Infineon Technologies BSC037N025S G

Name: BSC037N025S G
Brand: Infineon Technologies
SKU: 2492913-BSC037N025S G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BSC037N025S G

Manufacturer:: Infineon Technologies

Ventron No:: 2492913-BSC037N025S G

Description:: MOSFET N-CH 25V 100A TDSON-8

ECAD Model:

Datasheet:: BSC037N025S G

Specifications

Infineon Technologies BSC037N025S G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BSC037N025S G.

Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
OptiMOS™
Published
2009
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
5
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
8
JESD-30 Code
R-PDSO-F5
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.8W Ta 69W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3.7m Ω @ 50A, 10V
Vgs(th) (Max) @ Id
2V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds
3660pF @ 15V
Current - Continuous Drain (Id) @ 25°C
21A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs
29nC @ 5V
Drain to Source Voltage (Vdss)
25V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
21A
Drain-source On Resistance-Max
0.006Ohm
Pulsed Drain Current-Max (IDM)
200A
DS Breakdown Voltage-Min
25V
Avalanche Energy Rating (Eas)
350 mJ
RoHS Status
RoHS Compliant

Description

BSC037N025S G Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 350 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 3660pF @ 15V.21A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 200A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 25V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 25V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

BSC037N025S G Features
the avalanche energy rating (Eas) is 350 mJ
based on its rated peak drain current 200A.
a 25V drain to source voltage (Vdss)

BSC037N025S G Applications
There are a lot of Infineon Technologies
BSC037N025S G applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

BSC037N025S G More Descriptions

Compliant Surface Mount 5 ns Lead Free 6 ns 3.7 mΩ 100 A 8
MOSFET N-CH 25V 21A/100A TDSON
Power Field-Effect Transistor, 21A I(D), 25V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Product Comparison

The three parts on the right have similar specifications to BSC037N025S G.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Mount

Number of Pins

Voltage - Rated DC

Current Rating

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Lead Free

Supplier Device Package

Max Power Dissipation

Input Capacitance

Rds On Max

View Compare
BSC037N025S G

Infineon Technologies

Surface Mount

8-PowerTDFN

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

OptiMOS™

2009

e3

Obsolete

3 (168 Hours)

5

EAR99

Matte Tin (Sn)

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

FLAT

NOT SPECIFIED

compliant

NOT SPECIFIED

8

R-PDSO-F5

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

2.8W Ta 69W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

3.7m Ω @ 50A, 10V

2V @ 50μA

3660pF @ 15V

21A Ta 100A Tc

29nC @ 5V

25V

4.5V 10V

±20V

21A

0.006Ohm

200A

25V

350 mJ

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BSC024N025S G

Infineon Technologies

Surface Mount

8-PowerTDFN

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

OptiMOS™

2008

e3

Obsolete

1 (Unlimited)

5

EAR99

MATTE TIN

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

FLAT

NOT SPECIFIED

compliant

NOT SPECIFIED

8

R-PDSO-F5

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

2.8W Ta 89W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

2.4m Ω @ 50A, 10V

2V @ 90μA

6530pF @ 15V

27A Ta 100A Tc

52nC @ 5V

25V

4.5V 10V

±20V

27A

0.0037Ohm

200A

25V

800 mJ

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BSC037N025S G vs BSC024N025S G
BSC022N03S

Infineon Technologies

Surface Mount

8-PowerTDFN

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

OptiMOS™

2004

e0

Discontinued

1 (Unlimited)

5

EAR99

Tin/Lead (Sn/Pb)

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

NO LEAD

235

-

NOT SPECIFIED

8

R-PDSO-N5

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

2.8W Ta 104W Tc

ENHANCEMENT MODE

-

N-Channel

SWITCHING

2.2m Ω @ 50A, 10V

2V @ 100μA

7490pF @ 15V

28A Ta 100A Tc

58nC @ 5V

-

4.5V 10V

±20V

-

0.0033Ohm

200A

-

-

Non-RoHS Compliant

Surface Mount

8

30V

50A

9.7 ns

9ns

7 ns

42 ns

50A

20V

Contains Lead

-

-

-

-

BSC037N025S G vs BSC022N03S
BSC042N03ST

Infineon Technologies

Surface Mount

8-PowerTDFN

-

-

-55°C~150°C TJ

Tape & Reel (TR)

OptiMOS™

-

-

Discontinued

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

-

-

-

N-Channel

-

4.2mOhm @ 50A, 10V

2V @ 50μA

3660pF @ 15V

20A Ta 50A Tc

28nC @ 5V

30V

4.5V 10V

±20V

-

-

-

-

-

Non-RoHS Compliant

Surface Mount

8

30V

50A

-

5.8ns

-

-

50A

-

Contains Lead

PG-TDSON-8-5

62.5W

3.66nF

4.2 mΩ

BSC037N025S G vs BSC042N03ST