STMicroelectronics D45H5
- Part Number:
- D45H5
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2465899-D45H5
- Description:
- TRANS PNP 45V 10A TO-220
- Datasheet:
- D45H5
STMicroelectronics D45H5 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics D45H5.
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-45V
- Max Power Dissipation50W
- Current Rating-10A
- Base Part NumberD45H5
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation50W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)-45V
- Max Collector Current10A
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 4A 1V
- Current - Collector Cutoff (Max)10μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic1V @ 400mA, 8A
- Collector Emitter Breakdown Voltage-45V
- Voltage - Collector Emitter Breakdown (Max)45V
- Transition Frequency40MHz
- Collector Emitter Saturation Voltage-1V
- Collector Base Voltage (VCBO)-5V
- Emitter Base Voltage (VEBO)-5V
- hFE Min60
- VCEsat-Max1 V
- Height6.35mm
- Length25.4mm
- Width6.35mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
D45H5 Overview
This device has a DC current gain of 40 @ 4A 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -1V.A VCE saturation (Max) of 1V @ 400mA, 8A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -10A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 40MHz.Collector Emitter Breakdown occurs at 45VV - Maximum voltage.A maximum collector current of 10A volts is possible.
D45H5 Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at -5V
the current rating of this device is -10A
a transition frequency of 40MHz
D45H5 Applications
There are a lot of STMicroelectronics
D45H5 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 40 @ 4A 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -1V.A VCE saturation (Max) of 1V @ 400mA, 8A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -10A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 40MHz.Collector Emitter Breakdown occurs at 45VV - Maximum voltage.A maximum collector current of 10A volts is possible.
D45H5 Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at -5V
the current rating of this device is -10A
a transition frequency of 40MHz
D45H5 Applications
There are a lot of STMicroelectronics
D45H5 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
D45H5 More Descriptions
Power Bipolar Transistor, 10A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans GP BJT PNP 45V 10A 3-Pin(3 Tab) TO-220 Tube
Bipolar Transistors - BJT PNP General Purpose
Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage, V(br)ceo:45V; DC Current Gain Min (hfe):40; Package/Case:TO-220; Collector Current @ hfe:4µA; DC Collector Current:10A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
TRANSISTOR, PNP, 45V, 8A, TO-220; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -45V; Transition Frequency ft: -; Power Dissipation Pd: 50W; DC Collector Current: 10A; DC Current Gain hFE: 120hFE; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Application Code: GP; Collector Emitter Saturation Voltage Vce(on): 1V; Continuous Collector Current Ic Max: 10A; Current Ic @ Vce Sat: 8A; Current Ic Continuous a Max: -8A; Current Ic hFE: 2A; Hfe Min: 60; Hfe Typ: 120; No. of Transistors: 1; Power Dissipation Ptot Max: 50W; Termination Type: Through Hole
Trans GP BJT PNP 45V 10A 3-Pin(3 Tab) TO-220 Tube
Bipolar Transistors - BJT PNP General Purpose
Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage, V(br)ceo:45V; DC Current Gain Min (hfe):40; Package/Case:TO-220; Collector Current @ hfe:4µA; DC Collector Current:10A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
TRANSISTOR, PNP, 45V, 8A, TO-220; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -45V; Transition Frequency ft: -; Power Dissipation Pd: 50W; DC Collector Current: 10A; DC Current Gain hFE: 120hFE; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Application Code: GP; Collector Emitter Saturation Voltage Vce(on): 1V; Continuous Collector Current Ic Max: 10A; Current Ic @ Vce Sat: 8A; Current Ic Continuous a Max: -8A; Current Ic hFE: 2A; Hfe Min: 60; Hfe Typ: 120; No. of Transistors: 1; Power Dissipation Ptot Max: 50W; Termination Type: Through Hole
The three parts on the right have similar specifications to D45H5.
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ImagePart NumberManufacturerContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingBase Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Transition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinVCEsat-MaxHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeLifecycle StatusFactory Lead TimePublishedPbfree CodeFrequencyGain Bandwidth ProductCase ConnectionSurface MountAdditional FeaturePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)View Compare
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D45H5TinThrough HoleThrough HoleTO-220-334.535924gSILICON150°C TJTubee3Obsolete1 (Unlimited)3EAR99Other Transistors-45V50W-10AD45H531Single50WSWITCHINGPNPPNP-45V10A40 @ 4A 1V10μATO-220AB1V @ 400mA, 8A-45V45V40MHz-1V-5V-5V601 V6.35mm25.4mm6.35mmNo SVHCNoROHS3 CompliantLead Free------------
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TinThrough HoleThrough HoleTO-220-331.8gSILICON-55°C~150°C TJTubee3Obsolete1 (Unlimited)3EAR99Other Transistors-30V60W-8AD45H-1Single60WSWITCHINGPNPPNP30V8A100 @ 8A 5V10μA ICBOTO-220AB1V @ 400mA, 8A30V-25MHz1V-1.5V100-9.2mm9.9mm4.5mm-NoRoHS CompliantLead FreeCONSULT SALES OFFICE (Last Updated: 1 week ago)17 Weeks2002yes25MHz25MHz-----
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TinThrough HoleThrough HoleTO-220-334.535924gSILICON150°C TJTubee3Obsolete1 (Unlimited)3EAR99Other Transistors-60V50W8AD45H831Single50WSWITCHINGPNPPNP60V10A40 @ 4A 1V10μATO-220AB1V @ 400mA, 8A60V-40MHz1V60V5V601 V9.15mm10.4mm4.6mmNo SVHCNoROHS3 CompliantLead Free---yes--COLLECTOR----
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Tin-Through HoleTO-220-334.535924gSILICON-55°C~150°C TJTubee3Active1 (Unlimited)3EAR99Other Transistors-60V2W-10AD45H31Single2WSWITCHINGPNPPNP60V10A40 @ 4A 1V10μATO-220AB1V @ 400mA, 8A60V-40MHz1V60V5V60-9.28mm10.28mm4.82mmNo SVHCNoROHS3 CompliantLead FreeACTIVE (Last Updated: 1 day ago)8 Weeks2004yes40MHz40MHzCOLLECTORNOLEADFORM OPTIONS ARE AVAILABLE26040
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