Fairchild/ON Semiconductor D45H2A
- Part Number:
- D45H2A
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3068973-D45H2A
- Description:
- TRANS PNP 30V 8A TO-220
- Datasheet:
- TO220B03 Pkg Drawing
Fairchild/ON Semiconductor D45H2A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor D45H2A.
- Lifecycle StatusCONSULT SALES OFFICE (Last Updated: 1 week ago)
- Factory Lead Time17 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Weight1.8g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2002
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-30V
- Max Power Dissipation60W
- Current Rating-8A
- Frequency25MHz
- Base Part NumberD45H
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation60W
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product25MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current8A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 8A 5V
- Current - Collector Cutoff (Max)10μA ICBO
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic1V @ 400mA, 8A
- Collector Emitter Breakdown Voltage30V
- Transition Frequency25MHz
- Collector Emitter Saturation Voltage1V
- Emitter Base Voltage (VEBO)1.5V
- hFE Min100
- Height9.2mm
- Length9.9mm
- Width4.5mm
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
D45H2A Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 8A 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 400mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 1.5V.Its current rating is -8A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 25MHz.During maximum operation, collector current can be as low as 8A volts.
D45H2A Features
the DC current gain for this device is 100 @ 8A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 1.5V
the current rating of this device is -8A
a transition frequency of 25MHz
D45H2A Applications
There are a lot of ON Semiconductor
D45H2A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 8A 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 400mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 1.5V.Its current rating is -8A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 25MHz.During maximum operation, collector current can be as low as 8A volts.
D45H2A Features
the DC current gain for this device is 100 @ 8A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 1.5V
the current rating of this device is -8A
a transition frequency of 25MHz
D45H2A Applications
There are a lot of ON Semiconductor
D45H2A applications of single BJT transistors.
Inverter
Interface
Driver
Muting
D45H2A More Descriptions
Transistor General Purpose BJT PNP 30 Volt 8 Amp 3-Pin 3 Tab TO-220 Rail
Power Bipolar Transistor, 8A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT PNP Power Transistor
Trans GP BJT PNP 30V 8A 3-Pin(3 Tab) TO-220AB Rail - Rail/Tube
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Power Bipolar Transistor, 8A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT PNP Power Transistor
Trans GP BJT PNP 30V 8A 3-Pin(3 Tab) TO-220AB Rail - Rail/Tube
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
The three parts on the right have similar specifications to D45H2A.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyBase Part NumberNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageEmitter Base Voltage (VEBO)hFE MinHeightLengthWidthRadiation HardeningRoHS StatusLead FreeVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Pin CountCase ConnectionCollector Base Voltage (VCBO)VCEsat-MaxREACH SVHCVoltage - Collector Emitter Breakdown (Max)View Compare
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D45H2ACONSULT SALES OFFICE (Last Updated: 1 week ago)17 WeeksTinThrough HoleThrough HoleTO-220-331.8gSILICON-55°C~150°C TJTube2002e3yesObsolete1 (Unlimited)3EAR99Other Transistors-30V60W-8A25MHzD45H1Single60WSWITCHING25MHzPNPPNP30V8A100 @ 8A 5V10μA ICBOTO-220AB1V @ 400mA, 8A30V25MHz1V1.5V1009.2mm9.9mm4.5mmNoRoHS CompliantLead Free---------------------
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------------------------------------------------60V1V @ 400mA, 8APNPTO-220-3-60WTubeTO-220-3-55°C ~ 150°C (TJ)Through Hole40MHz40 @ 4A, 1V10µA (ICBO)8A------
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--TinThrough HoleThrough HoleTO-220-334.535924gSILICON150°C TJTube-e3yesObsolete1 (Unlimited)3EAR99Other Transistors-60V50W8A-D45H81Single50WSWITCHING-PNPPNP60V10A40 @ 4A 1V10μATO-220AB1V @ 400mA, 8A60V40MHz1V5V609.15mm10.4mm4.6mmNoROHS3 CompliantLead Free--------------3COLLECTOR60V1 VNo SVHC-
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--TinThrough HoleThrough HoleTO-220-334.535924gSILICON150°C TJTube-e3-Obsolete1 (Unlimited)3EAR99Other Transistors-45V50W-10A-D45H51Single50WSWITCHING-PNPPNP-45V10A40 @ 4A 1V10μATO-220AB1V @ 400mA, 8A-45V40MHz-1V-5V606.35mm25.4mm6.35mmNoROHS3 CompliantLead Free--------------3--5V1 VNo SVHC45V
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