Infineon Technologies BSP324H6327XTSA1

Name: BSP324H6327XTSA1
Brand: Infineon Technologies
SKU: 2482540-BSP324H6327XTSA1
Availability: InStock
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Part Number:: BSP324H6327XTSA1

Manufacturer:: Infineon Technologies

Ventron No:: 2482540-BSP324H6327XTSA1

Description:: MOSFET N-CH 400V 170MA SOT-223

ECAD Model:

Datasheet:: BSP324H6327XTSA1

Specifications

Infineon Technologies BSP324H6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSP324H6327XTSA1.

Factory Lead Time
10 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
3
Supplier Device Package
PG-SOT223-4
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Series
SIPMOS®
Published
2008
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Termination
SMD/SMT
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Power Dissipation-Max
1.8W Ta
Element Configuration
Single
Power Dissipation
1.7W
Turn On Delay Time
4.6 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
25Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id
2.3V @ 94μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
154pF @ 25V
Current - Continuous Drain (Id) @ 25°C
170mA Ta
Gate Charge (Qg) (Max) @ Vgs
5.9nC @ 10V
Rise Time
4.4ns
Drain to Source Voltage (Vdss)
400V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
68 ns
Turn-Off Delay Time
17 ns
Continuous Drain Current (ID)
170mA
Threshold Voltage
1.9V
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
400V
Dual Supply Voltage
400V
Input Capacitance
154pF
Drain to Source Resistance
13.6Ohm
Rds On Max
25 Ω
Nominal Vgs
1.9 V
Height
1.6mm
Length
6.5mm
Width
6.7mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BSP324H6327XTSA1 Overview
A device's maximal input capacitance is 154pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 170mA, which represents the maximum continuous current it can conduct.Its turn-off delay time is 17 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 13.6Ohm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 4.6 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.By using 400V, it can supply the maximum voltage from two sources.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 1.9V threshold voltage.This transistor requires a 400V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).

BSP324H6327XTSA1 Features
a continuous drain current (ID) of 170mA
the turn-off delay time is 17 ns
single MOSFETs transistor is 13.6Ohm
a threshold voltage of 1.9V
a 400V drain to source voltage (Vdss)

BSP324H6327XTSA1 Applications
There are a lot of Infineon Technologies
BSP324H6327XTSA1 applications of single MOSFETs transistors.

Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples

BSP324H6327XTSA1 More Descriptions

Single N-Channel 400 V 25 Ohm 4.54 nC SIPMOS® Power Mosfet - SOT-223
Trans MOSFET N-CH 400V 0.17A Automotive 4-Pin(3 Tab) SOT-223 T/R
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:170mA; Source Voltage Vds:400V; On Resistance Rds(on):13.6ohm;
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 170 / Drain-Source Voltage (Vds) V = 400 / ON Resistance (Rds(on)) Ohm = 25 / Gate-Source Voltage V = 20 / Fall Time ns = 68 / Rise Time ns = 4.4 / Turn-OFF Delay Time ns = 17 / Turn-ON Delay Time ns = 4.6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1.8
MOSFET, N, SOT-223; Transistor Polarity: N Channel; Continuous Drain Current Id: 170mA; Drain Source Voltage Vds: 400V; On Resistance Rds(on): 13.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Power Dissipation Pd: 1.7W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 170mA; Current Temperature: 25°C; External Depth: 7.3mm; External Length / Height: 1.7mm; External Width: 6.7mm; Full Power Rating Temperature: 25°C; Junction Temperature Tj Max: 150°C; Junction Temperature Tj Min: -55°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Ptot Max: 1.7W; Pulse Current Idm: 680mA; SMD Marking: BSP324; Tape Width: 12mm; Termination Type: Surface Mount Device; Voltage Vds Typ: 400V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 2.5V

Certification