Diodes Incorporated BSS127S-7
- Part Number:
- BSS127S-7
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2477976-BSS127S-7
- Description:
- MOSFET N-CH 600V 0.05A SOT23
- Datasheet:
- BSS127S-7
Diodes Incorporated BSS127S-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BSS127S-7.
- Factory Lead Time16 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max610mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.25W
- Turn On Delay Time5 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs160 Ω @ 16mA, 10V
- Vgs(th) (Max) @ Id4.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds21.8pF @ 25V
- Current - Continuous Drain (Id) @ 25°C50mA Ta
- Gate Charge (Qg) (Max) @ Vgs1.08nC @ 10V
- Rise Time7.2ns
- Drive Voltage (Max Rds On,Min Rds On)5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)168 ns
- Turn-Off Delay Time28.7 ns
- Continuous Drain Current (ID)70mA
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)0.07A
- Drain to Source Breakdown Voltage600V
- Height1.1mm
- Length3mm
- Width1.4mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BSS127S-7 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 21.8pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 70mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Drain current refers to the maximum continuous current a device can conduct, and it is 0.07A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 28.7 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 5 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (5V 10V), this device contributes to a reduction in overall power consumption.
BSS127S-7 Features
a continuous drain current (ID) of 70mA
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 28.7 ns
BSS127S-7 Applications
There are a lot of Diodes Incorporated
BSS127S-7 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 21.8pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 70mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Drain current refers to the maximum continuous current a device can conduct, and it is 0.07A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 28.7 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 5 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (5V 10V), this device contributes to a reduction in overall power consumption.
BSS127S-7 Features
a continuous drain current (ID) of 70mA
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 28.7 ns
BSS127S-7 Applications
There are a lot of Diodes Incorporated
BSS127S-7 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
BSS127S-7 More Descriptions
Single N-Channel 600 V 190 Ohm 1.08 nC 1.25 W Silicon SMT Mosfet - SOT-23
Trans MOSFET N-CH 600V 0.07A Automotive 3-Pin SOT-23 T/R
N-Channel Enhancement MOSFET SOT-23 | Diodes Inc BSS127S-7
MOSFET, N-CH, 600V, 0.05A, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 50mA; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 80ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 610mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Trans MOSFET N-CH 600V 0.07A Automotive 3-Pin SOT-23 T/R
N-Channel Enhancement MOSFET SOT-23 | Diodes Inc BSS127S-7
MOSFET, N-CH, 600V, 0.05A, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 50mA; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 80ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 610mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
The three parts on the right have similar specifications to BSS127S-7.
-
ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageHeightLengthWidthREACH SVHCRoHS StatusLead FreeSeriesDrain to Source Voltage (Vdss)Surface MountTerminal FinishAdditional FeatureHTS CodeJESD-30 CodeQualification StatusConfigurationDrain-source On Resistance-MaxDS Breakdown Voltage-MinFeedback Cap-Max (Crss)View Compare
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BSS127S-716 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-337.994566mgSILICON-55°C~150°C TJTape & Reel (TR)2013e3yesActive1 (Unlimited)3EAR99FET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING26040311610mW TaSingleENHANCEMENT MODE1.25W5 nsN-ChannelSWITCHING160 Ω @ 16mA, 10V4.5V @ 250μA21.8pF @ 25V50mA Ta1.08nC @ 10V7.2ns5V 10V±20V168 ns28.7 ns70mA20V0.07A600V1.1mm3mm1.4mmNo SVHCROHS3 CompliantLead Free-------------
-
---Surface MountTO-236-3, SC-59, SOT-23-3----55°C~150°C TJTape & Reel (TR)2012--Discontinued1 (Unlimited)---MOSFET (Metal Oxide)-------360mW Ta----N-Channel-3.5 Ω @ 230mA, 10V1.4V @ 250μA41pF @ 25V230mA Ta1.4nC @ 10V-4.5V 10V±20V----------ROHS3 Compliant-SIPMOS®60V----------
-
---Surface MountTO-236-3, SC-59, SOT-23-3--SILICON-55°C~150°C TJTape & Reel (TR)-e0-Obsolete1 (Unlimited)3EAR99FET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING---1-360mW Ta-ENHANCEMENT MODE--N-ChannelSWITCHING6 Ω @ 170mA, 10V1.8V @ 50μA69pF @ 25V170mA Ta2.67nC @ 10V-4.5V 10V±20V----0.17A-----Non-RoHS Compliant-SIPMOS®100VYESTin/Lead (Sn/Pb)LOGIC LEVEL COMPATIBLE8541.21.00.95R-PDSO-G3Not QualifiedSINGLE WITH BUILT-IN DIODE10Ohm100V6 pF
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---Surface MountTO-236-3, SC-59, SOT-23-3----55°C~150°C TJTape & Reel (TR)2002--Obsolete1 (Unlimited)---MOSFET (Metal Oxide)-------360mW Ta----N-Channel-6 Ω @ 170mA, 10V2.3V @ 50μA78pF @ 25V170mA Ta2.5nC @ 10V-4.5V 10V±20V------------SIPMOS®100V----------
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