BSC059N03ST

Infineon Technologies BSC059N03ST

Part Number:
BSC059N03ST
Manufacturer:
Infineon Technologies
Ventron No:
2853800-BSC059N03ST
Description:
MOSFET N-CH 30V 50A TDSON-8
ECAD Model:
Datasheet:
BSC059N03ST

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Specifications
Infineon Technologies BSC059N03ST technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSC059N03ST.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Supplier Device Package
    PG-TDSON-8-1
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    OptiMOS™
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Voltage - Rated DC
    30V
  • Max Power Dissipation
    48W
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    50A
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    5.5mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id
    2V @ 35μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2670pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    19A Ta 89A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    21nC @ 5V
  • Rise Time
    4.8ns
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Continuous Drain Current (ID)
    50A
  • Input Capacitance
    2.67nF
  • Rds On Max
    5.5 mΩ
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
BSC059N03ST Overview
The maximum input capacitance of this device is 2670pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 50A.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

BSC059N03ST Features
a continuous drain current (ID) of 50A
a 30V drain to source voltage (Vdss)


BSC059N03ST Applications
There are a lot of Infineon Technologies
BSC059N03ST applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
BSC059N03ST More Descriptions
Trans MOSFET N-CH 30V 17.5A 8-Pin TDSON T/R
MOSFET N-CH 30V 19A/89A TDSON
CAP CER 1.8PF 25V C0G/NP0 01005
Product Comparison
The three parts on the right have similar specifications to BSC059N03ST.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Series
    Part Status
    Moisture Sensitivity Level (MSL)
    Voltage - Rated DC
    Max Power Dissipation
    Technology
    Current Rating
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Continuous Drain Current (ID)
    Input Capacitance
    Rds On Max
    RoHS Status
    Lead Free
    Transistor Element Material
    Published
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Transistor Application
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    JESD-30 Code
    Turn On Delay Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Gate to Source Voltage (Vgs)
    Surface Mount
    HTS Code
    Reach Compliance Code
    Case Connection
    DS Breakdown Voltage-Min
    View Compare
  • BSC059N03ST
    BSC059N03ST
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    PG-TDSON-8-1
    -55°C~150°C TJ
    Tape & Reel (TR)
    OptiMOS™
    Discontinued
    1 (Unlimited)
    30V
    48W
    MOSFET (Metal Oxide)
    50A
    N-Channel
    5.5mOhm @ 50A, 10V
    2V @ 35μA
    2670pF @ 15V
    19A Ta 89A Tc
    21nC @ 5V
    4.8ns
    30V
    4.5V 10V
    ±20V
    50A
    2.67nF
    5.5 mΩ
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BSC032N03S
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    OptiMOS™
    Discontinued
    1 (Unlimited)
    30V
    -
    MOSFET (Metal Oxide)
    50A
    N-Channel
    3.2m Ω @ 50A, 10V
    2V @ 70μA
    5080pF @ 15V
    23A Ta 100A Tc
    39nC @ 5V
    -
    -
    4.5V 10V
    ±20V
    50A
    -
    -
    Non-RoHS Compliant
    Contains Lead
    SILICON
    2004
    e0
    8
    EAR99
    Tin/Lead (Sn/Pb)
    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
    FET General Purpose Power
    DUAL
    NO LEAD
    235
    NOT SPECIFIED
    8
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    2.8W Ta 78W Tc
    ENHANCEMENT MODE
    SWITCHING
    23A
    0.0049Ohm
    200A
    550 mJ
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BSC022N03S
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    OptiMOS™
    Discontinued
    1 (Unlimited)
    30V
    -
    MOSFET (Metal Oxide)
    50A
    N-Channel
    2.2m Ω @ 50A, 10V
    2V @ 100μA
    7490pF @ 15V
    28A Ta 100A Tc
    58nC @ 5V
    9ns
    -
    4.5V 10V
    ±20V
    50A
    -
    -
    Non-RoHS Compliant
    Contains Lead
    SILICON
    2004
    e0
    5
    EAR99
    Tin/Lead (Sn/Pb)
    AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
    FET General Purpose Power
    DUAL
    NO LEAD
    235
    NOT SPECIFIED
    8
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    2.8W Ta 104W Tc
    ENHANCEMENT MODE
    SWITCHING
    -
    0.0033Ohm
    200A
    -
    R-PDSO-N5
    9.7 ns
    7 ns
    42 ns
    20V
    -
    -
    -
    -
    -
  • BSC059N03S G
    -
    Surface Mount
    8-PowerTDFN
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    OptiMOS™
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    N-Channel
    5.5m Ω @ 50A, 10V
    2V @ 35μA
    2670pF @ 15V
    17.5A Ta 73A Tc
    21nC @ 5V
    -
    30V
    4.5V 10V
    ±20V
    -
    -
    -
    RoHS Compliant
    -
    SILICON
    2011
    e3
    8
    EAR99
    MATTE TIN
    LOGIC LEVEL COMPATIBLE
    FET General Purpose Power
    DUAL
    FLAT
    260
    40
    8
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    17.5W Ta 48W Tc
    ENHANCEMENT MODE
    SWITCHING
    17.5A
    0.0086Ohm
    200A
    150 mJ
    R-PDSO-F8
    -
    -
    -
    -
    YES
    8541.29.00.95
    compliant
    DRAIN
    30V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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