Infineon Technologies BSC046N02KS G

Name: BSC046N02KS G
Brand: Infineon Technologies
SKU: 2480242-BSC046N02KS G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSC046N02KS G

Manufacturer:: Infineon Technologies

Ventron No:: 2480242-BSC046N02KS G

Description:: MOSFET N-CH 20V 80A TDSON-8

ECAD Model:

Datasheet:: BSC046N02KS G

Specifications

Infineon Technologies BSC046N02KS G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSC046N02KS G.

Package / Case
PG-TDSON-8
Packaging
Tape & Reel (TR)
RoHS Status
RoHS Compliant

Description

BSC046N02KS G Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet BSC046N02KS G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of BSC046N02KS G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

Product Comparison

The three parts on the right have similar specifications to BSC046N02KS G.

Image

Part Number

Manufacturer

Package / Case

Packaging

RoHS Status

Mount

Mounting Type

Number of Pins

Transistor Element Material

Operating Temperature

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Power Dissipation

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Lead Free

Supplier Device Package

Max Power Dissipation

Drain to Source Voltage (Vdss)

Input Capacitance

Rds On Max

Surface Mount

HTS Code

Reach Compliance Code

DS Breakdown Voltage-Min

View Compare
BSC046N02KS G

Infineon Technologies

PG-TDSON-8

Tape & Reel (TR)

RoHS Compliant

-

-

-

-

-

-

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-

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-

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-

-

-

-

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-

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-

-

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-

-

-

-

-

-

-

-

-

-

-

-

-

-
BSC032N03SG

Infineon Technologies

8-PowerTDFN

Tape & Reel (TR)

RoHS Compliant

Surface Mount

Surface Mount

8

SILICON

-55°C~150°C TJ

OptiMOS™

2004

e3

Obsolete

1 (Unlimited)

5

EAR99

MATTE TIN

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

FET General Purpose Power

30V

MOSFET (Metal Oxide)

DUAL

FLAT

260

50A

40

8

R-PDSO-F5

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

2.8W Ta 78W Tc

ENHANCEMENT MODE

2.8W

DRAIN

N-Channel

SWITCHING

3.2m Ω @ 50A, 10V

2V @ 70μA

5080pF @ 15V

23A Ta 100A Tc

39nC @ 5V

7ns

4.5V 10V

±20V

5.4 ns

32 ns

100A

20V

23A

0.0049Ohm

30V

200A

550 mJ

Lead Free

-

-

-

-

-

-

-

-

-

BSC046N02KS G vs BSC032N03SG
BSC059N03ST

Infineon Technologies

8-PowerTDFN

Tape & Reel (TR)

Non-RoHS Compliant

Surface Mount

Surface Mount

8

-

-55°C~150°C TJ

OptiMOS™

-

-

Discontinued

1 (Unlimited)

-

-

-

-

-

30V

MOSFET (Metal Oxide)

-

-

-

50A

-

-

-

-

-

-

-

-

-

-

N-Channel

-

5.5mOhm @ 50A, 10V

2V @ 35μA

2670pF @ 15V

19A Ta 89A Tc

21nC @ 5V

4.8ns

4.5V 10V

±20V

-

-

50A

-

-

-

-

-

-

Contains Lead

PG-TDSON-8-1

48W

30V

2.67nF

5.5 mΩ

-

-

-

-

BSC046N02KS G vs BSC059N03ST
BSC059N03S G

Infineon Technologies

8-PowerTDFN

Tape & Reel (TR)

RoHS Compliant

-

Surface Mount

-

SILICON

-55°C~150°C TJ

OptiMOS™

2011

e3

Obsolete

1 (Unlimited)

8

EAR99

MATTE TIN

LOGIC LEVEL COMPATIBLE

FET General Purpose Power

-

MOSFET (Metal Oxide)

DUAL

FLAT

260

-

40

8

R-PDSO-F8

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

17.5W Ta 48W Tc

ENHANCEMENT MODE

-

DRAIN

N-Channel

SWITCHING

5.5m Ω @ 50A, 10V

2V @ 35μA

2670pF @ 15V

17.5A Ta 73A Tc

21nC @ 5V

-

4.5V 10V

±20V

-

-

-

-

17.5A

0.0086Ohm

-

200A

150 mJ

-

-

-

30V

-

-

YES

8541.29.00.95

compliant

30V

BSC046N02KS G vs BSC059N03S G