BSC032N03S

Infineon Technologies BSC032N03S

Part Number:
BSC032N03S
Manufacturer:
Infineon Technologies
Ventron No:
2853886-BSC032N03S
Description:
MOSFET N-CH 30V 50A TDSON-8
ECAD Model:
Datasheet:
BSC032N03S

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Infineon Technologies BSC032N03S technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSC032N03S.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    OptiMOS™
  • Published
    2004
  • JESD-609 Code
    e0
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Additional Feature
    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    30V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    NO LEAD
  • Peak Reflow Temperature (Cel)
    235
  • Current Rating
    50A
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    8
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    2.8W Ta 78W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    3.2m Ω @ 50A, 10V
  • Vgs(th) (Max) @ Id
    2V @ 70μA
  • Input Capacitance (Ciss) (Max) @ Vds
    5080pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    23A Ta 100A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    39nC @ 5V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Continuous Drain Current (ID)
    50A
  • Drain Current-Max (Abs) (ID)
    23A
  • Drain-source On Resistance-Max
    0.0049Ohm
  • Pulsed Drain Current-Max (IDM)
    200A
  • Avalanche Energy Rating (Eas)
    550 mJ
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
BSC032N03S Features  Fast switching MOSFET for SMPS Optimized technology for notebook DC/DC converters Qualified according to JEDEC1 for target applications N-channel Logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Superior thermal resistance Avalanche rated  dv /dt rated
BSC032N03S More Descriptions
N-Channel MOSFET 30V 100A Rds(on)=3.2mΩ 78W PG-TDSON-8 LF
MOSFET N-CH 30V 23A/100A TDSON
OEMs, CMs ONLY (NO BROKERS)
Product Comparison
The three parts on the right have similar specifications to BSC032N03S.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Continuous Drain Current (ID)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    RoHS Status
    Lead Free
    JESD-30 Code
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Gate to Source Voltage (Vgs)
    Supplier Device Package
    Max Power Dissipation
    Drain to Source Voltage (Vdss)
    Input Capacitance
    Rds On Max
    Power Dissipation
    Case Connection
    Drain to Source Breakdown Voltage
    View Compare
  • BSC032N03S
    BSC032N03S
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    OptiMOS™
    2004
    e0
    Discontinued
    1 (Unlimited)
    8
    EAR99
    Tin/Lead (Sn/Pb)
    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
    FET General Purpose Power
    30V
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    235
    50A
    NOT SPECIFIED
    8
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    2.8W Ta 78W Tc
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    3.2m Ω @ 50A, 10V
    2V @ 70μA
    5080pF @ 15V
    23A Ta 100A Tc
    39nC @ 5V
    4.5V 10V
    ±20V
    50A
    23A
    0.0049Ohm
    200A
    550 mJ
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BSC022N03S
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    OptiMOS™
    2004
    e0
    Discontinued
    1 (Unlimited)
    5
    EAR99
    Tin/Lead (Sn/Pb)
    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
    FET General Purpose Power
    30V
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    235
    50A
    NOT SPECIFIED
    8
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    2.8W Ta 104W Tc
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    2.2m Ω @ 50A, 10V
    2V @ 100μA
    7490pF @ 15V
    28A Ta 100A Tc
    58nC @ 5V
    4.5V 10V
    ±20V
    50A
    -
    0.0033Ohm
    200A
    -
    Non-RoHS Compliant
    Contains Lead
    R-PDSO-N5
    9.7 ns
    9ns
    7 ns
    42 ns
    20V
    -
    -
    -
    -
    -
    -
    -
    -
  • BSC042N03ST
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    OptiMOS™
    -
    -
    Discontinued
    1 (Unlimited)
    -
    -
    -
    -
    -
    30V
    MOSFET (Metal Oxide)
    -
    -
    -
    50A
    -
    -
    -
    -
    -
    -
    -
    N-Channel
    -
    4.2mOhm @ 50A, 10V
    2V @ 50μA
    3660pF @ 15V
    20A Ta 50A Tc
    28nC @ 5V
    4.5V 10V
    ±20V
    50A
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    -
    -
    5.8ns
    -
    -
    -
    PG-TDSON-8-5
    62.5W
    30V
    3.66nF
    4.2 mΩ
    -
    -
    -
  • BSC032N03SG
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    OptiMOS™
    2004
    e3
    Obsolete
    1 (Unlimited)
    5
    EAR99
    MATTE TIN
    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
    FET General Purpose Power
    30V
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    260
    50A
    40
    8
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    2.8W Ta 78W Tc
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    3.2m Ω @ 50A, 10V
    2V @ 70μA
    5080pF @ 15V
    23A Ta 100A Tc
    39nC @ 5V
    4.5V 10V
    ±20V
    100A
    23A
    0.0049Ohm
    200A
    550 mJ
    RoHS Compliant
    Lead Free
    R-PDSO-F5
    -
    7ns
    5.4 ns
    32 ns
    20V
    -
    -
    -
    -
    -
    2.8W
    DRAIN
    30V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.