Diodes Incorporated BSS138W-7

Name: BSS138W-7
Brand: Diodes Incorporated
SKU: 3813726-BSS138W-7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSS138W-7

Manufacturer:: Diodes Incorporated

Ventron No:: 3813726-BSS138W-7

Description:: MOSFET N-CH 50V 0.2A SOT323

ECAD Model:

Datasheet:: BSS138W-7

Specifications

Diodes Incorporated BSS138W-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BSS138W-7.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Weight
6.208546mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e0
Pbfree Code
no
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Voltage - Rated DC
50V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
235
Reach Compliance Code
not_compliant
Current Rating
200mA
Time@Peak Reflow Temperature-Max (s)
10
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
200mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
200mW
Turn On Delay Time
20 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3.5 Ω @ 220mA, 10V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
50pF @ 10V
Current - Continuous Drain (Id) @ 25°C
200mA Ta
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Turn-Off Delay Time
20 ns
Continuous Drain Current (ID)
200mA
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
0.2A
Drain to Source Breakdown Voltage
50V
Feedback Cap-Max (Crss)
8 pF
Height
1mm
Length
2.2mm
Width
1.35mm
REACH SVHC
No SVHC
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead

Description

BSS138W-7 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 50pF @ 10V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 200mA.With a drain-source breakdown voltage of 50V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 50V.0.2A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 20 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 20 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.

BSS138W-7 Features
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 50V voltage
the turn-off delay time is 20 ns

BSS138W-7 Applications
There are a lot of Diodes Incorporated
BSS138W-7 applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

BSS138W-7 More Descriptions

Transistor - FET N-Channel 50V 200mW
Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 50V 0.2A SOT323
OEMs, CMs ONLY (NO BROKERS)
MOSFET 50V 200mW

Product Comparison

The three parts on the right have similar specifications to BSS138W-7.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Feedback Cap-Max (Crss)

Height

Length

Width

REACH SVHC

RoHS Status

Lead Free

Surface Mount

Series

Terminal Finish

Additional Feature

HTS Code

Subcategory

JESD-30 Code

Configuration

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

View Compare
BSS138W-7

Diodes Incorporated

Surface Mount

Surface Mount

SC-70, SOT-323

3

6.208546mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2006

e0

no

Discontinued

1 (Unlimited)

3

EAR99

50V

MOSFET (Metal Oxide)

DUAL

GULL WING

235

not_compliant

200mA

10

3

Not Qualified

1

1

200mW Ta

Single

ENHANCEMENT MODE

200mW

20 ns

N-Channel

SWITCHING

3.5 Ω @ 220mA, 10V

1.5V @ 250μA

50pF @ 10V

200mA Ta

10V

±20V

20 ns

200mA

20V

0.2A

50V

8 pF

1mm

2.2mm

1.35mm

No SVHC

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-
BSS123 E6433

Infineon Technologies

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

e0

-

Obsolete

1 (Unlimited)

3

EAR99

-

MOSFET (Metal Oxide)

DUAL

GULL WING

-

-

-

-

-

Not Qualified

1

-

360mW Ta

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

6 Ω @ 170mA, 10V

1.8V @ 50μA

69pF @ 25V

170mA Ta

4.5V 10V

±20V

-

-

-

0.17A

-

6 pF

-

-

-

-

Non-RoHS Compliant

-

YES

SIPMOS®

Tin/Lead (Sn/Pb)

LOGIC LEVEL COMPATIBLE

8541.21.00.95

FET General Purpose Power

R-PDSO-G3

SINGLE WITH BUILT-IN DIODE

2.67nC @ 10V

100V

10Ohm

100V

BSS138W-7 vs BSS123 E6433
BSS138W L6433

Infineon Technologies

-

Surface Mount

SC-70, SOT-323

-

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2007

e3

-

Obsolete

1 (Unlimited)

3

EAR99

-

MOSFET (Metal Oxide)

DUAL

GULL WING

260

compliant

-

40

3

Not Qualified

1

-

500mW Ta

-

ENHANCEMENT MODE

-

-

N-Channel

-

3.5 Ω @ 220mA, 10V

1.4V @ 26μA

43pF @ 25V

280mA Ta

4.5V 10V

±20V

-

-

-

0.28A

-

4.2 pF

-

-

-

-

RoHS Compliant

-

YES

SIPMOS®

MATTE TIN

LOGIC LEVEL COMPATIBLE

8541.21.00.95

FET General Purpose Power

R-PDSO-G3

SINGLE WITH BUILT-IN DIODE

1.5nC @ 10V

60V

-

60V

BSS138W-7 vs BSS138W L6433
BSS119 E7978

Infineon Technologies

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

2002

-

-

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

360mW Ta

-

-

-

-

N-Channel

-

6 Ω @ 170mA, 10V

2.3V @ 50μA

78pF @ 25V

170mA Ta

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

SIPMOS®

-

-

-

-

-

-

2.5nC @ 10V

100V

-

-

BSS138W-7 vs BSS119 E7978