BSS127S-7

Diodes Incorporated BSS127S-7

Part Number:
BSS127S-7
Manufacturer:
Diodes Incorporated
Ventron No:
2477976-BSS127S-7
Description:
MOSFET N-CH 600V 0.05A SOT23
ECAD Model:
Datasheet:
BSS127S-7

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Specifications
Diodes Incorporated BSS127S-7 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated BSS127S-7.
  • Factory Lead Time
    16 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2013
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    610mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.25W
  • Turn On Delay Time
    5 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    160 Ω @ 16mA, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    21.8pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    50mA Ta
  • Gate Charge (Qg) (Max) @ Vgs
    1.08nC @ 10V
  • Rise Time
    7.2ns
  • Drive Voltage (Max Rds On,Min Rds On)
    5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    168 ns
  • Turn-Off Delay Time
    28.7 ns
  • Continuous Drain Current (ID)
    70mA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    0.07A
  • Drain to Source Breakdown Voltage
    600V
  • Height
    1.1mm
  • Length
    3mm
  • Width
    1.4mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
BSS127S-7 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 21.8pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 70mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Drain current refers to the maximum continuous current a device can conduct, and it is 0.07A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 28.7 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 5 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (5V 10V), this device contributes to a reduction in overall power consumption.

BSS127S-7 Features
a continuous drain current (ID) of 70mA
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 28.7 ns


BSS127S-7 Applications
There are a lot of Diodes Incorporated
BSS127S-7 applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
BSS127S-7 More Descriptions
Single N-Channel 600 V 190 Ohm 1.08 nC 1.25 W Silicon SMT Mosfet - SOT-23
Trans MOSFET N-CH 600V 0.07A Automotive 3-Pin SOT-23 T/R
N-Channel Enhancement MOSFET SOT-23 | Diodes Inc BSS127S-7
MOSFET, N-CH, 600V, 0.05A, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 50mA; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 80ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 610mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Product Comparison
The three parts on the right have similar specifications to BSS127S-7.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    Series
    Drain to Source Voltage (Vdss)
    Surface Mount
    Terminal Finish
    Additional Feature
    HTS Code
    JESD-30 Code
    Qualification Status
    Configuration
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Feedback Cap-Max (Crss)
    View Compare
  • BSS127S-7
    BSS127S-7
    16 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    7.994566mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2013
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    40
    3
    1
    1
    610mW Ta
    Single
    ENHANCEMENT MODE
    1.25W
    5 ns
    N-Channel
    SWITCHING
    160 Ω @ 16mA, 10V
    4.5V @ 250μA
    21.8pF @ 25V
    50mA Ta
    1.08nC @ 10V
    7.2ns
    5V 10V
    ±20V
    168 ns
    28.7 ns
    70mA
    20V
    0.07A
    600V
    1.1mm
    3mm
    1.4mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BSS138N E8004
    -
    -
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    -
    -
    Discontinued
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    360mW Ta
    -
    -
    -
    -
    N-Channel
    -
    3.5 Ω @ 230mA, 10V
    1.4V @ 250μA
    41pF @ 25V
    230mA Ta
    1.4nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    SIPMOS®
    60V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BSS123 E6433
    -
    -
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    e0
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    -
    -
    1
    -
    360mW Ta
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    6 Ω @ 170mA, 10V
    1.8V @ 50μA
    69pF @ 25V
    170mA Ta
    2.67nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    0.17A
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    SIPMOS®
    100V
    YES
    Tin/Lead (Sn/Pb)
    LOGIC LEVEL COMPATIBLE
    8541.21.00.95
    R-PDSO-G3
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    10Ohm
    100V
    6 pF
  • BSS119 E7978
    -
    -
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2002
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    360mW Ta
    -
    -
    -
    -
    N-Channel
    -
    6 Ω @ 170mA, 10V
    2.3V @ 50μA
    78pF @ 25V
    170mA Ta
    2.5nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    SIPMOS®
    100V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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