ON Semiconductor D45H11
- Part Number:
- D45H11
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3069149-D45H11
- Description:
- TRANS PNP 80V 10A TO220AB
- Datasheet:
- TO220B03 Pkg Drawing
ON Semiconductor D45H11 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor D45H11.
- Voltage - Collector Emitter Breakdown (Max):80V
- Vce Saturation (Max) @ Ib, Ic:1V @ 400mA, 8A
- Transistor Type:PNP
- Supplier Device Package:TO-220AB
- Series:-
- Power - Max:2W
- Packaging:Tube
- Package / Case:TO-220-3
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Frequency - Transition:40MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 4A, 1V
- Current - Collector Cutoff (Max):10µA
- Current - Collector (Ic) (Max):10A
The D45H11 is TRANS PNP 80V 10A TO220AB , it is part of - series. they are designed to work as Transistors - Bipolar (BJT) - Single.D45H11 with pin details manufactured by AMI Semiconductor / ON Semiconductor. The D45H11 is available in TO-220AB Package,it is part of the electronic component Chips.that includes - Series. they are designed to operate as Transistors - Bipolar (BJT) - Single.it is with Operating Temperature -55°C ~ 150°C (TJ).D45H11 with original stock manufactured by AMI Semiconductor / ON Semiconductor. The D45H11 is available in TO-220AB Package.Generally IC chips offer Mounting Style features such as SMD/SMT, Package Case of D45H11is designed to work in TO-220-3, it's Operating Temperature is -55°C ~ 150°C (TJ).The D45H11 is available in TO-220-3 Package, is part of the Transistors - Bipolar (BJT) - Single and belong to Discrete Semiconductor Products.D45H11 with EDA / CAD Models manufactured by AMI Semiconductor / ON Semiconductor. The D45H11 is available in TO-220ABPackage, is part of the Discrete Semiconductor Products.The D45H11 is Transistors - Bipolar (BJT) - Single with package TO-220-3 manufactured by AMI Semiconductor / ON Semiconductor. The D45H11 is available in TO-220AB Package, is part of the TRANS PNP 80V 10A TO220AB.
D45H11 More Descriptions
D45H11 Series NPN/PNP 80 V 10 A Silicon Power Transistor Flange Mount - TO-220
Trans GP BJT PNP 80V 10A 3-Pin(3 Tab) TO-220 Tube - Rail/Tube
80V 50W 40@4A,1V 10A PNP TO-220 Bipolar Transistors - BJT ROHS
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT PNP Gen Pur Switch
TRANSISTOR, PNP, -80V -10A, TO-220 PKG
Power Bipolar, PNP, 1V, 400mA, TO-220, TubeSTMicroelectronics SCT
Transistor Polarity:Pnp; Collector Emitter Voltage V(Br)Ceo:80V; Dc Collector Current:10A; Power Dissipation Pd:50W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency Ft:-; Dc Current Gain Hfe:120Hfe; Msl:- Rohs Compliant: Yes |Stmicroelectronics D45H11.
Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) A = 10 / Collector-Emitter Voltage (Vceo) V = 80 / DC Current Gain (hFE) = 60 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Power Dissipation (Pd) W = 50 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 1.5
Trans GP BJT PNP 80V 10A 3-Pin(3 Tab) TO-220 Tube - Rail/Tube
80V 50W 40@4A,1V 10A PNP TO-220 Bipolar Transistors - BJT ROHS
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT PNP Gen Pur Switch
TRANSISTOR, PNP, -80V -10A, TO-220 PKG
Power Bipolar, PNP, 1V, 400mA, TO-220, TubeSTMicroelectronics SCT
Transistor Polarity:Pnp; Collector Emitter Voltage V(Br)Ceo:80V; Dc Collector Current:10A; Power Dissipation Pd:50W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency Ft:-; Dc Current Gain Hfe:120Hfe; Msl:- Rohs Compliant: Yes |Stmicroelectronics D45H11.
Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) A = 10 / Collector-Emitter Voltage (Vceo) V = 80 / DC Current Gain (hFE) = 60 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Power Dissipation (Pd) W = 50 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 1.5
The three parts on the right have similar specifications to D45H11.
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ImagePart NumberManufacturerVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Contact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingBase Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Transition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinVCEsat-MaxHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeLifecycle StatusFactory Lead TimeSurface MountPublishedPbfree CodeAdditional FeaturePeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Case ConnectionGain Bandwidth ProductTerminal FinishTerminal PositionTerminal FormReach Compliance CodeJESD-30 CodeQualification StatusConfigurationCollector Current-Max (IC)DC Current Gain-Min (hFE)Collector-Emitter Voltage-MaxView Compare
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D45H1180V1V @ 400mA, 8APNPTO-220AB-2WTubeTO-220-3-55°C ~ 150°C (TJ)Through Hole40MHz40 @ 4A, 1V10µA10A---------------------------------------------------------------------
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--------------TinThrough HoleThrough HoleTO-220-334.535924gSILICON150°C TJTubee3Obsolete1 (Unlimited)3EAR99Other Transistors-45V50W-10AD45H531Single50WSWITCHINGPNPPNP-45V10A40 @ 4A 1V10μATO-220AB1V @ 400mA, 8A-45V45V40MHz-1V-5V-5V601 V6.35mm25.4mm6.35mmNo SVHCNoROHS3 CompliantLead Free---------------------
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--------------Tin-Through HoleTO-220-334.535924gSILICON-55°C~150°C TJTubee3Active1 (Unlimited)3EAR99Other Transistors-60V2W-10AD45H31Single2WSWITCHINGPNPPNP60V10A40 @ 4A 1V10μATO-220AB1V @ 400mA, 8A60V-40MHz1V60V5V60-9.28mm10.28mm4.82mmNo SVHCNoROHS3 CompliantLead FreeACTIVE (Last Updated: 1 day ago)8 WeeksNO2004yesLEADFORM OPTIONS ARE AVAILABLE26040MHz40COLLECTOR40MHz----------
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--------------------SILICON--e3Obsolete1 (Unlimited)3------31--SWITCHINGPNP-----TO-220AB---40MHz----------ROHS3 Compliant---NO-yes-NOT SPECIFIED-NOT SPECIFIED--MATTE TINSINGLETHROUGH-HOLEunknownR-PSFM-T3COMMERCIALSINGLE10A4080V-
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