Infineon Technologies BSC059N03ST
- Part Number:
- BSC059N03ST
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2853800-BSC059N03ST
- Description:
- MOSFET N-CH 30V 50A TDSON-8
- Datasheet:
- BSC059N03ST
Infineon Technologies BSC059N03ST technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSC059N03ST.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerTDFN
- Number of Pins8
- Supplier Device PackagePG-TDSON-8-1
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesOptiMOS™
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Voltage - Rated DC30V
- Max Power Dissipation48W
- TechnologyMOSFET (Metal Oxide)
- Current Rating50A
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs5.5mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id2V @ 35μA
- Input Capacitance (Ciss) (Max) @ Vds2670pF @ 15V
- Current - Continuous Drain (Id) @ 25°C19A Ta 89A Tc
- Gate Charge (Qg) (Max) @ Vgs21nC @ 5V
- Rise Time4.8ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)50A
- Input Capacitance2.67nF
- Rds On Max5.5 mΩ
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
BSC059N03ST Overview
The maximum input capacitance of this device is 2670pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 50A.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
BSC059N03ST Features
a continuous drain current (ID) of 50A
a 30V drain to source voltage (Vdss)
BSC059N03ST Applications
There are a lot of Infineon Technologies
BSC059N03ST applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 2670pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 50A.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
BSC059N03ST Features
a continuous drain current (ID) of 50A
a 30V drain to source voltage (Vdss)
BSC059N03ST Applications
There are a lot of Infineon Technologies
BSC059N03ST applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
BSC059N03ST More Descriptions
Trans MOSFET N-CH 30V 17.5A 8-Pin TDSON T/R
MOSFET N-CH 30V 19A/89A TDSON
CAP CER 1.8PF 25V C0G/NP0 01005
MOSFET N-CH 30V 19A/89A TDSON
CAP CER 1.8PF 25V C0G/NP0 01005
The three parts on the right have similar specifications to BSC059N03ST.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)Voltage - Rated DCMax Power DissipationTechnologyCurrent RatingFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Input CapacitanceRds On MaxRoHS StatusLead FreeTransistor Element MaterialPublishedJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)JESD-30 CodeTurn On Delay TimeFall Time (Typ)Turn-Off Delay TimeGate to Source Voltage (Vgs)Surface MountHTS CodeReach Compliance CodeCase ConnectionDS Breakdown Voltage-MinView Compare
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BSC059N03STSurface MountSurface Mount8-PowerTDFN8PG-TDSON-8-1-55°C~150°C TJTape & Reel (TR)OptiMOS™Discontinued1 (Unlimited)30V48WMOSFET (Metal Oxide)50AN-Channel5.5mOhm @ 50A, 10V2V @ 35μA2670pF @ 15V19A Ta 89A Tc21nC @ 5V4.8ns30V4.5V 10V±20V50A2.67nF5.5 mΩNon-RoHS CompliantContains Lead----------------------------------
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Surface MountSurface Mount8-PowerTDFN8--55°C~150°C TJTape & Reel (TR)OptiMOS™Discontinued1 (Unlimited)30V-MOSFET (Metal Oxide)50AN-Channel3.2m Ω @ 50A, 10V2V @ 70μA5080pF @ 15V23A Ta 100A Tc39nC @ 5V--4.5V 10V±20V50A--Non-RoHS CompliantContains LeadSILICON2004e08EAR99Tin/Lead (Sn/Pb)AVALANCHE RATED, LOGIC LEVEL COMPATIBLEFET General Purpose PowerDUALNO LEAD235NOT SPECIFIED8Not Qualified1SINGLE WITH BUILT-IN DIODE2.8W Ta 78W TcENHANCEMENT MODESWITCHING23A0.0049Ohm200A550 mJ----------
-
Surface MountSurface Mount8-PowerTDFN8--55°C~150°C TJTape & Reel (TR)OptiMOS™Discontinued1 (Unlimited)30V-MOSFET (Metal Oxide)50AN-Channel2.2m Ω @ 50A, 10V2V @ 100μA7490pF @ 15V28A Ta 100A Tc58nC @ 5V9ns-4.5V 10V±20V50A--Non-RoHS CompliantContains LeadSILICON2004e05EAR99Tin/Lead (Sn/Pb)AVALANCHE RATED, LOGIC LEVEL COMPATIBLEFET General Purpose PowerDUALNO LEAD235NOT SPECIFIED8Not Qualified1SINGLE WITH BUILT-IN DIODE2.8W Ta 104W TcENHANCEMENT MODESWITCHING-0.0033Ohm200A-R-PDSO-N59.7 ns7 ns42 ns20V-----
-
-Surface Mount8-PowerTDFN---55°C~150°C TJTape & Reel (TR)OptiMOS™Obsolete1 (Unlimited)--MOSFET (Metal Oxide)-N-Channel5.5m Ω @ 50A, 10V2V @ 35μA2670pF @ 15V17.5A Ta 73A Tc21nC @ 5V-30V4.5V 10V±20V---RoHS Compliant-SILICON2011e38EAR99MATTE TINLOGIC LEVEL COMPATIBLEFET General Purpose PowerDUALFLAT260408Not Qualified1SINGLE WITH BUILT-IN DIODE17.5W Ta 48W TcENHANCEMENT MODESWITCHING17.5A0.0086Ohm200A150 mJR-PDSO-F8----YES8541.29.00.95compliantDRAIN30V
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