Fairchild/ON Semiconductor BSS138
- Part Number:
- BSS138
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2477934-BSS138
- Description:
- MOSFET N-CH 50V 220MA SOT-23
- Datasheet:
- BSS138
Fairchild/ON Semiconductor BSS138 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BSS138.
- Surface MountYES
- Number of Terminals3
- Transistor Element MaterialSILICON
- JESD-609 Codee3
- Pbfree Codeicon-pbfree yes
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureLOGIC LEVEL COMPATIBLE
- HTS Code8541.21.00.95
- SubcategoryFET General Purpose Power
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codecompliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PDSO-G3
- Qualification StatusNot Qualified
- Operating Temperature (Max)150°C
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Operating ModeENHANCEMENT MODE
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (Abs) (ID)0.2A
- Drain-source On Resistance-Max6Ohm
- DS Breakdown Voltage-Min50V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max (Abs)0.36W
- Feedback Cap-Max (Crss)10 pF
- RoHS StatusRoHS Compliant
BSS138 Overview
The drain current is the maximum continuous current this device can conduct, which is 0.2A.A normal operation of the DS requires keeping the breakdown voltage above 50V.
BSS138 Features
BSS138 Applications
There are a lot of Fairchild Semiconductor Corporation
BSS138 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
The drain current is the maximum continuous current this device can conduct, which is 0.2A.A normal operation of the DS requires keeping the breakdown voltage above 50V.
BSS138 Features
BSS138 Applications
There are a lot of Fairchild Semiconductor Corporation
BSS138 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
BSS138 More Descriptions
Trans MOSFET N Channel 50 Volt 0.22A 3-Pin SOT-23 Tape and Reel
N-Channel MOSFET, Logic Level Enhancement Mode, 50V, 220mA
Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R
Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Product Highlights: 0.22 A, 50 V. RDS(ON) = 3.5 W @ VGS = 10 V High density cell design for extremely low RDS(ON). Rugged and Relaible. Compact industry standard SOT-23 surface mount package.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 220 / Drain-Source Voltage (Vds) V = 50 / ON Resistance (Rds(on)) Ohm = 6 / Gate-Source Voltage V = 20 / Fall Time ns = 14 / Rise Time ns = 18 / Turn-OFF Delay Time ns = 36 / Turn-ON Delay Time ns = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) mW = 360
N-Channel MOSFET, Logic Level Enhancement Mode, 50V, 220mA
Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R
Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Product Highlights: 0.22 A, 50 V. RDS(ON) = 3.5 W @ VGS = 10 V High density cell design for extremely low RDS(ON). Rugged and Relaible. Compact industry standard SOT-23 surface mount package.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 220 / Drain-Source Voltage (Vds) V = 50 / ON Resistance (Rds(on)) Ohm = 6 / Gate-Source Voltage V = 20 / Fall Time ns = 14 / Rise Time ns = 18 / Turn-OFF Delay Time ns = 36 / Turn-ON Delay Time ns = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) mW = 360
The three parts on the right have similar specifications to BSS138.
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ImagePart NumberManufacturerSurface MountNumber of TerminalsTransistor Element MaterialJESD-609 CodePbfree CodeMoisture Sensitivity Level (MSL)ECCN CodeTerminal FinishAdditional FeatureHTS CodeSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusOperating Temperature (Max)Number of ElementsConfigurationOperating ModeTransistor ApplicationPolarity/Channel TypeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinFET TechnologyPower Dissipation-Max (Abs)Feedback Cap-Max (Crss)RoHS StatusMounting TypePackage / CaseOperating TemperaturePackagingSeriesPart StatusNumber of TerminationsTechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)PublishedView Compare
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BSS138YES3SILICONe3icon-pbfree yes1 (Unlimited)EAR99Matte Tin (Sn)LOGIC LEVEL COMPATIBLE8541.21.00.95FET General Purpose PowerDUALGULL WING260compliantNOT SPECIFIED3R-PDSO-G3Not Qualified150°C1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODESWITCHINGN-CHANNEL0.2A6Ohm50VMETAL-OXIDE SEMICONDUCTOR0.36W10 pFRoHS Compliant--------------------
-
YES-SILICONe0-1 (Unlimited)EAR99Tin/Lead (Sn/Pb)LOGIC LEVEL COMPATIBLE8541.21.00.95FET General Purpose PowerDUALGULL WING----R-PDSO-G3Not Qualified-1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODESWITCHING-0.17A10Ohm100V--6 pFNon-RoHS CompliantSurface MountTO-236-3, SC-59, SOT-23-3-55°C~150°C TJTape & Reel (TR)SIPMOS®Obsolete3MOSFET (Metal Oxide)360mW TaN-Channel6 Ω @ 170mA, 10V1.8V @ 50μA69pF @ 25V170mA Ta2.67nC @ 10V100V4.5V 10V±20V-
-
YES-SILICONe3-1 (Unlimited)EAR99MATTE TINLOGIC LEVEL COMPATIBLE8541.21.00.95FET General Purpose PowerDUALGULL WING260compliant403R-PDSO-G3Not Qualified-1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODE--0.28A-60V--4.2 pFRoHS CompliantSurface MountSC-70, SOT-323-55°C~150°C TJTape & Reel (TR)SIPMOS®Obsolete3MOSFET (Metal Oxide)500mW TaN-Channel3.5 Ω @ 220mA, 10V1.4V @ 26μA43pF @ 25V280mA Ta1.5nC @ 10V60V4.5V 10V±20V2007
-
-----1 (Unlimited)--------------------------Surface MountTO-236-3, SC-59, SOT-23-3-55°C~150°C TJTape & Reel (TR)SIPMOS®Obsolete-MOSFET (Metal Oxide)360mW TaN-Channel6 Ω @ 170mA, 10V2.3V @ 50μA78pF @ 25V170mA Ta2.5nC @ 10V100V4.5V 10V±20V2002
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