Infineon Technologies BSC093N15NS5ATMA1

Name: BSC093N15NS5ATMA1
Brand: Infineon Technologies
SKU: 2482875-BSC093N15NS5ATMA1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSC093N15NS5ATMA1

Manufacturer:: Infineon Technologies

Ventron No:: 2482875-BSC093N15NS5ATMA1

Description:: MOSFET N-CH 150V 87A TDSON-8

ECAD Model:

Datasheet:: BSC093N15NS5ATMA1

Specifications

Infineon Technologies BSC093N15NS5ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSC093N15NS5ATMA1.

Factory Lead Time
26 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
OptiMOS™
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PDSO-F5
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Number of Channels
1
Power Dissipation-Max
139W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
139W
Case Connection
DRAIN
Turn On Delay Time
14 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
9.3m Ω @ 44A, 10V
Vgs(th) (Max) @ Id
4.6V @ 107μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
3230pF @ 75V
Current - Continuous Drain (Id) @ 25°C
87A Tc
Gate Charge (Qg) (Max) @ Vgs
40.7nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)
8V 10V
Vgs (Max)
±20V
Turn-Off Delay Time
14.4 ns
Continuous Drain Current (ID)
87A
Threshold Voltage
3.8V
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
150V
Drain-source On Resistance-Max
0.0093Ohm
Drain to Source Breakdown Voltage
150V
Max Junction Temperature (Tj)
150°C
Height
1.1mm
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead

Description

BSC093N15NS5ATMA1 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 3230pF @ 75V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 87A.With a drain-source breakdown voltage of 150V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 150V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 14.4 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 14 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.This device supports dual supply voltages maximally powered by 150V.3.8V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (8V 10V) reduces this device's overall power consumption.

BSC093N15NS5ATMA1 Features
a continuous drain current (ID) of 87A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 14.4 ns
a threshold voltage of 3.8V

BSC093N15NS5ATMA1 Applications
There are a lot of Infineon Technologies
BSC093N15NS5ATMA1 applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

BSC093N15NS5ATMA1 More Descriptions

Single N-Channel 150 V 9.3 mOhm 33 nC OptiMOS Power Mosfet - TDSON-8
MOSFET, N-CH, 150V, 87A, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:87A; Source Voltage Vds:150V; On Resistance
The new OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications, PG-TDSON-8, RoHSInfineon SCT
Mosfet, N-Ch, 150V, 87A, 150Deg C, 139W; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:87A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.8V Rohs Compliant: Yes |Infineon BSC093N15NS5ATMA1
MOSFET, N-CH, 150V, 87A, TDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 87A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.0079ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.8V; Power Dissipation Pd: 139W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The new OptiMOS 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DS(on) (up to 25 percent compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness. | Summary of Features: Lower R DS(on) without compromising FOM gd and FOM oss; Lower output charge; Ultra-low reverse recovery charge; Increased commutation ruggedness; Higher switching frequency possible | Benefits: Reduced paralleling; Size reduction enabled with SuperSO8 best-in-class; Higher power density designs; More rugged products; System cost reduction; Improved EMI behavior | Target Applications: Low voltage drives; Telecom; Solar

Product Comparison

The three parts on the right have similar specifications to BSC093N15NS5ATMA1.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Configuration

Number of Channels

Power Dissipation-Max

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Max Junction Temperature (Tj)

Height

RoHS Status

Lead Free

Additional Feature

Subcategory

Voltage - Rated DC

Current Rating

Pin Count

Qualification Status

Drain Current-Max (Abs) (ID)

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Supplier Device Package

Max Power Dissipation

Rise Time

Drain to Source Voltage (Vdss)

Input Capacitance

Rds On Max

View Compare
BSC093N15NS5ATMA1

Infineon Technologies

26 Weeks

Surface Mount

Surface Mount

8-PowerTDFN

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

OptiMOS™

2013

e3

yes

Active

1 (Unlimited)

5

EAR99

Tin (Sn)

MOSFET (Metal Oxide)

DUAL

FLAT

NOT SPECIFIED

not_compliant

NOT SPECIFIED

R-PDSO-F5

1

SINGLE WITH BUILT-IN DIODE

1

139W Tc

ENHANCEMENT MODE

139W

DRAIN

14 ns

N-Channel

SWITCHING

9.3m Ω @ 44A, 10V

4.6V @ 107μA

Halogen Free

3230pF @ 75V

87A Tc

40.7nC @ 10V

8V 10V

±20V

14.4 ns

87A

3.8V

20V

150V

0.0093Ohm

150V

150°C

1.1mm

ROHS3 Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BSC032N03S

Infineon Technologies

-

Surface Mount

Surface Mount

8-PowerTDFN

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

OptiMOS™

2004

e0

-

Discontinued

1 (Unlimited)

8

EAR99

Tin/Lead (Sn/Pb)

MOSFET (Metal Oxide)

DUAL

NO LEAD

235

-

NOT SPECIFIED

-

1

SINGLE WITH BUILT-IN DIODE

-

2.8W Ta 78W Tc

ENHANCEMENT MODE

-

-

-

N-Channel

SWITCHING

3.2m Ω @ 50A, 10V

2V @ 70μA

-

5080pF @ 15V

23A Ta 100A Tc

39nC @ 5V

4.5V 10V

±20V

-

50A

-

-

-

0.0049Ohm

-

-

-

Non-RoHS Compliant

Contains Lead

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

FET General Purpose Power

30V

50A

8

Not Qualified

23A

200A

550 mJ

-

-

-

-

-

-

BSC093N15NS5ATMA1 vs BSC032N03S
BSC042N03ST

Infineon Technologies

-

Surface Mount

Surface Mount

8-PowerTDFN

8

-

-55°C~150°C TJ

Tape & Reel (TR)

OptiMOS™

-

-

-

Discontinued

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

N-Channel

-

4.2mOhm @ 50A, 10V

2V @ 50μA

-

3660pF @ 15V

20A Ta 50A Tc

28nC @ 5V

4.5V 10V

±20V

-

50A

-

-

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

-

-

30V

50A

-

-

-

-

-

PG-TDSON-8-5

62.5W

5.8ns

30V

3.66nF

4.2 mΩ

BSC093N15NS5ATMA1 vs BSC042N03ST
BSC059N03ST

Infineon Technologies

-

Surface Mount

Surface Mount

8-PowerTDFN

8

-

-55°C~150°C TJ

Tape & Reel (TR)

OptiMOS™

-

-

-

Discontinued

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

N-Channel

-

5.5mOhm @ 50A, 10V

2V @ 35μA

-

2670pF @ 15V

19A Ta 89A Tc

21nC @ 5V

4.5V 10V

±20V

-

50A

-

-

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

-

-

30V

50A

-

-

-

-

-

PG-TDSON-8-1

48W

4.8ns

30V

2.67nF

5.5 mΩ

BSC093N15NS5ATMA1 vs BSC059N03ST