Infineon Technologies BSC032N03S
- Part Number:
- BSC032N03S
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2853886-BSC032N03S
- Description:
- MOSFET N-CH 30V 50A TDSON-8
- Datasheet:
- BSC032N03S
Infineon Technologies BSC032N03S technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSC032N03S.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerTDFN
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesOptiMOS™
- Published2004
- JESD-609 Codee0
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Additional FeatureAVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- SubcategoryFET General Purpose Power
- Voltage - Rated DC30V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormNO LEAD
- Peak Reflow Temperature (Cel)235
- Current Rating50A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count8
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max2.8W Ta 78W Tc
- Operating ModeENHANCEMENT MODE
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs3.2m Ω @ 50A, 10V
- Vgs(th) (Max) @ Id2V @ 70μA
- Input Capacitance (Ciss) (Max) @ Vds5080pF @ 15V
- Current - Continuous Drain (Id) @ 25°C23A Ta 100A Tc
- Gate Charge (Qg) (Max) @ Vgs39nC @ 5V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)50A
- Drain Current-Max (Abs) (ID)23A
- Drain-source On Resistance-Max0.0049Ohm
- Pulsed Drain Current-Max (IDM)200A
- Avalanche Energy Rating (Eas)550 mJ
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
BSC032N03S Features
Fast switching MOSFET for SMPS
Optimized technology for notebook DC/DC converters
Qualified according to JEDEC1 for target applications
N-channel
Logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Superior thermal resistance
Avalanche rated
dv /dt rated
BSC032N03S More Descriptions
N-Channel MOSFET 30V 100A Rds(on)=3.2mΩ 78W PG-TDSON-8 LF
MOSFET N-CH 30V 23A/100A TDSON
OEMs, CMs ONLY (NO BROKERS)
MOSFET N-CH 30V 23A/100A TDSON
OEMs, CMs ONLY (NO BROKERS)
The three parts on the right have similar specifications to BSC032N03S.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)RoHS StatusLead FreeJESD-30 CodeTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeGate to Source Voltage (Vgs)Supplier Device PackageMax Power DissipationDrain to Source Voltage (Vdss)Input CapacitanceRds On MaxPower DissipationCase ConnectionDrain to Source Breakdown VoltageView Compare
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BSC032N03SSurface MountSurface Mount8-PowerTDFN8SILICON-55°C~150°C TJTape & Reel (TR)OptiMOS™2004e0Discontinued1 (Unlimited)8EAR99Tin/Lead (Sn/Pb)AVALANCHE RATED, LOGIC LEVEL COMPATIBLEFET General Purpose Power30VMOSFET (Metal Oxide)DUALNO LEAD23550ANOT SPECIFIED8Not Qualified1SINGLE WITH BUILT-IN DIODE2.8W Ta 78W TcENHANCEMENT MODEN-ChannelSWITCHING3.2m Ω @ 50A, 10V2V @ 70μA5080pF @ 15V23A Ta 100A Tc39nC @ 5V4.5V 10V±20V50A23A0.0049Ohm200A550 mJNon-RoHS CompliantContains Lead---------------
-
Surface MountSurface Mount8-PowerTDFN8SILICON-55°C~150°C TJTape & Reel (TR)OptiMOS™2004e0Discontinued1 (Unlimited)5EAR99Tin/Lead (Sn/Pb)AVALANCHE RATED, LOGIC LEVEL COMPATIBLEFET General Purpose Power30VMOSFET (Metal Oxide)DUALNO LEAD23550ANOT SPECIFIED8Not Qualified1SINGLE WITH BUILT-IN DIODE2.8W Ta 104W TcENHANCEMENT MODEN-ChannelSWITCHING2.2m Ω @ 50A, 10V2V @ 100μA7490pF @ 15V28A Ta 100A Tc58nC @ 5V4.5V 10V±20V50A-0.0033Ohm200A-Non-RoHS CompliantContains LeadR-PDSO-N59.7 ns9ns7 ns42 ns20V--------
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Surface MountSurface Mount8-PowerTDFN8--55°C~150°C TJTape & Reel (TR)OptiMOS™--Discontinued1 (Unlimited)-----30VMOSFET (Metal Oxide)---50A-------N-Channel-4.2mOhm @ 50A, 10V2V @ 50μA3660pF @ 15V20A Ta 50A Tc28nC @ 5V4.5V 10V±20V50A----Non-RoHS CompliantContains Lead--5.8ns---PG-TDSON-8-562.5W30V3.66nF4.2 mΩ---
-
Surface MountSurface Mount8-PowerTDFN8SILICON-55°C~150°C TJTape & Reel (TR)OptiMOS™2004e3Obsolete1 (Unlimited)5EAR99MATTE TINAVALANCHE RATED, LOGIC LEVEL COMPATIBLEFET General Purpose Power30VMOSFET (Metal Oxide)DUALFLAT26050A408Not Qualified1SINGLE WITH BUILT-IN DIODE2.8W Ta 78W TcENHANCEMENT MODEN-ChannelSWITCHING3.2m Ω @ 50A, 10V2V @ 70μA5080pF @ 15V23A Ta 100A Tc39nC @ 5V4.5V 10V±20V100A23A0.0049Ohm200A550 mJRoHS CompliantLead FreeR-PDSO-F5-7ns5.4 ns32 ns20V-----2.8WDRAIN30V
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