Nexperia USA Inc. BSS138P,215

Name: BSS138P,215
Brand: Nexperia USA Inc.
SKU: 2848585-BSS138P,215
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSS138P,215

Manufacturer:: Nexperia USA Inc.

Ventron No:: 2848585-BSS138P,215

Description:: MOSFET N-CH 60V 360MA TO-236AB

ECAD Model:

Datasheet:: BSS138P,215

Specifications

Nexperia USA Inc. BSS138P,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BSS138P,215.

Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TA
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101, TrenchMOS™
Published
2010
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Tin (Sn)
Additional Feature
LOGIC LEVEL COMPATIBLE
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Pin Count
3
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
350mW Ta 1.14W Tc
Operating Mode
ENHANCEMENT MODE
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.6 Ω @ 300mA, 10V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
50pF @ 10V
Current - Continuous Drain (Id) @ 25°C
360mA Ta
Gate Charge (Qg) (Max) @ Vgs
0.8nC @ 4.5V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
DS Breakdown Voltage-Min
60V
RoHS Status
ROHS3 Compliant

Description

BSS138P,215 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 50pF @ 10V is its maximum input capacitance.Normal operation requires that the DS breakdown voltage remain above 60V.For this transistor to work, a voltage 60V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

BSS138P,215 Features
a 60V drain to source voltage (Vdss)

BSS138P,215 Applications
There are a lot of Nexperia USA Inc.
BSS138P,215 applications of single MOSFETs transistors.

AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies

BSS138P,215 More Descriptions

BSS138P Series 60 V 1.6 Ohm 350 mW 0.72 nC N-Channel SMT TrenchMOS FET - SOT-23
60V 360mA 1.6¦¸@10V,300mA 350mW 1.5V@250¦ÌA N Channel SOT-23(SOT-23-3) MOSFETs ROHS
Trans MOSFET N-CH 60V 0.36A Automotive 3-Pin TO-236AB T/R
MOSFET, N CH, 60V, 0.36A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:360mA; Source Voltage Vds:60V; On Resistance
Small Signal Field-Effect Transistor, 0.36A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, N CH, 60V, 0.36A, SOT23; Transistor Polarity: N Channel; Continuous Drain Current Id: 360mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.9ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.2V; Power Dissipation Pd: 420mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 360mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Voltage Vgs Max: 20V

Product Comparison

The three parts on the right have similar specifications to BSS138P,215.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Additional Feature

Technology

Terminal Position

Terminal Form

Pin Count

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

DS Breakdown Voltage-Min

RoHS Status

ECCN Code

HTS Code

Subcategory

JESD-30 Code

Qualification Status

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Feedback Cap-Max (Crss)

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

View Compare
BSS138P,215

Nexperia USA Inc.

4 Weeks

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

3

SILICON

-55°C~150°C TA

Tape & Reel (TR)

Automotive, AEC-Q101, TrenchMOS™

2010

e3

Active

1 (Unlimited)

3

Tin (Sn)

LOGIC LEVEL COMPATIBLE

MOSFET (Metal Oxide)

DUAL

GULL WING

3

1

SINGLE WITH BUILT-IN DIODE

350mW Ta 1.14W Tc

ENHANCEMENT MODE

N-Channel

SWITCHING

1.6 Ω @ 300mA, 10V

1.5V @ 250μA

50pF @ 10V

360mA Ta

0.8nC @ 4.5V

60V

10V

±20V

60V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-
BSS138N E8004

Infineon Technologies

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

2012

-

Discontinued

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

360mW Ta

-

N-Channel

-

3.5 Ω @ 230mA, 10V

1.4V @ 250μA

41pF @ 25V

230mA Ta

1.4nC @ 10V

60V

4.5V 10V

±20V

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

BSS138P,215 vs BSS138N E8004
BSS123 E6433

Infineon Technologies

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

-

e0

Obsolete

1 (Unlimited)

3

Tin/Lead (Sn/Pb)

LOGIC LEVEL COMPATIBLE

MOSFET (Metal Oxide)

DUAL

GULL WING

-

1

SINGLE WITH BUILT-IN DIODE

360mW Ta

ENHANCEMENT MODE

N-Channel

SWITCHING

6 Ω @ 170mA, 10V

1.8V @ 50μA

69pF @ 25V

170mA Ta

2.67nC @ 10V

100V

4.5V 10V

±20V

100V

Non-RoHS Compliant

EAR99

8541.21.00.95

FET General Purpose Power

R-PDSO-G3

Not Qualified

0.17A

10Ohm

6 pF

-

-

-

BSS138P,215 vs BSS123 E6433
BSS138W L6433

Infineon Technologies

-

Surface Mount

SC-70, SOT-323

YES

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

SIPMOS®

2007

e3

Obsolete

1 (Unlimited)

3

MATTE TIN

LOGIC LEVEL COMPATIBLE

MOSFET (Metal Oxide)

DUAL

GULL WING

3

1

SINGLE WITH BUILT-IN DIODE

500mW Ta

ENHANCEMENT MODE

N-Channel

-

3.5 Ω @ 220mA, 10V

1.4V @ 26μA

43pF @ 25V

280mA Ta

1.5nC @ 10V

60V

4.5V 10V

±20V

60V

RoHS Compliant

EAR99

8541.21.00.95

FET General Purpose Power

R-PDSO-G3

Not Qualified

0.28A

-

4.2 pF

260

compliant

40

BSS138P,215 vs BSS138W L6433