-

-

-

-

-

-

D45H8 vs D45H11FP
D45H5

STMicroelectronics

Tin

Through Hole

Through Hole

TO-220-3

3

4.535924g

SILICON

150°C TJ

Tube

e3

-

Obsolete

1 (Unlimited)

3

EAR99

Other Transistors

-45V

50W

-10A

D45H5

3

1

Single

50W

-

SWITCHING

PNP

PNP

-45V

10A

40 @ 4A 1V

10μA

TO-220AB

1V @ 400mA, 8A

-45V

40MHz

-1V

-5V

-5V

60

1 V

6.35mm

25.4mm

6.35mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

45V

-

-

-

-

-

-

-

D45H8 vs D45H5
D45H8G

ON Semiconductor

Tin

-

Through Hole

TO-220-3

3

4.535924g

SILICON

-55°C~150°C TJ

Tube

e3

yes

Active

1 (Unlimited)

3

EAR99

Other Transistors

-60V

2W

-10A

D45H

3

1

Single

2W

COLLECTOR

SWITCHING

PNP

PNP

60V

10A

40 @ 4A 1V

10μA

TO-220AB

1V @ 400mA, 8A

60V

40MHz

1V

60V

5V

60

-

9.28mm

10.28mm

4.82mm

No SVHC

No

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 1 day ago)

8 Weeks

-

-

NO

2004

LEADFORM OPTIONS ARE AVAILABLE

260

40MHz

40

40MHz

D45H8 vs D45H8G